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I l \ it n a i /s mA I me A 41 d>«. na

o ir 'iv iv - z o r u v v c i i i c t i i d i d i u i

• N channel

• E n h a n c e m en t m ode

w A va la n c h e-ra te d

□ I I"7 OH P U L L I

u “ S '

VPT053B1

Type

^ D S ^ D S (on)

Package 1> Ordering Code

BUZ 21

1 0 0 V 21 A 0 .0 8 5 Q T O -2 2 0 AB C 6 7 0 7 8 -S 1 3 Q 8 -A 2

Parameter Symbol Values Unit

C ontinuous drain current, T c = 2 5 °C

21

A

P u isea drain current, T c = 2 5 °C puls

84

A va la n c h e current, lim ited by 7 jmax yART O -i

^ 1

a, i; Uw nr

/-wcaicai il;i it? e n e iy y , penuuiu imiiieu uy i j (max) Z7

^AR 4 4 mJ

Aunlnnnkn «r*«r/-'iY/ o i r*/~i 1 r»i ileo

/-\ v cum ioiicp cnicnyy, omyit? fjuioc ^ASJ7 in n1 v/u

I D = 21 A, V DD = 2 5 V , i?GS = 2 5 Q

i = S4n mH t = p s °n

" — . - r . ., - j ■--- —

G a te -s o u rc e voltage F GS

± 20

V

P o w e r dissipation, T c = 2 5 °C A ot

75 w

O p eratin g and storage te m p e ra tu re range T ± \j -*• stgT

- 5 5 . . .

+

150 8c

T n e rm a i resistance, chip-case ^th JC <

1.67

K/vV

r\iM i ... : i:j_ . j. . . . rviM a r\ r\ a r\

u iin num iauy category, uiini q-u uq-u i-

C. -

i i h i m ic n co h

ii_o cimicuic ccueyuiy, l^iin ii_o uo- i e c u c m c c

JU/ 1 JU/JU

1) See chapter Package uutiines.

(2)

I V I C N I 3 BUZ 21

at 7] = 25 °C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

Static characteristics

Drain-source breakdown voltage T/ = n \/ / = n OR rr>A

r

Qg

U V j X Q V . t - V X 1 1 1/ 1

y v (BR) DSS 100 - V

f^ptp thrp^hnlH vnltpnp

—n » . ■■ w . . w . w . _ . w

T/ " T 7 T

J

___ A

^GS = ^DS . A) = ' mA

V ^ , .. ' uit> (in) 2.1 3.0 4.0

Zero gate voltage drain current VDS= 100 V, VQS = 0 V

T

= OR ° r

X j £_VX V

Tj = 125 °C

^DSS

T

- n ^ \j. i 10

i n i . \

j

100

pA

uate-source ieakage current K

gs

= 20 V, Kng = 0 V

^GSS

T

x r\

1U

J A r t

1 uu nA

Drain-source on-resistance K

gs

= 1 0 V , /

d

= 1 3 A

^DS (on) — 0.065 0.085 O

Dynamic characteristics

F o rw ard tra n s c o n d u c ta n c e Fns — 2 X /n X ^?ns(on)max t = "1 3 A

&fS n

O X X

I I - n

O

in p u t ca p a cita n ce

v . . = n \ / v__ = OR \ / f = r US w ¥ I r us * >J

1

■ ■*" ■*-m h7

V-/ ISS — 1000 1300 PF

O u tp u t ca p a cita n ce

i / _ n \ i i / _ or- v/ x’ _ x Kill i _

kgs = u v , k ds = £3 V , J = i ivinz

c'-'OSS — 300 530

R e ve rse tra n s fe r ca p a cita n ce Kgs = 0 V, Vos = 25 V, / = 1 M Hz

cv -/ r s s — 150 240

T u rn -o n tim e ton, (fon = rd (on) + tT)

= an v K , „ = m v l = a *?„„ = an o

u u --- i - uo ■ - - I * u ~ *

*1

^ ‘Ui --- --

(o n ) - 25 40 ns

U 50 75

T u rn -o ff tim e roff, (roff = rd (off) + rf)

Knn = 30 V, Kgs = 10 V,

In

= 3 A, Rgs =

50 0.

