2N6849
Siliconix
P-37010—Rev. A, 06-Jun-94
1
N-Channel Enhancement-Mode Transistor
Product Summary
V
(BR)DSS(V) r
DS(on)( ) I
D(A)
–100 0.30 –6.5
Parametric limits in accordance with MIL-S-19500/564 where applicable.
1
2 3
TO-205AF (TO-39)
Top View D G
S
S
G
D P-Channel MOSFET
Absolute Maximum Ratings (T C = 25 C Unless Otherwise Noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS –100
V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (TJ= 150C) TC = 25C
ID
–6.5 Continuous Drain Current(TJ = 150C)
TC = 100C ID
–3.1
A
Pulsed Drain Current IDM –25 A
Avalanche Current IAR –3.1
Maximum Power Dissipation
TC = 25C
PD
25
W Maximum Power Dissipation
TC = 100C PD
10 W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150
Lead Temperature (1/16” from case for 10 sec.) TL 300 CC
Thermal Resistance Ratings
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient RthJA 175
C/W
Maximum Junction-to-Case RthJC 5.0 C/W
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document
#1489 .
2N6849
2 Siliconix
P-37010—Rev. A, 06-Jun-94
Specifications (T J = 25 C Unless Otherwise Noted)
Limit
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –1000 mA –100
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –2.0 –4.0
V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current IDSS VDS = –80 V, VGS = 0 V –25
mA Zero Gate Voltage Drain Current IDSS
VDS = –80 V, VGS = 0 V, TJ = 125C –250 mA
On-State Drain Currentb ID(on) VDS = –2.1 V, VGS = –10 V –6.5 A
Drain-Source On-State Resistanceb rDS(on)
VGS = –10 V, ID = –4.1 A 0.25 0.30 W Drain-Source On-State Resistanceb rDS(on)
VGS = –10 V, ID = –4.1 A, TJ = 125C 0.40 0.54 W
Forward Transconductanceb gfs VDS = –15 V, ID = –4.1 A 2.5 2.8 7.5 S
Dynamic
Input Capacitance Ciss 625
Output Capacitance Coss VGS = 0 V, VDS = –25 V, f = 1 MHz 280 pF
Reverse Transfer Capacitance Crss 105
Total Gate Chargec Qg 14.7 24 34.8
Gate-Source Chargec Qgs VDS = –50 V, VGS = –10 V, ID = –6.5 A 0.8 3.4 6.8 nC
Gate-Drain Chargec Qgd 2.0 13.5 23.1
Turn-On Delay Timec td(on)
W
9 60
Rise Timec tr VDD = –50 V, RL = 10 W
I 4 1 A V 10 V R 7 5W
50 140
Turn-Off Delay Timec td(off) ns
DD , L
ID^ –4.1 A, VGEN = –10 V, RG = 7.5 W 32 140 ns
Fall Timec tf 38 140
Source-Drain Diode Ratings and Characteristics
Continuous Current IS –6.5
A
Pulsed Current ISM –25
A
Diode Forward Voltageb VSD IF = –6.5 A, VGS = 0 V –0.8 –2.0 V
Reverse Recovery Time trr
IF= –6 5 A di/dt = 100 A/ms 110 250 ns
Reverse Recovery Charge Qrr IF = –6.5 A, di/dt = 100 A/ms
0.4 mC
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
2N6849
Siliconix
P-37010—Rev. A, 06-Jun-94
3
Typical Characteristics (25 C Unless Otherwise Noted)
Output Characteristics Transfer Characteristics
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V) – Drain Current (A)ID
VGS = 10, 9 V
5 V 8 V
7 V
6 V
VGS – Gate-to-Source Voltage (V) – Drain Current (A)ID– Gate-to-Source Voltage (V)– On-Resistance (
Qg – Total Gate Charge (nC) ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF) rDS(on))VGS
– Transconductance (S)gfs
ID – Drain Current (A) 12.5
0 10.0
7.5
5.0
2.5
0
10
8
6
4
2
0
5
4
3
2
1
0
0
15.0 1.0
0.8
0.6
0.4
0.2
0
12.5
10.0
7.5
5.0
2.5
0
2 4 6 8 10 0 2 4 6 8 10
0 5 10 15 20 25 0 5 10 15 20 25
0 10 20 30 40 50 0 10 20 30 40 50
VDS = 50 V
V ID = 6.5 A
4 V
0 2500
2000
1500
1000
500
TC = –55C
25C 125C
TC = –55C
125C 25C
20 V VGS = 10 V
Ciss
Crss
Coss VGS = 0 V
2N6849
4 Siliconix
P-37010—Rev. A, 06-Jun-94
Typical Characteristics (25 C Unless Otherwise Noted)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
(Normalized)– On-Resistance (
TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V)
rDS(on)W) – Source Current (A)IS
TJ = 150C
TJ = 25C
–50 –10 30 70 110 150
200
0 0 100
1 5
10
2 3 4
2.00
1.75
1.50
1.25
1.00
0.75
0
Thermal Ratings
– Drain Current (A)ID
Normalized Effective Transient Thermal Impedance– Drain Current (A)ID
Safe Operating Area Maximum Avalanche and Drain Current
vs. Case Temperature
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec) 2
1
0.1
0.01
10–5 10–4 10–3 10–2 10–1 1 3
TC – Case Temperature (C) VDS – Drain-to-Source Voltage (V) 10
0 8
6
4
2
0
25 50 75 100 125 150 1
0.1
1000 10
10 1
100 100
TC = 25C Single Pulse
100 ms
1 ms
10 ms 100 ms dc 10 ms Limited by
rDS(on)
0.2 0.1 0.05 0.02
Single Pulse Duty Cycle = 0.5
