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Central Central Central Central Central

Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.

TM

180 CMPT5088

CMPT5089

NPN SILICON TRANSISTORS

SOT-23 CASE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise.

Marking Codes are C1Q, C1R Respectively.

MAXIMUM RATINGS (TA=25oC)

SYMBOL CMPT5088 CMPT5089 UNITS

Collector-Base Voltage VCBO 35 30 V

Collector-Emitter Voltage VCEO 30 25 V

Emitter-Base Voltage VEBO 4.5 V

Collector Current IC 50 mA

Power Dissipation PD 350 mW

Operating and Storage

Junction Temperature TJ,Tstg -65 to +150 oC

Thermal Resistance ΘJA 357 oC/W

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)

CMPT5088 CMPT5089

SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS

ICBO VCB=20V 50 - nA

ICBO VCB=15V - 50 nA

IEBO VEB=3.0V 50 - nA

IEBO VEB=4.5V - 100 nA

BVCBO IC=100µA 35 30 V

BVCEO IC=1.0mA 30 25 V

BVEBO IE=100µA 4.5 4.5 V

VCE(SAT) IC=10mA, IB=1.0mA 0.5 0.5 V

VBE(SAT) IC=10mA, IB=1.0mA 0.8 0.8 V

hFE VCE=5.0V, IC=0.1mA 300 900 400 1200

hFE VCE=5.0V, IC=1.0mA 350 450

hFE VCE=5.0V, IC=10mA 300 400

fT VCE=5.0V, IC=500µA, f=20MHz 50 50 MHz

Cob VCB=5.0V, IE=0, f=1.0MHz 4.0 4.0 pF

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181

R2

CMPT5088 CMPT5089

SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS

Cib VBE=0.5V, IC=0, f=1.0MHz 10 10 pF

hfe VCE=5.0V, IC=1.0mA, f=1.0kHz 350 1400 450 1800 NF VCE=5.0V, IC=100µA, RS=10kΩ

f=10Hz to 15.7kHz 3.0 2.0 dB

All dimensions in inches (mm).

LEAD CODE:

1) BASE 2) EMITTER 3) COLLECTOR

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