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CMXSH-3

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DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMXSH-3 type contains three (3) Isolated Schottky Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for applica- tions requiring low forward voltage drop.

MARKING CODE: XH3

MAXIMUM RATINGS (TA=25°C)

SYMBOL UNITS

Peak Repetitive Reverse Voltage VRRM 30 V

Continuous Forward Current IF 100 mA

Peak Repetitive Forward Current IFRM 350 mA

Forward Surge Current, tp=10 ms IFSM 750 mA

Power Dissipation PD 350 mW

Operating and Storage

Junction Temperature TJ,Tstg -65 to +150 °C

Thermal Resistance ΘJA 357 °C/W

ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

IR VR=25V 90 500 nA

IR VR=25V, TA=100°C 25 100 µA

BVR IR=100µA 30 V

VF IF=2.0mA 0.29 0.33 V

VF IF=15mA 0.40 0.45 V

VF IF=100mA 0.74 1.00 V

CT VR=1.0V, f=1.0MHz 7.0 pF

trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns

CMXSH-3 SURFACE MOUNT

SUPERminiTM TRIPLE ISOLATED SILICON SCHOTTKY

DIODES

SOT-26 CASE

Central

Semiconductor Corp.

TM

R2 (14-November 2002)

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LEAD CODE:

1) ANODE 1 2) ANODE 2 3) ANODE 3 4) CATHODE 3 5) CATHODE 2 6) CATHODE 1

Central

Semiconductor Corp.

TM

SOT-26 CASE - MECHANICAL OUTLINE

CMXSH-3 SURFACE MOUNT

SUPERminiTM TRIPLE ISOLATED SILICON SCHOTTKY

DIODES

PIN CONFIGURATION

R2 (14-November 2002) MARKING CODE: XH3

Cytaty

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