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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or

a

AD8631/AD8632

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700 World Wide Web Site: http://www.analog.com

1.8 V, 5 MHz Rail-to-Rail Low Power Operational Amplifiers

PIN CONFIGURATIONS 5-Lead SOT-23

(RT Suffix)

1

2

3

5

4 –IN A +IN A

OUT A AD8631 V+

V–

8-Lead SOIC (R Suffix)

OUT A –IN A +IN A V–

V+

OUT B –IN B +IN B

AD8632

1 8

2 7

3 6

4 5

8-Lead ␮SOIC (RM Suffix)

–IN A +IN A V–

OUT B –IN B +IN B 1 V+

4 5

8

AD8632

OUT A

FEATURES

Single Supply Operation: 1.8 V to 6 V Space-Saving SOT-23, ␮SOIC Packaging Wide Bandwidth: 5 MHz @ 5 V, 4 MHz @ 1.8 V Low Offset Voltage: 4 mV Max, 0.8 mV typ Rail-to-Rail Input and Output Swing 2 V/␮s Slew Rate @ 1.8 V

Only 225 ␮A Supply Current @ 1.8 V APPLICATIONS

Portable Communications Portable Phones

Sensor Interface Active Filters PCMCIA Cards ASIC Input Drivers Wearable Computers Battery-Powered Devices New Generation Phones Personal Digital Assistants GENERAL DESCRIPTION

The AD8631 brings precision and bandwidth to the SOT-23-5 package at single supply voltages as low as 1.8 V and low supply current. The small package makes it possible to place the AD8631 next to sensors, reducing external noise pickup.

The AD8631 and AD8632 are rail-to-rail input and output bipolar amplifiers with a gain bandwidth of 4 MHz and typical voltage offset of 0.8 mV from a 1.8 V supply. The low supply current and the low supply voltage makes these parts ideal for battery-powered applications. The 3 V/µs slew rate makes the AD8631/AD8632 a good match for driving ASIC inputs, such as voice codecs.

The AD8631/AD8632 is specified over the extended industrial (–40ⴗC to +125ⴗC) temperature range. The AD8631 single is available in 5-lead SOT-23 surface-mount packages. The dual AD8632 is available in 8-lead SOIC and µSOIC packages.

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AD8631/AD8632–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS 0.8 4.0 mV

–40ⴗC ≤ TA≤ +125ⴗC 6 mV

Input Bias Current IB 250 nA

–40ⴗC ≤ TA≤ +125ⴗC 500 nA

Input Offset Current IOS ±150 nA

–40ⴗC ≤ TA≤ +125ⴗC 550 nA

Input Voltage Range VCM 0 5 V

Common-Mode Rejection Ratio CMRR 0 V ≤ VCM≤ 5 V, 63 70 dB

–40ⴗC ≤ TA≤ +125ⴗC 56 dB

Large Signal Voltage Gain AVO RL = 10 kΩ, 0.5 V < VOUT < 4.5 V 25 V/mV RL = 100 kΩ, 0.5 V < VOUT < 4.5 V 100 400 V/mV

RL = 100 kΩ, –40ⴗC ≤ TA≤ +125ⴗC 100 V/mV

Offset Voltage Drift ∆VOS/∆T 3.5 µV/ⴗC

Bias Current Drift ∆IB/∆T 400 pA/ⴗC

OUTPUT CHARACTERISTICS

Output Voltage Swing High VOH IL = 100 µA

–40ⴗC ≤ TA≤ +125ⴗC 4.965 V

IL = 1 mA 4.7 V

Output Voltage Swing Low VOL IL = 100 µA

–40ⴗC ≤ TA≤ +125ⴗC 35 mV

IL = 1 mA 200 mV

Short Circuit Current ISC Short to Ground, Instantaneous ±10 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.2 V to 6 V, 75 90 dB

–40ⴗC ≤ TA≤ +125ⴗC 72 dB

Supply Current/Amplifier ISY VOUT = 2.5 V 300 450 µA

–40ⴗC ≤ TA≤ +125ⴗC 650 µA

DYNAMIC PERFORMANCE

Slew Rate SR 1 V < VOUT < 4 V, RL = 10 kΩ 3 V/µs

Gain Bandwidth Product GBP 5 MHz

Settling Time TS 0.1% 860 ns

Phase Margin φm 53 Degrees

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p

Voltage Noise Density en f = 1 kHz 23 nV/√Hz

Current Noise Density in f = 1 kHz 1.7 pA/√Hz

Specifications subject to change without notice.

