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^mi-Conductor <Piodueti,

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

2N5986, 2N5987 2N5988

NPN

2N5989, 2N5991

HIGH POWER PLASTIC

COMPLEMENTARY SILICON POWER TRANSISTORS

... designed for use In general-purpose amplifier and switch ing circuits.

• Collector Base Voltage - VCBO = 60 Vdc - 2N6986. 2N5989

• 80 Vdc - 2N6987 - 100 Vdc - 2N5988, 2N5991

• Collector-Emitter Voltage - VCEO - 40 Vdc - 2N5986, 2N5989

= eO Vdc - 2N5987

= 80 Vdc - 2N5988, 2N5991

• DC Current Gain -

hr-E = 20-120 9 > l c - 6 - 0 Adc

= 7.0 (Mini <s> Ic " 12 Me

• Collector-Emitter Saturation Voltage - ) = °-7 Vdc (Ma*> @ 'C • 6.0 Adc

•MAXIMUM RATINGS Bating Collector-BaM Voltage Collector-Emitter Voltage F miller Basa Voltage Collector Current - Continuous

Peak Bale Current

Total Power Diisipation ffl> TC • 25°C Derate above 25°C

Operating and Storaoe Junction Temperature flarigft

Symfaal

VCB VCEO

VEB ic

>B

FO

TJ, T,,,

2NS9S6 2N5989 60 4O

2N5987 80 EO

2N5988 2N5991

too

80 5.0

12 20 4.0 100 08 -6510 '150

Unit Vdc Vdc Vdc Adc

Adc Wain w/°c

°c

THERMAL CHARACTERISTICS Cherecterirtic Trivrrdal Hnittance, Junction ID COM

Symbol

«JC

Mm 1.25

Unit

°C/W

• Indicate* JEDEC R»ghiered Oiu

FIOUflE 1 -POWER DERATING

1

\( s \

V

\ S

6Q BO 100 l!0 tl

\ l«

TC. CMC riMfIIATum I»C1

12 AMPERE TOWER TRANSISTORS COMPLEMENTARY SILICON

40, 60, 80 VOLTS 100 WATTS

STYlE ?;

flu i PIN 1. EMITTER

—LJL 2. COLLECTOR 3. BASE

NOTES:

1. DIM "D" UNCDNTflOtLEO IN ZON£ "H"

2. DIM "F"OIA THRU

3. HEAT SINK CONTACT AREA (BOTTOM)

< LEAOSV»ITHINOJ05"BADOFTnUE POSITION (Tf) AT MAXIMUM MATERIAL CONDITION.

DIM MIN MAX MILLIMETERS

16. U 131?

3.1?

351

4.70.

131

12.83

T7T

<; ssc T67 -

IMS YP

INCHES

0.635 0.495

ES

0.043 OJM"

no?

MAX

osoT

5.131 OjM}

TdiT

TYT

W

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

(2)

2N5986, 2N5987, 2N5988 PIMP / 2N5989, 2N5991 NPN

•ELECTRICAL CHARACTERISTICS (Tc - 26°C uiK»oth«wlM nowdl

I OuncUrlMe I Symbol | Mix

OFF CHARACTERISTICS Coll»ctor-£fii|t»f Sunilnlng Volt**

(1C -0.2 Adc. IB -01 3NEM6,2NS«m 2N6987 2NS888. 2N5991 Collector Cutoff Cufttnl

(VCE - » Vdc. IB - 0> 2NB988. 2N5969

(VCE - 30 Vde. IB - 01 2N5987.

<VCE-40Vdc, IB -01 2NB388, 2NS991 Collet toe Cutoff Currant

(VCE - 60 Vdc, VBE(offl M «•« Vdc) 3N5986, 2N5989 (VCE-80Vdc, VB6(oI()- I.BVdc) 2N5M7 (VcE * 100 Vdc. VBE(off) - ' B V<fc> 2NS888, 2N6991 (VCE - 40 Vdc. VBEIoff) ' '•"> vdc- TC - >26°C) 2NS9S8, 2N69B9 (VCE • 60 Vdc. VBE(oit) " 1-8 Vdc. TC - taS'O 2N6987

|VCE - 80 Vdc. VBE(oil) - 1.5 Vdo, TC - 136°C) 2N6988, 2N8991 Emitter Cutoff Current

|VBE - CJ) Vdc. Ic-OI

VCEOtwt)

'CEO

ICEX

<EBO

40 60 80

-

-

_

-

2.0 2.0 2.0

200 200 300 2.O 2.0 2.0

1.0

Vdc

mAdc

MAdc

mAdc

mAdc

ON CHARACTERISTICS DC Currtnt Q»ln

He - 1 .6 Adc. VCE • 2.0 Vdc) (IC - «.0 Ads, VCE - 2.0 Vdc) UC - 1 2 Adc, VCE » 2-0 Vdc) Colloctor-Emitttr Stturation Valtiai

(Irj - 6.0 Adc, IB - O.6 Adc) [lC-'2Adc, IB- t.SAdcl BtK-EmiturSMurnlon Voitwt

(lc = 12Adc,lB-1,BAdcl Bnt-Emlmr On Voluai

(IC " 6.0 Adc, VCE * 2-0 Vdc)

»FE

VcE(m)

VBEItM)

VBEIonl

•4O 20 7.O

-

_

-

120

0,6 1.7

2.8

t.4

Vdc

Vdc

Vdc

DYNAMIC CHARACTERISTICS Currenl.Qiln — Bmdwfdth Product

(1C - 0-» Adc, VCE - 10 VdC, ftMt • 1 -0 MHz) Output CapKltinc*

<VCB - 10 Vdc, IE • 0, f • 1 0 MHt) 2N6986 thru 2N5988 2N69B9. 2N6991 Sm»ll«lgn«l Currant Gain

(l« =• 2.0 Adc, VCE • «-0 Vdc. «-1.0 kHz)

«T

Cob

"f.

2.0

-

20

600 300 _

MHz

pf

-

•IndkiMi JEDEC ngglitwM OeM.

FIGURE 2 - SWITCHING TIMES TEST CIRCUIT

vcc

•30V

FIGURE 3 - TURN-ON TIME

ii.iiai«« _

OUTY CYCIE • 10* ~ -<V

ft tat *C VARIED TO OBTAIN DESIRf Q ClWKf NT LEVCIS 01 MOST IE FAST RECOVERY TYPE, r,

MUMOO UStO AIOVIIJ »100 m»

MS06IMOSEO SElONIg -100 mA Far PNP t«« circuit ravern dladt ind volliaa polirltl«i

0.02

O.S U 24 1C. COLLECTOR CURRENT (AMR

Cytaty

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