C ID M O C ® D /u m a r
o i r iv iw o r u v v ^ i I I « l I -Ol -O ivy I D l I T o n
L J \ J t — K - \ J
m N channel
• Enhancement mode
A A . m L n a k a +
w nvaiaiiunc-iaicu
Type VDS Id RqS (on) Package 1> Ordering Code
BUZ 20 100 V 13.5 A 0.2 Q TO-220 AB nfi7n7R-s-i3n?-A?
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current, Tc = 28 °C Id 13.5 A
r™». .i ___i _i_: ... x n r 0
ruisea aram currem, / c = o T
puls
r Jt OH
a.—i---~i--- — ---- i: — :x---i u., nr
Mvcticuiuiie uuiiem, iimiieu uy i j max T
^AR 40 C 10.0
nnArrn/ r\Arirtrlin 1 i f\A i +/-> r \ k » / rT'
nvaiai ioi ic cnciyy, [jciiuuiu iniiiLcru vjy ^ j (max) Z7
^AR 7 Qf .c/ w 11 1 l«J
A\/cj 1 nnoho onorm; cinnlca ni iIcq
f i v uiuiivi \^i i v_^ i y y , w>i i ly i Eas RQ\/»/
Id = 13.5 A, Kdd = 25 V, RGS = 25 Q.
L = 486 ,uH, 7j = 25 °C
Gate-source voltage
vGS
± 20 VPower dissipation, Tc = 25 °C Ptnt 75
w
Operating and storage temperature range t 1 sta - 55 ... + 150 8C
Thermal resistance, chip-case n
K t h J C
y J A “»
i 1.0/ is n a/ r\/vv
h im u.. : _i: tw h i m an n/in
i_^11m iiu iiiiu iiy uciifc^yuiy, u iin i h-u uh-u r~EL -
1 C r' /-»l i A» + is\ aa+aaAr\ / HI M 1 C r' GQ “1
i i_v-/ o iiii ia.uo oaicyui y, l-/i i mii_v_/ vju- i ctzi-i cn/cc
i) See chapter Package Uutiines.
at 7] = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static characteristics
Drain-source breakdown voltage
T / r Q g = n U \ / V j X Q / = n V . t - V X 1 1 1/ 1O R r r > A
y
v (B R ) D S S 100 - V
f ^ p t p t h r p ^ h n l H v n l t p n p—n » . ■■ w . . w . w . _ . w
T/" T 7 T J __ A
^ G S = ^ D S . A ) = ' m A
V ^ , . .
' uit> (in ) 2.1 3.0 4.0
Zero gate voltage drain current VDS= 100 V, VQS = 0 V
T = o r ° r X j £_VX W
Tj = 125 °C
T
^ D S S
- n ^
\ j . i
10
i ni . \j
100
pA
uate-source ieakage current Kgs= 20 V, K n g = 0 V
T
^ G S S —
a r \ 1 U
J A r t
1 u u nA
Drain-source on-resistance Kgs= 1 0 V , /d = 8 . 5 A
^ D S (o n ) — 0.125 0.2 O
Dynamic characteristics Forward transconductance
Fns — 2 X /n X ^?ns(on)max • 7n = 8.5 A
&fS O.Uo r\ H-. I>1 “7 - nO
Input capacitance
v.. = n \/ v__ = OR \/ f= r US w ¥ i r us 1■ ■*" ■*-m h7
cv-/ iss — 400 530 PF
Output capacitance
1/ kgs = u v, _ r\ \ / I / _ Of- V/ X'_ v DS = to V , J = i ivinzA Kill 1 _
c'-'OSS — 120 180
Reverse transfer capacitance Kgs = 0 V, Vos = 25 V, / = 1 MHz
cv-'rss — 70 105
Turn-on time fon (fon = rd fon) + tT)
= an v K ,„ = m v n a = an o
■ uu --- 1 ■ uo ■ - ’ > *u ~ - * •» ■ *\a C3 ---
(on) - 10 15 ns
U 45 70
Turn-off time roff, (roff = rd (off) + rf)
Knn = 30 V, Kgs = 10 V, I n = 3.0 A, Rg s = 5 0 0 .
A (off) 55 75
*
H - *-+u/ i n CCo o
Semiconductor Group
I V I C N I 3 BUZ 20
Plantpinol PhaKoMn^ieti^e ^r>nnt'rl^
l_IUV/U IV/U ■ \yl IUI UV/IV/I lOIIV/O ^ov_/i i i uy
at 7] = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse diode
Continuous reverse drain current
T = O R ' n
X Q £—VX W
- - 1 3 . 5 A
Pulsed reverse drain current
r j- t r \ r - 0 l c = Z . O o
/ ■ „ . . — — 5 4
T Z A A a n \ !
u i u u y l u i w c t i u u i i - v u u < a y t ;
4 = 27 A, VGS = 0 V
K S D I . H I . u V
Reverse recovery time
i / „ = .on v j_ = H ; V / H r = 1 nn a / , , < = , h w ~ " i ' i- * ~ ■ r / ~ w * */ f-* w
f r r — 1 7 0 — ns
Reverse recovery charae
t z _ o n \ / r t j j / j* _ a /___
k r = O U V , i p = 1 S , m F / I U = I U U M / j a b
n „
x : 11 — 0 . 3 0 u 0
P h o K o n t a i < i c t i n c o + 'T ' = O ° P i i n l o o o r \ + h ^ r % i m o £ S o r \ a r > i - f iqH VI mi (aUlVI Ul ± j — £_%_/ V, Ul II^OO Ull ICI VVIO^ OfJCOII icu.