A (off) 160 210

*H - ouon ■ H A 1 1 U

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I V I C N I 3 BUZ 21

P la n trin a l r khoi«o/'to»«ietine ^r'nnt'rl^

^iwuii ivm v iia ia i/ iv i i^iiu^ ^ov_/i 11

at 7] = 25 °C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

Reverse diode

Continuous reverse drain current

T = JL Q o rl— ° rW

Is -

21 A

P n k p r l rp\/prciP H rp in n i r r p n t /"'k 1“ 0

l c = o

T ~ .£>M 8 4

D io d e f o r w a r d o n - v o lt a g e

4 = 4 2 A , Fq s = 0 V

TZK SD AI .oO A I . ~7 / \ V!

Reverse recovery time

i/„ = s n v r H * I * |- I ~ ‘ r / H;V / H r = 1 n n ~ ~ * */ r-*wa/,,<=

frr 1 5 0

ns

Reverse recovery charge

tz _ on \ / r _ r j j / ^ nn a/ __

Kr = OU V l i p = I Sl u / p / U/ = lU U M /ja b

X. II 0 . 4 8 u 0

(4)

SIEMENS BUZ 21

P h o K o n t a i < i c t i n c o+ 'T ' = O P\ ° P i i n l o c c rvf-htarxA/ i oa o■ ini cavivi iouv/o ui x j — c -s j w

,

ui iicoo vjii1 ^ 1 vvioc ojj^v^ni ^ r l

Total Dower dissipation

n

_

-f/T ’ \

^tot “ X V-'C/

BUZ 21

W

't o t

10

SIL02176

N

\ \

\

L

\ v

\ V

1

\

\

>

L

\ >L

\

\

\

Tv d.

outDut characteristics

T-P f T f \ J D - J \ V DS)

parameter: tp = 80 ps

rn buz 21 (^p=80Ms)

ap

30

n c.

LJ

20 15 10 5

SIL02177

r w , 7<

on\/

;s-^yy

P

m

* 5WJ i /

UV H

7

/ B

/

V 7.5‘v X / A /

* / / j / r >i

X 7V

/ / /

V / / / A /

/ / / /

/ / j

/ / / /

/ /J

* A i

/ V f A A J

f X

ViW /

T

/ / /

//J

/ / v

[VI r

DV

/ / / / / / n m

#

X

/ / 7 / / \j [ > x

\V

'VJ 5.5V

I f f / / / /

! ! ! / / / / J

' X 5V

H u // /

4.5V

-- 4V

9n An Kn Rn inn ton °r it

£-\J ~t\J \J\J U W I \J \t I {- \J \J I V

Safe operating area

T = 7 7 T / A ' D ~ J \ y D S/

parameter: D = O.Oi, Tc = 25 °C

, 2 BUZ 21_______________ (0=0.01, 7c=25°C)

r JD

10z A

1 n1

i \j

SIL02178

1 n0

1 n-1

A ~

m

I t t

Y

o - 4

\ \

I s A,-5.8ms 10/xs

-1 n n . . . .

I uuyLto

1ms

iuums j_yc

>1 n0 •l n1

4

i wr\

2

T

v p

. transfer characteristics

7 = 7 7 T / A

* D ~ J \

y

G S /

parameter: tp = 80 ps, FDS = 25 V 60

BUZ 21

35

10

e;

(/„=80Ms, 7 ^ 2 5 ‘ C, KDS-25V) SIL02179

/ / J' / / / y r / / / / / r / / f / l _ x A r

V 1

(5)

SIEMENS BUZ 21

Tim rlpain.cnnmo i y|s. v n ia iir^ w u iv if --r\

^ D S (on)

