SKM40GD124

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Features

• MOS input (voltage controlled)

• N channel, homogeneous Silicon structure (NPT- Non punch- through IGBT)

• Low loss high density chips

• Low tail current

• High short circuit capability, self limiting to 6 * Icnom

• Latch-up free

• Fast & soft inverse CAL diodes ⁸⁾

• Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould

• Large clearance (9 mm) and creepage distances (13 mm) Typical Applications

• Switched mode power supplies

• Three phase inverters for AC motor speed control

1)T_case = 25 °C, unless otherwise specified

2)I_F = – I_C, V_R = 600 V, –di_F/dt = 500 A/µs, V_GE = 0 V

3)Use V_GEoff = –5... –15 V

8)CAL = Controlled Axial Lifetime Technology

Case and mech. data → B 6 – 80

Symbol Conditions ¹⁾ Units

V_CES V_CGR I_C I_CM V_GES P_tot T_j, (T_stg) V_isol humidity climate

R_GE = 20 kΩ

T_case = 25/65 °C

T_case = 25/65 °C; t_p = 1 ms

per IGBT, T_case = 25 °C

AC, 1 min.

DIN 40 040 DIN IEC 68 T.1

1200 1200 50 / 40 100 / 80

± 20 220 –40 ... +150 (125)

2500 Class F 40/125/56

V V A A V W

°C V

Inverse Diode I_F = –I_C I_FM = –I_CM I_FSM I²t

T_case = 25/80 °C

T_case = 25/80 °C; t_p = 1 ms t_p = 10 ms; sin.; T_j = 150 °C t_p = 10 ms; T_j = 150 °C

45 / 30 100 / 80

350 600

A A A A²s

Characteristics

Symbol Conditions ¹⁾ min. typ. max. Units

V_(BR)CES V_GE(th) I_CES

I_GES V_CEsat V_CEsat g_fs

V_GE = 0, I_C= 0,8 mA V_GE = V_CE, I_C= 1 mA V_GE = 0 T_j = 25 °C V_CE = V_CES T_j = 125 °C V_GE = 20 V, V_CE = 0 I_C = 25 A V_GE = 15 V;

I_C = 40 A T_j = 25 (125) °C V_CE = 20 V, I_C = 25 A

≥^VCES

4,5 – – – – – 12

– 5,5 0,1 3 – 2,1(2,4) 2,6(3,1)

–

– 6,5

1 – 200 2,45(2,85)

– –

V V mA mA nA V V S CCHC

C_ies C_oes C_res L_CE

per IGBT V_GE = 0 V_CE = 25 V f = 1 MHz

– – – – –

– 1900

250 110 –

300 2100

300 150 60

pF pF pF pF nH t_d(on)

t_r t_d(off) t_f E_on⁵⁾ E_off⁵⁾

V_CC= 600 V

V_GE = +15 V / –15 V³⁾ I_C = 25 A, ind. load R_Gon = R_Goff = 40 Ω

T_j= 125 °C

– – – – – –

60 49 380

37 3,7 2,9

– – – – – –

ns ns ns ns mWs mWs Inverse Diode ⁸⁾

V_F = V_EC V_F = V_EC V_TO r_t I_RRM Q_rr

I_F = 25 A V_GE = 0 V;

I_F = 40 A T_j = 25 (125) °C T_j = 125 °C

T_j = 125 °C

I_F = 25 A; T_j = 125 °C²⁾ I_F = 25 A; T_j = 125 °C²⁾

– – – – – –

2,0(1,8) 2,3(2,1)

1,1 – 22 3,7

2,5 – 1,2

44 – –

V V V mΩ

A µC Thermal Characteristics

R_thjc R_thjc R_thch

per IGBT per diode per module

– – –

0,56 1,0 0,05

°C/W

Low Loss IGBT Modules SKM 40 GD 124 D

GD Sixpack

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SKM 40 GD 124 D

M 0 40G12 4.X LS-4

0,1 1 10 100 1000

1 10 100 1000 10000

V_CE V

I_C A

t_p=12µs

100µs

1ms

10ms

M 0 40G12 4.X LS-6

0 2 4 6 8 10 12

0 200 400 600 800 1000 1200 1400

V_CE V

ICSC/IC

allowed numbers of short circuits: <1000 time between short circuits: >1s

di/dt=300 A/µs 900 A/µs 1500 A/µs

M 0 40G12 4.X LS-5

0 0,5 1 1,5 2 2,5

0 200 400 600 800 1000 1200 1400

V_CE V

I_Cpuls/I_C

M 0 40G12 4.X LS-3

0 1 2 3 4 5 6

0 20 40 60 80 100

RG Ω

E mWs

E_on

E_{of f}

M 0 40G12 4.X LS-1

0 50 100 150 200 250

0 20 40 60 80 100 120 140 160

TC °C

Ptot W

M 0 40G12 4.X LS-2

0 2 4 6 8 10 12

0 10 20 30 40 50 60

I_C A

E mWs

E_on

Eof f

Fig. 3 Turn-on /-off energy = f (RG) Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) Fig. 1 Rated power dissipation Ptot = f (TC) Fig. 2 Turn-on /-off energy = f (IC)

Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit IC = f (VCE) Tj = 125 °C VCE = 600 V VGE = + 15 V RG = 40 Ω

