n ____t____
o ir iv iv jo ^ r o w e r i r a n s is io r n ■ I "7 -4 f t A
D U i IU I
Dc aI
I- I Cl ***** I M O * ■ ! *
... .. y
a h I /-»U-» /-» ►-» ►-» /-»I
w I M O l I C l l I I I d
• Enhancement mode
A \/o ln n r» h n n v a i a i iui i^-r o t o r l
i a ic u
•
dv/dt
rated• I n\I__U » » a/ n n - r o c i c t a n p oU l 1 I V \ J I U I U I I W
• 175 °C operating temperature
Type Vds 7d ^D S (o n ) Package Ordering Code
BUZ 101 50 V 29 A 0.06
a
TO-220 AB C67078-S1350-A2Parameter Symbol Value Unit
Continuous drain current,
T
q = 3 i °Cb
29 A1 J l ■ 1 r>
s~l
i ■v-v-v-t~\
/ _ _ OC OC'ru io cu uicuii v^ui 11 cn 11,
i
(j — puis 4HC 1 1 U VA“V Avalanche current limited hv 71™™... ■ ■ ■ ■ ~ J ... . J JI 1 1 CIA ■ r-vi i
J
AD 29 A Avalanche energy, single pulse, /□ = 29 A,L/™ = 95 \/ r UU * , * 'UO = 95 O
T
= 1 iH T= = 95 °Ch" ’> * j wEa s 70 mJ
Gate-source voltage KgS
oCM+i V
r'k — - _i: ±: n r
r\r~
o/-\ru w e r uissipauori,
i c
= ^o ~o Aot ■4 A AIUU 1 A #vv
Operating temperature range 7 j - 5 5 ... + 175 ° c
Storage temperature range Tstn - 5 5 ... + 175 ° c
Thermal resistance chip - case R \ h J C
- 4 P S I . 3
I X A A / r \ / v v
Thermal resistance chip - air R \ b J A < 75 K/W
DIN humidity category, DIN 40 040 E
i i— / - v _ i : --- * --- --- r uM i m a d a ic u ui i m a u u u c u e y u i y , u \ \ \ il u d o - i
r - r - i - < - ^ r - i r - a D O / l / O / O O
Semiconductor Group 08.94
C I C M C M C
J ltlT I LI1J BUZ 101
Eiectricai Characteristics
at 7] = 25 °C S unless otherwise specified.
Parameter Symbol 'value Unit
min t\/nr*- may
Static Characteristics
urain-source breakdown voitage
Vn>B
= n VTr>
= n P.5 mAT = — AO °C.
’
UO w w J *LJ
■ ■ ■' *J ' J ■ w '^(BR)DSS 50 - - V
Gate threshold voitage I = T / r / „ = 1 mA r UC5 r UC5I ««««/»
^GSrth) 2.1 3.0 4 .0 V
Zero gate voltage drain current
tr Ub — / _— cn \ / i/_ _ — n \ / v > K US — ^ v , / j ----t: — /in op
7dss - 1 100 nA
7 am nata vnltana drain currant
T
ncc 0.1 1.0 uAt7 _ irn \ / t7 _ n \ / nr _ orr or»
KDS = 3U V, KGS = u V, Jj = o
7arn nata vnltana drain currant 10 100 11A
Kds
= 50
V, Kqs = 0 V, 7] = 150 °C* uoo r-" 1
T
---- 1 n 1 n n nA\-A
UIV^ OUUI louixuyo LsUII^IIL Kgs = 20 V, KDS = 0 Vn is s l
\J
I\J\J
1 1/ \^ ... __ , D n no/2 n
nc
l/i dii i-^ulii oc ui i-i coioidi icc KGS = 1 0 V ,7d = 21 A
^D S (on) u.uuu 0 . 0 0 14
Eiectricai Characteristics (cont’ci) at 7] = 25 °C S unless otherwise specified.