~ f (I

d

)

n a r a m p t p r 1

[~ — — ■ --- - 1 ' UCD

P I I 7 91 f r . = ? 5 ; c ) C l i n 9 1 B 7

o.26 —. ~, ji " r—— -— —

0.04

0.°2 --- --- --- --- --- --- --- --- ---

0 .0 0 --- --- --- --- --- --- --- --- ---

0 5 10 15 20 25 30 35 40 A 5

n r

^ D S (on) “ / ( T )

n a r a m a t a r 1 = 1 0 A = 1 0 V (s n rra a rn

[~ ---- - ' *U 1 ~ ' *1 ' UC5 ‘ ~ " > y — p- ■ — /

m i 7 *51 f i / . . n v /_ = 1 % k \ c i m o i R i

0.20

^DS(on) D---- \ --- / **

n i o

U.IO 0.14

0.10 0.08

/~i / V *

u.uo

0.04

0.00

-80 -40 0 40 80 120 C 16 /

> M r . X

X

X y

/ r

98% >1

x

f

X X

X

r *

l x i

vl X

|X

typ

Tvp. forward transconductance n - f i i \

<5fs ~ J V^D /

p aram eter: t p = 8 0 ps

Gate threshold voltage

T/ = f ! T \ r GS (th) ~ J \!

p aram eter: KGS = F DS , I D = 1 m A, (spread)

Sts 20

5 16 14

12

1 n

I V

8 6 4

2

BUZ 21 (/p=80/js, Zj=25'C ) SIL02180

> r X / r / I /1# / / / / /

1 1 1 l__

n ^ in in 9n 91; io w jn w A s

l|'GS(th)

(6)

3 I C I V I C n i 3

R l

17

01

T im nono/iiton/ioc i y v/U|^uvi iuiiv u<p

C = f ( V DS)

n a r a m p t p r 1 = f) V f = 1 M H 7

r— — --- - ' uo - ’ i j ■■•■■■“

10

'

nF

10“n

4 m i 7 *51

lr l\X

T V

10

-1

10

f / „ = DV. f=1 UHV W - • ’ • ■ "■■ —t-')/

rWss n rL/l

/d= / ( T c )

n a r a m a t a r 1 > 1 f) V [”--- --- ■ r UC5 — 1 ~

22 A

1R

fV„ >mv1

V W — ■ - • /

10 15 20 25 30

12

10

8

5

A

2

0

hv\

X \

k

\

\ .

\ \

\ \

\

\ \

\

\

\

\ __I__

\

20 40 60 80 100 120 °C If

Forward characteristics of reverse diode

T — f l \ / \ J F ~ J V S D /

parameter: 7 j, fp = 80 ps, (spread)

Avalanche energy

EaS = f ( J

i)

n o r o m o t o r - T = O 1 A T / = \ /

p u i CAI I I ^ L t i I . i Q --- C I /—1 , K Q Q --- C V

i?GS = 25 Q, I = 340 pH

BUZ 21 ( / D= 21 A, yDD=25V,flGs= 25Q, L=340/jH) SIL02188

110

^AS mJ 90 80 70 60

cnvJU

40

30 20

m

N \

\ \\

i

\ i

\ \

\ k. \ i

\ \ x N

>|

9 0 2.0 fiO RO 1 0 0 1 9 0 1 2 0 c r u

(7)

I V I C N I 3 BUZ 21

Tronciant thoi<m>il imnorlonno i icaii^ivm mvMlKai iMi|^wa(aiivu

■^th JC “ / (7p)

p a r a m e t e r :

D

= rp /

T

-thJC

10-*1_UL

10“6 10“5 10“4 1(T3 10-2 10-1 10° s 1C

Tun nato nhom o 1 y K * lv' w iiuiyw

^ S = /« ? G a ,e )

n a r a m p t p r 1 0 A

[~— ------- ‘U p u i s --- ~ * *

16

12

10

8

6

4

2

0

0 10 20 30 40 50 60 nC 7

DII7 91 ( f ___ =36.0A1 Qll H91 HQ

L /V L . & I \ * UpUIS V I L W & I U lf

f ' A

/

Y J

K j

A

r j

y

/

14

;SiTiG„=C .

2

V

4

f

/

A Y f A /

y K

=0

8

V

//

>

L / r j

/ r

/ /

r

r/

/

/

1 1

/

_____

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