BTW63

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oauc£i, Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960

BTW63 SERES

FAST TURN-OFF THYRISTORS

Glass passivated, asymmetrical, fast turn-off, forward blocking thyristors (ASCR) in TO-48 envelopes, suitable for operation in fast power inverters. For reverse-blocking operation use with a series diode, for reverse-conducting operation use with an anti-parallel diode.

QUICK REFERENCE DATA

BTW63-600R Repetitive peak off-state voltage

Average on-state current Repetitive peak on-state current Circuit-commutated turn-off time

VDRM

^ma

*- 600

800R 1000R 800 1000

'T(AV)

ITRM

max.

25 250

A A

suffix K suffix N suffix P

tq <

4 6 8

fiS MS IK

MECHANICAL DATA Fig.1 TO-48

Dimensions in mm

14.0

Net mass: 14 g

Diameter of clearance hole: max. 6.5 mm Accessories supplied on request

Supplied with device: 1 nut, 1 lock washer.

Torque on nut: min. 1.7 Nm (17 kg cm) max. 3.5 Nm (35 kg cm) Nut dimensions across the flats: 11.1 mm

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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BTW63 SERIES

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC134) Anode to cathode

Transient off-state voltage Repetitive peak off-state voltage Continuous off-state voltage Transient reverse voltage (tp < 5 /ra)

Average on-state current (averaged over any 20 ms period) up to Tmb = 75 °C

VDSM VDRM VD

ns period]

0.05

BTW63-600R max. 800 max. 600 max. 500

V

RSM

'T(AV)

'T(RMS)

'TRM

'TSM i

²

t

800R 1000

800 650

*v

max.

1000R 1000 1000 700

15

25 22 40 250

370 700

V V V V A A A A

A A's

max.

R.M.S. on-state current

Repetitive peak on-state current; tp = 50 jis; 8 = 0.05 Non-repetitive peak on-state current

TJ = 125 °C prior to surge;

t » 10 ms; half sine-wave ljt for fusing; t = 10ms

• Rate of rise of on-state current after triggering

with IG - 1,25 A; Ij = 80 A dlj/dt Gate to cathode

Average power dissipation (averaged over

any 20 ms period) PG (AV)

Peak power dissipation; t = 10 us PGM Temperatures

Storage temperature

Operating junction temperature THERMAL RESISTANCE

From junction to mounting base Rtn j.m^ From mounting base to heatsink

with heatsink compound Rth mo.n

OPERATING NOTE

The terminals should be neither bent nor twisted; they should be soldered into the circuit so that there is no strain on them.

During soldering the heat conduction to the junction should be kept to a minimum.

1000

1 10

stg T,

-40 to+125 max. 125

0.9 0.2

A/MS

W W

°C

K/W K/W

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BTW63 SERIES

CHARACTERISTICS Anode to cathode On-state voltage

IT = 50 A; TJ = 25 °C Off-stats current

Holding current; TJ = 25 °C Gate to cathode

Voltage that will trigger all devices VD= 1 2 V ; T j = 25°C Current that will trigger all devices

Switching characteristics (see Fig.5) Circuit commutated turn-off time

dVo/dt= 500 V//is (linear to VDRMmax);

RGK = 10 n; VG = 0; TJ = 125 °C;

when switched from l-r = 100 A;tp = 150 /is -d!T/dt=50A//is

suffix K suffix IM suffix P

-dlT/dt= 10 A/fis suffix K

suffix N suffix P

Vdl-r/dt

ID IH

VGT 'GT

reapplied VDM

Fig.2 Circuit-commutated turn-off time definition.

•Measured under pulse conditions to avoid excessive dissipation.

2.6 6.0 400

6 9 12 4 6 8

mA mA

2.0 V 250 mA

MS

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BTW63 SERIES

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T(AV)'A> Tamb(°C)

The right-hand part shows the interrelationship between the power (derived from the left-h and the maximum permissible temperatures.

, 'TfRMS) rm factor =

'T(AV)

57.5

Tmb

80

10X5

125