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BDX33/33A/33B/33C BDX34/34A/34B/34C

HIGH GAIN GENERAL PURPOSE

DESCRIPTION

The BDX33, BDX33A, BDX33B and BDX33C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intended for use n power linear and switching applications. This complementary PNP types are the BDX34, BDX34A, BDX34B and BDX34C respectively.

IN TER N AL S C H EM ATIC D IAG RAM S

ABSO LU TE M AXIM UM RATING S

Symbol P aram eter NPN

*PNP

Value BDX33 Unit

BDX34

BDX33A BDX34A

BDX33B BDX34B

BDX33C BDX34C

Vcbo Collector-base Voltage (Ie =0) 45 60 80 100 V

Vceo Collector-emitter Voltage (Is = 0) 45 60 80 100 V

lc Collector Current 10 A

• CM Collector Peak Current 15 A

Ib Base Current 0.25 A

P tot Total Power Dissipation at T caSe £ 25 °C 70 W

T stg Storage Temperature - 6 5 to 150 °C

T| Junction Temperature 150 °C

* For PNP types voltage and current values are negative.

December 1988 1/5

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TH ER M AL DATA

Rth j-case Thermal Resistance Junction-case Max 1.78 °C/W

ELECTR IC AL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

Sym bol P aram eter T e st C onditions Min. Typ. Max. Unit

Icbo Collector Cutoff Current for BDX33/34 VCB= 4 5 V 0.2 mA

m II O for BDX33A/34A VCB = 60 V 0.2 mA

for BDX33B/34B VCB = 80 V 0.2 mA

for BDX33C/X34C VCB = 100 V Tcase = 1 00 °C

0.2 mA

for BDX33/34 VCB = 45 V 5 mA

for BDX33A/34A VCB = 60 V 5 mA

for BDX33B/34B VCB = 80 V 5 mA

for BDX33C/X34C VCB = 100 V 5 mA

IcEO Collector Cutoff Current for BDX33/34 VCB= 2 2 V 0.5 mA

(Ib- 0 ) for BDX33A/34A V0B = 30 V 0.5 mA

for BDX33B/34B VCB = 40 V 0.5 mA

for BDX33C/X34C V0B = 50 V Tease = 100°C

0.5 mA

for BDX33/34 VCB = 22 V 10 mA

for BDX33A/34A VCB = 30 V 10 mA

for BDX33B/34B VCB = 40 V 10 mA

for BDX33C/X34C V0B = 50 V 10 mA

Iebo Emitter Cutoff Current

( l c - 0 ) VEB = 5 V 5 mA

VcEO(sus)* Collector-emitter Sustaining l0 = 100 mA for BDX33/34 45 V

Voltage (Ib =0) for BDX33A/34A 60 V

for BDX33B/34B 80 V

for BDX33C/X34C 100 V

VcER(sus)* Collector-emitter Sustaining lc = 100 mA for BDX33/34 45 V

Voltage (lB = 0 RBe = 100 Q ) for BDX33A/34A 60 V

for BDX33B/34B 80 V

for BDX33C/34C 100 V

VcEV(sus)* Collector-emitter Sustaining lc = 100 mA for BDX33/34 45 V

Voltage (lB = 0 V BE= -1 .5 V) for BDX33A/34A 60 V

for BDX33B/34B 80 V

for BDX33C/34C 100 V

2/5 r z

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BD X 33/3 3 A /33 B /3 3C -B D X 3 4/34 A /3 4B /3 4C

ELECTR IC AL C H A R A C T E R IS T IC S (continued)

Symbol Param eter T est C onditions Min. Typ. Max. Unit

VcE(sat)* Collector-emitter Saturation Voltage

for BDX33/33A/34/34A

l c = 4 A Ib= 8 mA

for BDX33B/33C/34B/34C

l c = 3 A Ib = 6 mA

2.5

2.5 V

V Vbe' Base-emitter Voltage for BDX33/33A/34/34A

lc = 4 A VCE = 3 V for BDX33B/33C/34B/34C lc = 3 A Vce= 3 V

2.5

2.5 V

V

h F E * DC Current Gain for BDX33/33A/34/34A

lc = 4 A VCe= 3 V for BDX33B/33C/34B/34C lc = 3 A Vce= 3 V

750

750 V F* Parallel-diode Forward

Voltage If= 8 A 4 V

h f e Small Signal Current Gain | c = 1 A V0E - 5 V f = 1 KHz 100

* Pulsed : pulse duration = 300 ms, duty cycle =1 .5 %.

For PNP types voltage and current values are negative.

Safe Operating Areas. Case Temperature Dissipation Derating Curve.

DC Current Gain (NPN types). Collector-emitter Saturation Voltage (NPN types).

T SGS-THOMSON

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DC Transconductance (NPN types). Collector-emitter Saturation Voltage (NPN types).

(V)

Saturated Switching Characteristics (NPN types).

---1

nF E " * ’ VCC=30

2 _

l i

«s

tor

i * » •

1 lC (A)

Collector-base Capacitance (PNP types).

o *

10 vc s (vj

Small Signal Current Gain (NPN types).

4/5 r Z Z

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BD X 33/3 3 A /33 B /3 3C -B D X 3 4/34 A /3 4B /3 4C

Small Signal Current Gain (PNP types).

G-SS17

Collector-emitter Saturation Voltage (PNP types).

DC Transconductance (PNP types).

Collector-emitter Saturation Voltage (PNP types).

DC Current Gain (PNP types).

Saturated Switching Characteristics (PNP types) G-S522

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