(VS = 5 V, V– = 0 V, VCM = 2.5 V, TA = 25ⴗC unless otherwise noted)

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ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS 0.8 4.0 mV

–40ⴗC ≤ TA≤ +125ⴗC 6 mV

Input Bias Current IB 250 nA

Input Offset Current IOS ±150 nA

Input Voltage Range VCM 0 2.2 V

Common-Mode Rejection Ratio CMRR 0 V ≤ VCM≤ 2.2 V, 54 70 dB

–40ⴗC ≤ TA≤ +125ⴗC 47 dB

Large Signal Voltage Gain AVO RL = 10 kΩ, 0.5 V < VOUT < 1.7 V 25 V/mV

RL = 100 kΩ 50 200 V/mV

OUTPUT CHARACTERISTICS

Output Voltage Swing High VOH IL = 100 µA 2.165 V

IL = 750 µA 1.9 V

Output Voltage Swing Low VOL IL = 100 µA 35 mV

IL = 750 µA 200 mV

POWER SUPPLY

Supply Current/Amplifier ISY VOUT = 1.1 V 250 350 µA

–40ⴗC ≤ TA≤ +125ⴗC 500 µA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kΩ 2.5 V/µs

Gain Bandwidth Product GBP 4.3 MHz

Phase Margin φm 50 Degrees

NOISE PERFORMANCE

Voltage Noise Density en f = 1 kHz 23 nV/√Hz

Current Noise Density in f = 1 kHz 1.7 pA/√Hz

Specifications subject to change without notice.

(VS = 2.2 V, V– = 0 V, VCM = 1.1 V, TA = 25ⴗC unless otherwise noted)

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AD8631/AD8632–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS 0.8 4.0 mV

0ⴗC ≤ TA≤ 125ⴗC 6 mV

Input Bias Current IB 250 nA

Input Offset Current IOS ±150 nA

Input Voltage Range VCM 0 1.8 V

Common-Mode Rejection Ratio CMRR 0 V ≤ VCM≤ 1.8 V,

0ⴗC ≤ TA≤ 125ⴗC 49 65 dB

Large Signal Voltage Gain AVO RL = 10 kΩ, 0.5 V < VOUT < 1.3 V 20 V/mV RL = 100 kΩ, 0.5 V < VOUT < 1.3 V 40 200 V/mV OUTPUT CHARACTERISTICS

Output Voltage Swing High VOH IL = 100 µA 1.765 V

IL = 750 µA 1.5 V

Output Voltage Swing Low VOL IL = 100 µA 35 mV

IL = 750 µA 200 mV

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 1.7 V to 2.2 V, 68 86 dB

0ⴗC ≤ TA≤ 125ⴗC 65 dB

Supply Current/Amplifier ISY VOUT = 0.9 V 225 325 µA

0ⴗC ≤ TA≤ 125ⴗC 450 µA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kΩ 2 V/µs

Gain Bandwidth Product GBP 4 MHz

Phase Margin φm 49 Degrees

NOISE PERFORMANCE

Voltage Noise Density en f = 1 kHz 23 nV/√Hz

Current Noise Density in f = 1 kHz 1.7 pA/√Hz

Specifications subject to change without notice.

(VS = 1.8 V, V– = 0 V, VCM = 0.9 V, TA = 25ⴗC unless otherwise noted)

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ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . 6 V Input Voltage2 . . . GND to VS Differential Input Voltage . . . ±0.6 V Internal Power Dissipation

SOT-23 (RT) . . . See Thermal Resistance Chart SOIC (R) . . . See Thermal Resistance Chart µSOIC (RM) . . . See Thermal Resistance Chart Output Short-Circuit Duration . . . Indefinite Storage Temperature Range

R, RM, and RT Packages . . . –65ⴗC to +150ⴗC Operating Temperature Range

AD8631, AD8632 . . . –40ⴗC to +125ⴗC Junction Temperature Range

R, RM, and RT Packages . . . –65ⴗC to +150ⴗC Lead Temperature Range (Soldering, 60 sec) . . . 300ⴗC

NOTES

1Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating condi- tions for extended periods may affect device reliability.

