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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
NPN POWER TRANSISTROS 2N1015/2N1016
Conforms to TO-82 Outline
Features:• Gold Alloy Process
• No forward bias secondary breakdown to 100 Volts
• High reverse bias S.O.A. for inductive loads
• Low thermal resistance with copper base
• 150 watt dissipation
• Protection from thermal fatigue with hard solder and molydenum construction
• 25 volt VEBO
• LOW V CE Isat)
• Lifetime Guarantee
Inches Millimeters iymbo
A 08 d 0D 0D,
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q
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Mm....
.500 .045 .140 1.240 .730
.360 .180 .014 .140 .130 .550 .550 .810 .105 .480 .050 ViB-24
Max.
.560 .060 .170 1.280 .770 1.125 .400 .200 .025 .170 .190 .590 .590 .850 .140 .520 .070 UNF-2A
Min.
12.70 1.14 3.56 31.50 18.54
9.14 4.57 .36 3.56 3.30 13.97 13.97 20.57 2.67 12.19 1.27
Max.
14.22 1.52 4.32 32.51 19.56 28.58 10.16
5.08 .64 4.32 4.83 14.99 14.99 21.59 3.56 13.21 1.78
Finish—Nickel Plate.
Approx. Weight—.9 02. (25 g).
1. Complete threads to extend to within 2'/4 threads of seating plane.
2. Contour and angular orientation of terminals is undefined.
3. Pitch.diameter of Y,.-24 UNf-2A (coated) threads (ASA B1.1-1 960).
Applications:
• High Power Switching
• Amplifiers
• Servo Systems
• Regulators
• Modulators
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
7.5 Amperes 30-250 Volts
Maximum Ratings
Voltage
JEDEC
VCEO isos)
2N1015 + 2N1016 + 30 2N1015A + 2N1016A+ 60 2N1015B + 2N1016B+ 100 2N1015C+ 2N1016C* 150 2N1015D* 2N1016D+ 200 2N1015E+ 2N1016E+ 250
Maximum Ratings and Characteristics T c = 25°C unless specified
* Operating and storage temperature
Collector-emitter sustaining voltage
* Emitter-base voltage
* Continous collector current
* Continous base current
* Thermal resistance
* Power dissipation Tc = 45°C Power dissipation Tc = 100°C
VcEO(sus) VEBO
Ic IB Rejc FT
Pr
JEDEC 2IM1015.
2IM1016
— 65 TO 150 30 TO 250
25 7.5 5 .87 150 87
«• ^H
°C Volts Volts Amps Amps
°C/W Watts Watts
• JEDEC Registered Parameters
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Electrical Characteristics T
C=25°C unless otherwise specified
Symbol Minimum Typical Max. Units
2N1016/2N1016
Collector current at VCEX = VCE (from max.-ratings), Tj = 150°C, VBE = -1.5 Vdc ICEX • • 2 *20 mAdc Emitter current at VEB=25 Vdc, lc=0, Tj = 150°C ... IEBQ . . 3 *20 mAdc Switching time, delay plus rise time td+tr • • 3 . . . . jusec
Storage plus fall time • '.. ts +tf . . 7 . . . . ^sec
Second breakdown. Collector Current, VCE = 100V., Tc = 45°C
(one second test), forward bias, Amperes IS/B ... . . 1 5 Adc
^econd breakdown energy, base reverse biased, L = 250 mh., ES/B . . . . Q 5 jou|e RB = 50 ohms, VBE =-6.0 volts, Ic = 2.0 Amperes, Joules
Gain-bandwidth, VCE = 10 volts, Ic = 0.5 Amps, Kilohertz ft 250 • • Khz 2 N1015
DC current gain at VC E=4 Vdc, lc = 2 Adc hpE *10 14
Base voltage, at lc = 2 Adc, IB = 300 mAdc VBE (sat) .. 1.15 . . . . Vdc Beta cut-off frequency fhfe . . 25 . . . . kHz 2N1016
DC current gain at VCE =4 Vdc, Ic = 5 Adc nFE *10 18
Base voltage, at lc = 5 Adc, IB = 750 mAdc VBE (sat) .. 1.25 . .'. . Vdc Beta cut-off frequency fhfa . . 30 . . . . kHz
*JEDC registered parameters.
Typical Characteristics
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Collector Current,ICiAmperes
Typical dc gain versus collector current at Tc = 25°C.
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1.5 Bose Voltage, VBE,Volts
Typical base voltage vs. Collector Current characteristics at To = 25°C.
SAFE OPERATING AREA
10
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0.5
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MAX. IC —
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Maximum Forward Bias Safe Operating Area Single Non-repetitive Pu se
Tc = 45°C These forward Bias Curves
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Transistors except the maximum collector-emitter voltage cannot be exceeded.
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10 50 100 200
Collector Emitter Voltage, VCE. Volts
