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20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

Silicon NPN Power Transistor BUY71

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• High Switching Speed

• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (M in)

APPLICATIONS

• Designed for use in high voltage CRT scanning applications.

ABSOLUTE MAXIMUM RATINGS(T

a

=25'C)

SYMBOL

VCBO

VCEO

VEBO

Ic

IB

PC

T,

Tstg

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current

Collector Power Dissipation

@TC=25'C

Junction Temperature

Storage Temperature Range

MAX

1600

800

5

2

2

40

150

-65-150

UNIT

V

V

V

A

A

W

"C

°c

I PIN LEASE

r» 3. COLLECT OR (CASE) I TO-3 package

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t

A M

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-RP1

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A 3900 B 25.30 26,6 C 7.«3 8.3 D 0.90 1 1 E 1.40 1.6 JJ 1092

H 5.4S K 1V«. 13.£

L 1675 17.C H 1S.40 19-(

0 4 00 4 4 U 30.00 TO- V 4.^0 4^

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G B

It

7 0 0 0

0 6 a

SL r

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NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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Silicon NPN Power Transistor BUY71

ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified

SYMBOL

VcEO(SUS)

V(BR)EBO

VcE(sat)

VBE(sat)

ICBO

IEBO

tlFE

tf

PARAMETER

Collector-Emitter Sustaining Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Fall Time

CONDITIONS

lc=10mA;lB=0

IE=0.1A;IC=0

lc=1.5A; IB=1.5A

IC=1.5A;IB=1.5A

VCB=1600; IE=0

VEB= 5V; lc= 0

lc=0.5A;VCE=5V

lc=1.2A

MIN

800

5

8

TYP. MAX

10

1.5

1.0

1.0

0.7

UNIT

V

V

V

V

mA

mA

u s

Obraz

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