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(1)

C ID M O C ® D /u m a r

o i r iv iw o r u v v ^ i I I « l I -Ol -O ivy I D l I T o n

L J \ J t — K - \ J

m N channel

• Enhancement mode

A A . m L n a k a +

w nvaiaiiunc-iaicu

Type VDS Id RqS (on) Package 1> Ordering Code

BUZ 20 100 V 13.5 A 0.2 Q TO-220 AB nfi7n7R-s-i3n?-A?

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current, Tc = 28 °C Id 13.5 A

r™». .i ___i _i_: ... x n r 0

ruisea aram currem, / c = o T

puls

r Jt OH

a.—i---~i--- — ---- i: — :x---i u., nr

Mvcticuiuiie uuiiem, iimiieu uy i j max T

^AR 40 C 10.0

nnArrn/ r\Arirtrlin 1 i f\A i +/-> r \ k » / rT'

nvaiai ioi ic cnciyy, [jciiuuiu iniiiLcru vjy ^ j (max) Z7

^AR 7 Qf .c/ w 11 1 l«J

A\/cj 1 nnoho onorm; cinnlca ni iIcq

f i v uiuiivi \^i i v_^ i y y , w>i i ly i Eas RQ\/»/

Id = 13.5 A, Kdd = 25 V, RGS = 25 Q.

L = 486 ,uH, 7j = 25 °C

Gate-source voltage

vGS

± 20 V

Power dissipation, Tc = 25 °C Ptnt 75

w

Operating and storage temperature range t 1 sta - 55 ... + 150 8C

Thermal resistance, chip-case n

K t h J C

y J A “»

i 1.0/ is n a/ r\/vv

h im u.. : _i: tw h i m an n/in

i_^11m iiu iiiiu iiy uciifc^yuiy, u iin i h-u uh-u r~EL -

1 C r' /-»l i + is\ aa+aaAr\ / HI M 1 C r' GQ “1

i i_v-/ o iiii ia.uo oaicyui y, l-/i i mii_v_/ vju- i ctzi-i cn/cc

i) See chapter Package Uutiines.

(2)

at 7] = 25 °C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

Static characteristics

Drain-source breakdown voltage

T / r Q g = n U \ / V j X Q / = n V . t - V X 1 1 1/ 1O R r r > A

y

v (B R ) D S S 100 - V

f ^ p t p t h r p ^ h n l H v n l t p n p—n » . ■■ w . . w . w . _ . w

T/" T 7 T J __ A

^ G S = ^ D S . A ) = ' m A

V ^ , . .

' uit> (in ) 2.1 3.0 4.0

Zero gate voltage drain current VDS= 100 V, VQS = 0 V

T = o r ° r X j £_VX W

Tj = 125 °C

T

^ D S S

- n ^

\ j . i

10

i ni . \j

100

pA

uate-source ieakage current Kgs= 20 V, K n g = 0 V

T

^ G S S

a r \ 1 U

J A r t

1 u u nA

Drain-source on-resistance Kgs= 1 0 V , /d = 8 . 5 A

^ D S (o n ) 0.125 0.2 O

Dynamic characteristics Forward transconductance

Fns — 2 X /n X ^?ns(on)max • 7n = 8.5 A

&fS O.Uo r\ H-. I>1 “7 - nO

Input capacitance

v.. = n \/ v__ = OR \/ f= r US w ¥ i r us 1■ ■*" ■*-m h7

cv-/ iss — 400 530 PF

Output capacitance

1/ kgs = u v, _ r\ \ / I / _ Of- V/ X'_ v DS = to V , J = i ivinzA Kill 1 _

c'-'OSS — 120 180

Reverse transfer capacitance Kgs = 0 V, Vos = 25 V, / = 1 MHz

cv-'rss — 70 105

Turn-on time fon (fon = rd fon) + tT)

= an v K ,„ = m v n a = an o

■ uu --- 1 ■ uo ■ - ’ > *u ~ - * •» ■ *\a C3 ---

(on) - 10 15 ns

U 45 70

Turn-off time roff, (roff = rd (off) + rf)

Knn = 30 V, Kgs = 10 V, I n = 3.0 A, Rg s = 5 0 0 .

A (off) 55 75

*

H - *-+u/ i n CCo o

Semiconductor Group

(3)

I V I C N I 3 BUZ 20

Plantpinol PhaKoMn^ieti^e ^r>nnt'rl^

l_IUV/U IV/U ■ \yl IUI UV/IV/I lOIIV/O ^ov_/i i i uy

at 7] = 25 °C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

Reverse diode

Continuous reverse drain current

T = O R ' n

X Q £—VX W

- - 1 3 . 5 A

Pulsed reverse drain current

r j- t r \ r - 0 l c = Z . O o

/ ■ „ . . 5 4

T Z A A a n \ !

u i u u y l u i w c t i u u i i - v u u < a y t ;

4 = 27 A, VGS = 0 V

K S D I . H I . u V

Reverse recovery time

i / „ = .on v j_ = H ; V / H r = 1 nn a / , , < = , h w ~ " i ' i- * ~ ■ r / ~ w * */ f-* w

f r r 1 7 0 ns

Reverse recovery charae

t z _ o n \ / r t j j / j* _ a /___

k r = O U V , i p = 1 S , m F / I U = I U U M / j a b

n

x : 11 0 . 3 0 u 0

(4)

P h o K o n t a i < i c t i n c o + 'T ' = O ° P i i n l o o o r \ + h ^ r % i m o £ S o r \ a r > i - f iqH VI mi (aUlVI Ul ± j — £_%_/ V, Ul II^OO Ull ICI VVIO^ OfJCOII icu.

