BSP61

PNP Silicon Darlington Transistors

High collector current

Low collector-emitter saturation voltage

Complementary types: BSP50 ... BSP52 (NPN)

VPS05163

1

2 3 4

Type Marking Pin Configuration Package

BSP60 BSP61 BSP62

BSP 60 BSP 61 BSP 62

1 = B 1 = B 1 = B

2 = C 2 = C 2 = C

3 = E 3 = E 3 = E

4 = C 4 = C 4 = C

SOT223 SOT223 SOT223

Maximum Ratings

Parameter Symbol BSP60 BSP61 BSP62 Unit

Collector-emitter voltage V_CEO 45 60 80 V

Collector-base voltage V_CBO 60 80 90

Emitter-base voltage V_EBO 5 5 5

DC collector current I_C 1 A

Peak collector current I_CM 2

Base current I_B 100 mA

Total power dissipation, T_S = 124 °C P_tot 1.5 W

Junction temperature T_j 150 °C

Storage temperature T_stg -65 ... 150

Thermal Resistance

Junction - soldering point¹⁾ R_thJS
17 K/W

1For calculation of R_thJA please refer to Application Note Thermal Resistance

Parameter Symbol Values Unit min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I_C = 10 mA, I_B = 0 BSP60 BSP61 BSP62

V_(BR)CEO 45 60 80

- - -

- - -

V

Collector-base breakdown voltage

I_C = 100 µA, I_E = 0 BSP60 BSP61 BSP62

V_(BR)CBO 60 80 90

- - -

- - - Emitter-base breakdown voltage

I_E = 100 µA, I_C = 0

V_(BR)EBO 5 - -

Collector-emitter cutoff current V_CE = V_CEOmax, V_BE = 0

I_CES - - 10 µA

Emitter cutoff current V_EB = 4 V, I_C = 0

I_EBO - - 10

DC current gain 1) I_C = 150 mA, V_CE = 10 V I_C = 500 mA, V_CE = 10 V

h_FE

1000 2000

- -

- -

-

Collector-emitter saturation voltage1) I_C = 500 mA, I_B = 0.55 mA

I_C = 1 A, I_B = 1 mA

V_CEsat

- -

- -

1.3 1.8

V

Base-emitter saturation voltage 1) I_C = 500 mA, I_B = 0.5 mA

I_C = 1 A, I_B = 1 mA

V_BEsat

- -

- -

1.9 2.2

AC Characteristics Transition frequency

I_C = 100 mA, V_CE = 5 V, f = 100 MHz

f_T - 200 - MHz

Turn-on time

I_C = 500 mA, I_B1 = I_B2 = 0.5mA

t_(on) - 400 - ns

Turn-off time

I_C = 500 mA, I_B1 = I_B2 = 0.5mA

t_(off) - 1500 -

1) Pulse test: t ≤ 300µs, D = 2%

Switching time test circuit

Switching time waveform

0 V 10%

90%

-V_CC 10%

t_d tr

t_on

10%

toff

t_s t_f

EHN00068

Vin

Vout 90%

90%

1) Pulse test: t _≤ 300_µs, D = 2%

External resistance R_BE = f (T_A)**

V_CB = V_CEmax

** R_BEmax for thermal stability

EHP00666 BSP 60...62

10

0 50 ˚C

R

A

150 5

100

BE

10

7

6

10⁵ 5

T Ω

Total power dissipation P_tot = f(T_S)

0 15 30 45 60 75 90 105 120 °C ¹⁵⁰ T_S

0 150 300 450 600 750 900 1050 1200 1350

mW

1650

Ptot

Permissible pulse load P_totmax / P_totDC = f (t_p)

10

EHP00273 BSP 60...62

-6

100

5

D = 5

10¹ 10² 103

10^-5 10^-4 10^-3 10^-2 s 10⁰ 0

0.005 0.01 0.02 0.05 0.1 0.2 0.5 t_p D=

T t_p

T

tot max

Ptot_DC

P

tp

DC current gain h_FE = f (I_C) V_CE = 10V

EHP00667 BSP 60...62

10

10 mA

FE 5

5

10² 5

10³ 5 10⁴

1 10² 10³ 10⁴

Ι_C h

Collector-emitter saturation voltage I_C = f (V_CEsat), I_B - parameter

EHP00669 BSP 60...62

0 1 V 2

4 mA

10¹ 5 mA

10² Ι_C

5 10³

V_{CE sat}

= 0.5 mA ΙB

Base-emitter saturation voltage I_C = f (V_BEsat), I_B - parameter

EHP00670 BSP 60...62

10

0 1 V

BE sat

3 5

2 10

3

2

10¹ 5

V mA

= 0.5 mA

4 mA Ι_C

Ι_B

Transition frequency f_T = f (I_C) V_CE = 10V, f = 100MHz

EHP00668 BSP 60...62

10

10 mA

f

C

10 MHz

10

T

5

Ι

1 2 3

10

3

2

10¹ 5 5