Parameter Symbol 'value Unit
m i n t\/n m a y
Dynamic Characteristics Forward transconductance
1’ L/O —/no > 9 — * x
Tr\ LJ
* vL/O^UI 1x /?r\o /—\}
IIICIAJ *Tr\ \-J
= 91 A— 1 * *<?fs 7 13.5
-
Sinput capacitance
Ir UC5 = n \/ T/™ = v V J r UC> O R
\/ f=
V>J 1 MWv1 lv" ^Kiss - 680 900 pF
Output capacitance
tr Ub — ^ v > /~ _ — n \ / i/__
v
L)S — _ on w /*- 4 ftfiu-7 V ,j —
i IVI1 iz_Ooss - 240 360 PF
Reverse transfer nananitanne
t/■ _ n \
f xr
_ n rr \ / .r _ hi\ /■ i i —v
GS =v
v, ^DS = ^ v , j = i ivinz:(7roo— 1 oo - 90 135 PF
Turn-on de!av time
KDD = 30 V, Kgs = 10 V, / D = 3 A,
RGS
= 50 Qf
-1 /---\•/u(uii; - 15 23 ns
Pico tirno 1 IIO& III 1 1 w
Kdd = 30 V, Kgs = 10 V,
ID
= 3 A,RGS
= 50 Q-
RR
Qc; n o 1 1 oi u i i i-uii uciciy ui lie
Kdd = 30 V, Kgs = 10 V, / D = 3 A,
RGS = 5 0Q
;4—'4—oi? - ^ no 1 uu H OC 1 OxJ ns
Faii time
Kdd = 30 V,
VGS
= 10 V,ID
= 3 A,RGS
= 50 Q-
~7r\ /u
n reo nsReverse Diode
Continuous reverse drain current r_ - - nn A
Pulsed reverse drain current ^OIVIT o h A - - 116 A
Reverse diode forward on-voitage
= n \ / T r - = RR A r v v , wu # x
Fsd - 1.2 2.0 V
Reverse recovery time
i/_ r |-{ — - \on \ / j\j v , 1r_ — r_ 1- — i ^, u t|- / ur — - i1 ww /“\/ [ nn a /. .0jo
trr - 60 - ns
Reverse re m v e rv nharne . . . . - - j ■ - u
t/ _ o n \ / r _ t 4.* / ~i ^ n n a/.
V f { - OU V, I f - 1S, U^F / UJ = IUU
o rr
X l l - 0,12 - uCSemiconductor Group
C I C M C M C
J ltlT I LI1J BUZ 101
h'acKage uum ne
T A o o n A D i w t t u n D
“ " 1
i n
Q Q*/•*»
a m
, r
I t 7
T
.N f l
T T
1 L _ k S I V I / -
Jl f
t— r i
J T i f )
r
i i ■
11 2
1 ^ -
1 1
JU I I
j L J ' L J L
r t J l Jc --- CO---
I I u./o- 2.54
05 2.54
0 +
A A
1.3
f
I
CO
♦
V.
« I 41
V)4
_ ! _
'inro _1
7
U.3 2.4
GPT0S1SS 1) punch direction, burr max. 0.04
21 din tinnina
4 4 r L.
o) max. 14.3 ay aip Tinning press aurr max. u.uo
Weight approx. 2.0 a Dimensions in mm
Sorts of Packing
Package outlines for tubes travs etc, are contained in our Data Book "Package information".
t— n
unaracierisiics ai / j =
do
~o, umess omerwise specmea.oiai power dissipation P.., = f ( T „ \
* LOL J \ • W
P
m 110W qn
D U L I V I
bU 50 40 30
N
\ \
>
\ \
>k
\\
k XI k\
\ ’s N
N
on in n io n i i n °n
OU IUU l^u IW V/
urain current
f r\ = f (Tr~.\
J \ • W
parameter: Kgs > 10 V
/n 30
A 26 24 22 20
4 O
I O 16 14 12 10 o
a
6 4 2
0
D U L I U I J I L U J U / £.
N |
k
L
k Mk
r v
\ \ J
V\
\ .
\
\%\ V\
\
\1 1
__1—11 U ZU 4U bU HU IUU 1ZU 14U
T,
10USafe operating area
r r/ t r \
iv = j\ v
ds;parameter:
D
= 0.01, 7c = 25 °C m3i w1
. .‘ D A
102
101 5
10°
10° 5 101 V 102
BUZ 101 SIL03873
+ - 11 1
k
A i
■ B ■
It -
\ r .
rji.£ /xs , 9
"H1 ■widfJS-
*\ 1 . > i
-VO' r 11 k f
\ y ''iii i ~k T ur\_UfJ, 5
W'y \ iy IN.i i \ ^1 ■ spllISH
i m
V k 1
kJlrr UU-IS -M-I I — —1- -I
v % I
V dio ms
•p p- k k> !L _ ir—i '
i k Dck 100ms
r r r 1i __ T_
— » - t
Transient thermal impedance
2 t h j c
= f ( t P)
parameter:
D = tp
/T
Semiconductor Group
Cl CI A CMC
J ltlT I LI1J BUZ 101
r— I-,
o n a ra c ie ris u c s ai /j = ~u, umess omerwise specmea.
yp. ouipui cnaracierisiics /l—V = ./ \ ’ UCV
f
d i 17 t n <
DUL IUI
t---- 1---- r*
/*«=100 w \
45 40 35 30
n cZ3
L V9n 15 10 5 Gr.