1 pulse TC = 25 °C Tj ≤ 150 °C

T_j≤^{150 °C} VGE = ± 15 V t_sc≤^{10 µs} L < 35 nH IC = 25 A T_j≤^{150 °C}

VGE = ± 15 V RGoff = 40 Ω IC = 25 A

Tj = 125 °C VCE = 600 V VGE = + 15 V IC = 25 A

Not for linear use

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M 0 40G12 4.X LS-9

0 10 20 30 40 50

0 1 2 3 4 5

V_CE V

IC A

17V 15V 13V 11V 9V 7V

M 0 40G12 4.X LS-10

0 10 20 30 40 50

0 1 2 3 4 5

V_CE V

IC A

17V 15V 13V 11V 9V 7V

M 0 40G12 4.X LS-12

0 10 20 30 40 50

0 2 4 6 8 10 12 14

V_GE V

I_C A 0 10 20 30 40 50

0 20 40 60 80 100 120 140 160

T_C °C

I_C A

Pcond(t) = VCEsat(t) · IC(t)

VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) · IC(t)

VCE(TO)(Tj) ≤ 1,3 + 0,0005 (Tj –25) [V]

typ.: rCE(Tj) = 0,032 + 0,00010 (Tj –25) [Ω] max.: rCE(Tj) = 0,046 + 0,00014 (Tj –25) [Ω^] valid for VGE = + 15 [V]; IC≥^{0,3 I}Cn

Fig. 9 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 10 Typ. output characteristic, tp = 80 µs; 125 °C Fig. 8 Rated current vs. temperature IC = f (TC)

+2–1

Fig. 11 Saturation characteristic (IGBT)

Calculation elements and equations Fig. 12 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V VGE≥^15V

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SKM 40 GD 124 D

M 0 40G12 4.X LS-18

0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6

0 10 20 30 40 50

I_F A

Eof fD mJ

60 Ω 35 Ω

80 Ω 25 Ω RG= 20 Ω

M 0 40G12 4.X LS-17

0 10 20 30 40 50

0 V_F 1 2 V 3

IF A

Tj=125°C, typ.

T_j=25°C, typ.

T_j=125°C, max.

T_j=25°C, max.

M 0 40G12 4.X LS-16

10 100 1000

0 20 40 60 80 100

R_G Ω

t ns

t_{dof f}

t_don tr

t_f

M 0 40G12 4.X LS-15

10 100 1000

0 I_C 20 40 A 60

t ns

t_doff

t_don

t_r tf

M 0 40G12 4.X LS-14

0,01 0,1 1 10

0 10 20 30

V_CE V

C nF

C_ies

C_oes

C_res

M 0 40G12 4.X LS-13

0 2 4 6 8 10 12 14 16 18 20

0 50 100 150 200

QGate nC

V_GE V

600V

800V

Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.VCE

VGE = 0 V f = 1 MHz

Fig. 15 Typ. switching times vs. IC Fig. 16 Typ. switching times vs. gate resistor RG

Fig. 17 Typ. CAL diode forward characteristic Fig. 18 Diode turn-off energy dissipation per pulse

Tj = 125 °C VCE = 600 V VGE = ± 15 V IC = 25 A induct. load ICpuls = 25 A

Tj = 125 °C VCE = 600 V VGE = ± 15 V RGon = 40 Ω RGoff = 40 Ω induct. load

VCC = 600 V Tj = 125 °C VGE = ± 15 V

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I:\MARKETIN\FRAMEDAT\datbl\B06-igbt\40gd124.fm

0,001 0,01 0,1

0,00001 0,0001 0,001 0,01 0,1 1

s ZthJC

K/W

D=0,5 0,2 0,1 0,05 0,02 0,01

single pulse

t_p

M 0 40G1 24.XLS-24

0 1 2 3 4 5 6

0 500 1000 1500

di_F/dt A/µs

Q_rr µC

I_F=

25 A

15 A 10 A 5 A 60 Ω 35 Ω 80 Ω

25 Ω R_G= 20 Ω 40 A

M 0 40G1 24.XLS-23

0 10 20 30 40 50

0 500 1000 1500

diF/dt A/µs

IRR A

60 Ω 35 Ω

80 Ω

25 Ω R_G= 20 Ω

M 0 40G1 24.XLS-22

0 10 20 30 40 50

I_F A

I_RR A

60 Ω 35 Ω

80 Ω 25 Ω R_G=

20 Ω 0,0001

0,001 0,01 0,1

0,00001 0,0001 0,001 0,01 0,1 1

t_p s

Z_thJC K/W

D=0,50 0,20 0,10 0,05 0,02 0,01 single pulse

Fig. 19 Transient thermal impedance of IGBT Z_thJC = f (t_p); D = t_p/ t_c = t_p · f

Fig. 20 Transient thermal impedance of

inverse CAL diodes Z_thJC = f (t_p); D = t_p/ t_c = t_p · f

Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG)

Fig. 23 Typ. CAL diode peak reverse recovery current IRR = f (di/dt)

Fig. 24 Typ. CAL diode recovered charge

VCC = 600 V T_j = 125 °C VGE = ± 15 V

V_CC = 600 V Tj = 125 °C V_GE = ± 15 V IF = 25 A V_CC = 600 V

Tj = 125 °C V_GE = ± 15 V

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SKM 40 GD 124 D

SEMITRANS Sixpack Case D 67

UL Recognized File no. E 63 532

SKM 40 GD 124 D

Dimensions in mm

Case outline and circuit diagram

Mechanical Data

Symbol Conditions Values Units

min. typ. max.

M1

a w

to heatsink, SI Units (M5) to heatsink, US Units

4 35

– –

– – – –

5 44 5x9,81

175

Nm lb.in.

m/s² g

This is an electrostatic discharge sensitive device (ESDS).

Please observe the international standard IEC 747-1, Chapter IX.

Two devices are supplied in one SEMIBOX A.

Larger packing units (10 and 20 pieces) are used if suitable SEMIBOX → C – 1.