BCW68

For general AF applications

High current gain

Low collector-emitter saturation voltage

Complementary types: BCW65, BCW66 (NPN)

1

2 3

VPS05161

Type Marking Pin Configuration Package

BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H

DAs DBs DCs DFs DGs DHs

1 = B 1 = B 1 = B 1 = B 1 = B 1 = B

2 = E 2 = E 2 = E 2 = E 2 = E 2 = E

3 = C 3 = C 3 = C 3 = C 3 = C 3 = C

SOT23 SOT23 SOT23 SOT23 SOT23 SOT23

Maximum Ratings

Parameter Symbol BCW67 BCW68 Unit

Collector-emitter voltage V_CEO 32 45 V

Collector-base voltage V_CBO 45 60

Emitter-base voltage V_EBO 5 5

DC collector current I_C 800 mA

Peak collector current I_CM 1 A

Base current I_B 100 mA

Peak base current I_BM 200

Total power dissipation, T_S = 79 °C P_tot 330 mW

Junction temperature T_j 150 °C

Storage temperature T_stg -65 ... 150

Thermal Resistance

Junction - soldering point¹⁾ R_thJS
215 K/W

1For calculation of R_thJA please refer to Application Note Thermal Resistance

Electrical Characteristics at T_A = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I_C = 10 mA, I_B = 0 BCW67 BCW68

V_(BR)CEO 32 45

- -

- -

V

Collector-base breakdown voltage

I_C = 10 µA, I_B = 0 BCW67 BCW68

V_(BR)CBO 45 60

- -

- - Emitter-base breakdown voltage

I_E = 10 µA, I_C = 0

V_(BR)EBO 5 - -

Collector cutoff current V_CB = 32 V, I_E = 0 V_CB = 45 V, I_E = 0

BCW67 BCW68

I_CBO

- -

- -

20 20

nA

Collector cutoff current

V_CB = 32 V, I_E = 0 , T_A = 150 °C V_CB = 45 V, I_E = 0 , T_A = 150 °C

BCW67 BCW68

I_CBO

- -

- -

20 20

µA

Emitter cutoff current V_EB = 4 V, I_C = 0

I_EBO - - 20 nA

DC current gain 1)

I_C = 100 µA, V_CE = 10 V h_FE-grp.A/F h_FE-grp.B/G h_FE-grp.C/H

h_FE

35 50 80

- - -

- - -

-

DC current gain 1)

I_C = 10 mA, V_CE = 1 V h_FE-grp.A/F h_FE-grp.B/G h_FE-grp.C/H

h_FE

75 120 180

- - -

- - - DC current gain 1)

I_C = 100 mA, V_CE = 1 V h_FE-grp.A/F h_FE-grp.B/G h_FE-grp.C/H

h_FE

100 160 250

160 250 350

250 400 630

1) Pulse test: t ≤ 300µs, D = 2%

Electrical Characteristics at T_A = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics DC current gain 1)

I_C = 500 mA, V_CE = 2 V h_FE-grp.A/F h_FE-grp.B/G h_FE-grp.C/H

h_FE

35 60 100

- - -

- - -

-

Collector-emitter saturation voltage1) I_C = 100 mA, I_B = 10 mA

I_C = 500 mA, I_B = 50 mA

V_CEsat

- -

- -

0.3 0.7

V

Base-emitter saturation voltage 1) I_C = 100 mA, I_B = 10 mA

I_C = 500 mA, I_B = 50 mA

V_BEsat

- -

- -

1.25 2

AC Characteristics Transition frequency

I_C = 50 mA, V_CE = 5 V, f = 20 MHz

f_T - 200 - MHz

Collector-base capacitance V_CB = 10 V, f = 1 MHz

C_cb - 6 - pF

Emitter-base capacitance V_EB = 0.5 V, f = 1 MHz

C_eb - 60 -

Transition frequency f_T = f (I_C) V_CE = 5V

10 10 10 10

BCW 67/68 EHP00398

f

mA MHz

0 5 1 2 3

T

103

10²

101

5 5

5

ΙC

Total power dissipation P_tot = f(T_S)

0 15 30 45 60 75 90 105 120 °C ¹⁵⁰ T_S

0 30 60 90 120 150 180 210 240 270 300

mW

360

Ptot

Permissible pulse load P_totmax / P_totDC = f (t_p)

10

EHP00399 BCW 67/68

-6

100

5

D = 5

10¹ 5

10² 103

10^-5 10^-4 10^-3 10^-2 s 10⁰ 0

0.005 0.01 0.02 0.05 0.1 0.2 0.5 t_p

=

D T

t_p

T

tot max

Ptot_DC

P

tp

Collector cutoff current I_CBO = f (T_A) V_CB = V_CEmax

10 0 50 100 150

BCW 67/68 EHP00400

T_A 5

10 10 nA 10

Ι_CB0

5 5

5 10

10

5

4

3

2

1

0

max

typ

˚C

Base-emitter saturation voltage I_C = f (V_BEsat), h_FE = 10

10 0 3

BCW 67/68 EHP00401

V_{BE sat} 10

mA 10

10

10

3

2

1

0

-1

5

5 5

V

1 2 4

150 25

C -50 Ι

˚C

˚C

˚C

Collector-emitter saturation voltage I_C = f (V_CEsat), h_FE = 10

10 0 600

BCW 67/68 EHP00402

V_{CE sat} 10

mA 10

10

10

3

2

1

0

-1

5

5 5

200 400 mV 800

150 25 -50 ΙC

˚C

˚C

˚C

DC current gain h_FE = f (I_C) V_CE = 1V

10 10 10 10

BCW 67/68 EHP00403

h

-1 0 2 mA 3

FE

103

10²

100

5 5

10¹

101

5 100

25 -50

5 5 5

ΙC

˚C

˚C

˚C