U
/ I / / / / / T
x r m r r
5T-0.3V1im / s w iw / y s i
j .« r a =
I ' 5 V
f s p f
-4 .5 V -4 V —
I
.u i .u z.u J.U .u y 3.ia w c ,
ryp. arain-source on-resisiance Pr,o,._, = /' { fr~\\
j
vu/parameter: |/qs
0 .20 DUL IUI JILUJOf U
R n c f ^ yi / ^ w n y » i n
— I— I— I— I— I— I— I— I— I— I— I—
l/L-=4. RV RV R RV RV fi RV 7V 7 RV RV_
■us • - --- --- • — ... - •
0.00 1U m ou 4U 3U A
/n 03
Tvp. transfer characteristics
In
= / ( Kqs) parameter:tp =
80 ps,Kd s > 2 X Id X /?DS(on) max
BUZ 101 SIL03877
A 55 50 45
■w
jn
35 30 25 20 15 iniu
5
/ iJr
# / / / /r // // /// /M 1
/ IT / // / ■
Tv d•a ■ . forward transconductance ^fC = U " j J
f(In)
X L-r/parameter:
tp =
80 ps,Kd s > 2 X Id X /?DS(on) max
. . BUZ 101 SIL03878
Jfsa .
>
/J
*- / I/ r fI / / f / 1I II1
t— n
unaracierisiics ai / j =
do
~o, umess omerwise specmea.u r a i n - s o u r c e o n - r e s i s i a n c e
= f ( T \
“ uc^un; j \ ^ j /
u a t e m r e s n o i a v o i i a g e
= f ( T \ ' j \ ^ j /
D U L I W l JIUUiAJUU
parameter:
l
□ = 60 A, |/qs = 10 V, (spread) parameter: |/qs = ^ds. 7d = 1 mA, (spread)5.0
4.U
7 r
0.0
Qfl V
h m•
h - j O
Z To
• » « * r s J
**■ ^
^ ■ w9 « 2 .4 2.0
1.6 1.2 0.8
0 .4
r\ a
U.U_cn_in_on n on in cn an i n n i o n i i n — M M — f M — i . M V i.V t w UU UV IV U ILW l * t U V / IUUion
Tvp. capacitances
/ n /* / t /■ \
= /t> / Ds;
Forward characteristics of reverse diode
t /* / T 7 \
=
j k vsd;parameter: 7], rp = 80 ps, (spread)
t n Z BUZ 101 SIL03882
■ w j j j j j j j j j j j i j j j
T ! 7 /
1 f ■r> 1
V
/ / i/j
/ / J 114
/ y ic-i
r
T._ rICO
n
i.# j — L J
\ j
1 Jf[JT j = 1 7 5 ° C typ
;r.~
/j — L vi v y j u / o yr ta&v\
■ 7j= 175 °C (98% ) / 7 T T
l
W Tr
rI f
n n
n _i r II L M _
Semiconductor Group
C I C M C M C
J ltlT I LI1J BUZ 101
m /-\ r~ n
im araciensiics ai /j = d o ~u, umess omerwise specmea.
Maximum avalanche energy £as = /(? ]) Typ. gate charge
n a r a m e t e r 1 7r-> = . . u OQ A I/’ u1-.u1-. = O R \ /v I
’
ocaj
vv^uaie/parameter: /"□ DU|S = 44 A 16
v
12
10 8 6
4
2
DUL IVI JILUJUU*)
r _/iX X
*
/ I X >
M
i/rDSnnax n v
* X J r *x
/ x 1/
'DS nax —n r w tTV T
a /
X
X V X
Xr
/
i / / r / / /
1
on A n cn on m n io n i A n ° r 1 on
A .\J t \ J U V U V I V V I i.\ J I * t V V i u v
Drain-source breakdown voltage
T 7 / rr<\ i . . t7 /r\r~ n /-\ \
v (BR)DSS u p = o X K(BR)DSS
BUZ 101 SILJ03885
1.18
1 1 cM U
1.14
d d r t
I.IZ 1.10 1.08 i.Q6 1.04
1 no
i . \ J i .
1.00
aa n
U.ZJO
0.96 0.94 0.92
/ X - J X
x
J
xJ X
x
> r .
X r
/ j *
X r
y X j X