Total power dissipation
n _ -C i t1 \
''tot Uc)
'tot
™ BUZ 20 OU
W
- r r t
/u
10
SIL02B36
>A N V
\
\ .
\
>L
\ A
\ 1
\
\ .
\ vk
\
\V
"
\
1 onI 4 .U ^ C
Tvp5 output characteristics
I — Z*/ 1/ \
=j \vds)
parameter: tp = 80 us
BUZ 20 OU
r A
y D
26
22
o nzu 18 16
1 AI “T
12
a n I U
8 6 4 2
nU
* P —7RW
'tot
(Ad=80MS)
-4
^ = 2 0 V i\
\ / \ /
t
/ /! / // / / V
1Z4
t P / / / / X
l III//, w arn i m / w x ± . m /ir
W f m
S '
SIL02B38
■5.5V mv
7V 6.5 V
5V
4 . 0 V -
4V|
Safe operating area
Z - V / T / \ 'D “ 7 V Y DSZ
parameter: D = 0.01, Tc = 25 °C
^ 2 buz 20______________ (g=0.Q1, Zc=25=C) JD z a
SIL0283
m 1
in0
i r r 1
W X '
\\<^
7
_?R
_vX \
t \
— £=■\ N
\N JO
ffl
1
^ i uups zp=»usr 10/U.s
1 ms
1 f l r
u i
tnO mi m2
Tv d. transfer characteristics
Z - V / T / \ J D “ 7 V ' G S Z
parameter: rp = 80 ps, FDS = 25 V
BUZ 20 (/p=80/izs, Zj=25!C, Vds=25V) SIL0283!
24
A
14
m/
/
>
/ / /
,
/ //[ / / / //
// f /A
-/
V 1
Semiconductor Group
I V I C N I 3 BUZ 20
T i m r l p a i n . c m i m o r\
i y | s . v n i a i i r ^ w u i v i f - -
^ D S (on) ~ f ( Id)
naram ptpr1
[ ~ ---- --- -- --- 1 ' UC5
0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 2 6 A 3 n*
^ D S (on) ~ f(T\)
naram atar1 = R R A = 1 0 V ('snrraarn
[ ~ ---- --- --- - ' * U ~ 1 ~ * * 1 ' UC3 1 ~ ’ I -- --- /
Tvp. forward transconductance
n - f i i \
<5fs ~ J V^D/
parameter: tp = 80 ps
Gate threshold voltage
T / = f ! T \ r GS (th) ~ J \!
parameter: KGS = FDS , ID = i mA, (spread)
9 fS 6.0
C o
3.5
1.0
BUZ 20 (^=80^5, 7j=25'C) SIL0284
£ / // // /
f 1/ 1/ 11 11 1 1__
0 2 4 6 8 10 12 14 16 18 A
i / . . rGS(th)
i y | s . u c a ^ a v i u a n v u i ?
C = f ( V DS)
naram ptpr1 = 0 V f = 1 M H7
r — — --- -- ' u c 5 - ■ 1 . / ■ ... —
Hrain nnppant
l_»l UNI v u i 1 V II I
/□ = f ( T c)
naram atar1 > 1 0 V
[ ~ — — ■ --- ■ r U O — 1 ~
m i 7 9 n c n n 9 H A t;
L/VL. &U V'M -- ' ~ / VlkVfaWTW
> k NN
\
\ J
\
\
>W
\
\ X\
\ V\
\\
\ 1 l 1
0 --- --- --- --- --- --- --- 1
0 20 40 60 80 100 120 “C If
Forward characteristics of reverse diode j = fl\Z \
1 F ~ J V r SD/
parameter: Y j, tp = 80 ps, (spread)
Avalanche energy EaS = / ( Jj)
n o r c m o t o r 1 / - I Q A 1/ — O \ /
pui CAI I I^L^I . i Q I f~\ , K QQ £_%_/ V
Y?GS = 25 Q, I = 4 86 pH
BUZ 20 (/„=13.5A, /DD=25V,ffGs=25Q.L=486/iH) SIL02847
60
r S
35
10
\
\ V
\>
\
\
>,
\
\ 1i
\\
\\ .
\
\ L N k
>
9 0 2 . 0 f i O RO 1 0 0 1 9 0 1 2 0 cr u
Semiconductor Group
I V I C N I 3 BUZ 20
i n o r l o n n o i ^ / v v a u ■ i u v
■^th JC ~ f (^ p )
parameter: D = rp / 71
T u n n a t o n h o m o 1 y K * lv' wiiuiyw
^ G S = / « ? G a , e )
naram ptpr1 = ?1 D A
| - --- ---- --- -- puis “ ■ ■ ~ * *
16
12
10
8
6
4
2
0
0 10 20 30 40 50 60 nC 7