Total power dissipation

n _ -C i t1 \

''tot Uc)

'tot

™ BUZ 20 OU

W

- r r t

/u

10

SIL02B36

>A N V

\

\ .

\

>L

\ A

\ 1

\

\ .

\ vk

\

\V

"

\

1 onI 4 .U ^ C

Tvp5 output characteristics

I — Z*/ 1/ \

=j \vds)

parameter: tp = 80 us

BUZ 20 OU

r A

y D

26

22

o nzu 18 16

1 AI “T

12

a n I U

8 6 4 2

nU

* P —7RW

'tot

(Ad=80MS)

-4

^ = 2 0 V i\

\ / \ /

t

/ /

! / // / / V

1Z4

t P / / / / X

l III//, w arn i m / w x ± . m /ir

W f m

S '

SIL02B38

■5.5V mv

7V 6.5 V

5V

4 . 0 V -

4V|

Safe operating area

Z - V / T / \ 'D “ 7 V Y DSZ

parameter: D = 0.01, Tc = 25 °C

^ 2 buz 20______________ (g=0.Q1, Zc=25=C) JD z a

SIL0283

m 1

in0

i r r 1

W X '

\\<^

7

_

?R

_vX \

t \

£=■

\ N

\N JO

ffl

1

^ i uups zp=»usr 10/U.s

1 ms

1 f l r

u i

tnO mi m2

Tv d. transfer characteristics

Z - V / T / \ J D “ 7 V ' G S Z

parameter: rp = 80 ps, FDS = 25 V

BUZ 20 (/p=80/izs, Zj=25!C, Vds=25V) SIL0283!

24

A

14

m/

/

>

/ / /

,

/ //[ / / / //

// f /A

-/

V 1

Semiconductor Group

(5)

I V I C N I 3 BUZ 20

T i m r l p a i n . c m i m o r\

i y | s . v n i a i i r ^ w u i v i f - -

^ D S (on) ~ f ( Id)

naram ptpr1

[ ~ ---- --- -- --- 1 ' UC5

0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 2 6 A 3 n*

^ D S (on) ~ f(T\)

naram atar1 = R R A = 1 0 V ('snrraarn

[ ~ ---- --- --- - ' * U ~ 1 ~ * * 1 ' UC3 1 ~ ’ I -- --- /

Tvp. forward transconductance

n - f i i \

<5fs ~ J V^D/

parameter: tp = 80 ps

Gate threshold voltage

T / = f ! T \ r GS (th) ~ J \!

parameter: KGS = FDS , ID = i mA, (spread)

9 fS 6.0

C o

3.5

1.0

BUZ 20 (^=80^5, 7j=25'C) SIL0284

£ / // // /

f 1/ 1/ 11 11 1 1__

0 2 4 6 8 10 12 14 16 18 A

i / . . rGS(th)

(6)

i y | s . u c a ^ a v i u a n v u i ?

C = f ( V DS)

naram ptpr1 = 0 V f = 1 M H7

r — — --- -- ' u c 5 - ■ 1 . / ... —

Hrain nnppant

l_»l UNI v u i 1 V II I

/□ = f ( T c)

naram atar1 > 1 0 V

[ ~ — — ■ --- ■ r U O — 1 ~

m i 7 9 n c n n 9 H A t;

L/VL. &U V'M -- ' ~ / VlkVfaWTW

> k NN

\

\ J

\

\

>W

\

\ X\

\ V\

\\

\ 1 l 1

0 --- --- --- --- --- --- --- 1

0 20 40 60 80 100 120 “C If

Forward characteristics of reverse diode j = fl\Z \

1 F ~ J V r SD/

parameter: Y j, tp = 80 ps, (spread)

Avalanche energy EaS = / ( Jj)

n o r c m o t o r 1 / - I Q A 1/ — O \ /

pui CAI I I^L^I . i Q I f~\ , K QQ £_%_/ V

Y?GS = 25 Q, I = 4 86 pH

BUZ 20 (/„=13.5A, /DD=25V,ffGs=25Q.L=486/iH) SIL02847

60

r S

35

10

\

\ V

\>

\

\

>,

\

\ 1i

\\

\\ .

\

\ L N k

>

9 0 2 . 0 f i O RO 1 0 0 1 9 0 1 2 0 cr u

Semiconductor Group

(7)

I V I C N I 3 BUZ 20

i n o r l o n n o i ^ / v v a u ■ i u v

■^th JC ~ f (^ p )

parameter: D = rp / 71

T u n n a t o n h o m o 1 y K * lv' wiiuiyw

^ G S = / « ? G a , e )

naram ptpr1 = ?1 D A

| - --- ---- --- -- puis “ ■ ■ ~ * *

16

12

10

8

6

4

2

0

0 10 20 30 40 50 60 nC 7

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