2For supply voltages less than 6 V the input voltage is limited to the supply voltage.

Package TypeJA1JC Unit

5-Lead SOT-23 (RT) 230 146 ⴗC/W

8-Lead SOIC (R) 158 43 ⴗC/W

8-Lead µSOIC (RM) 210 45 ⴗC/W

NOTE

1θJA is specified for worst-case conditions, i.e., θJA is specified for device soldered in circuit board for SOT-23 and SOIC packages.

INPUT OFFSET VOLTAGE – mV 120

0–4

QUANTITY OF AMPLIFIERS

90

60

30

–3 –2 –1 0 1 2 3 4

VS = 5V VCM = 2.5V TA = 25ⴗC

COUNT = 1,133 OP AMPS

Figure 1. Input Offset Voltage Distribution

SUPPLY VOLTAGE – V 350

200

6

SUPPLY CURRENT A

1 3 4 5

325

300

275

250

225

2 TA = 25ⴗC

Figure 2. Supply Current per Amplifier vs. Supply Voltage CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection.

Although the AD8631/AD8632 features proprietary ESD protection circuitry, permanent dam- age may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

ORDERING GUIDE

Temperature Package Package

Model Range Description Option Brand

AD8631ART1 –40ⴗC to +125ⴗC 5-Lead SOT-23 RT-5 AEA AD8632AR –40ⴗC to +125ⴗC 8-Lead SOIC SO-8

AD8632ARM2 –40ⴗC to +125ⴗC 8-Lead µSOIC RM-8 AGA

NOTES

1Available in 3,000-piece reels only.

2Available in 2,500-piece reels only.

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AD8631/AD8632 – Typical Characteristics

TEMPERATURE – ⴗC 500

200

125

SUPPLY CURRENT A

ⴚ50 25 50 100

450

400

350

300

250

VS = 5V

ⴚ25 0 75

Figure 3. Supply Current per Amplifier vs. Temperature

COMMON-MODE VOLTAGE – V 150

ⴚ150 100

50

0

ⴚ50 ⴚ100

ⴚ3 ⴚ2 3

INPUT BIAS CURRENT nA

ⴚ1 0 1 2

VS = ⴞ2.5V TA = 25ⴗC

Figure 4. Input Bias Current vs. Common-Mode Voltage

SOURCE

LOAD CURRENT – ␮A 140

120

0

10 100 10k

OUTPUT VOLTAGE mV

1k 100

80

60

40

20

TA = 25ⴗC

Figure 5. Output Voltage to Supply Rail vs. Load Current

FREQUENCY – Hz

100k 1M 100M

OPEN-LOOP GAIN dB

ⴚ40 10M 40

30

20

10

0

ⴚ10 ⴚ20 ⴚ30

45

0

ⴚ45 ⴚ90 90

PHASE SHIFT Degrees

VS = 5V TA = 25ⴗC GAIN

PHASE

Figure 6. Open-Loop Gain vs. Frequency

FREQUENCY – Hz

10 1k 100M

CLOSED-LOOP GAIN dB

ⴚ40 1M 40

20

ⴚ20 50

100 10k 100k 10M

VS = ±2.5V TA = 25ⴗC 30

10

0

ⴚ10

ⴚ30

Figure 7. Closed-Loop Gain vs. Frequency

FREQUENCY – Hz

10 1k

CMRR dB

100 1M 20

40

60

80 0

100 10k 100k 10M

VS = ⴞ2.5V TA = 25ⴗC

Figure 8. CMRR vs. Frequency

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FREQUENCY – Hz

10 1k

PSRR dB

1M 20

40

60

80 0

100 10k 100k 10M

120

ⴚPSRR VS = ⴞ2.5V

TA = 25ⴗC

ⴙPSRR

100

Figure 9. PSRR vs. Frequency

VS = 5V VCM = 2.5V RL = 10k TA = 25ⴗC VIN = ⴞ50mV AV = +1

CAPACITANCE – pF 60

50

0

10 100

OVERSHOOT %

30

20

10 40

ⴚOS

+OS

Figure 10. Overshoot vs. Capacitance Load

FREQUENCY – Hz 6

5

0

10k 100k 1M

MAXIMUM OUTPUT SWING V p-p

3

2

1 4

DISTORTION 3% VS = 5V

AV = +1 RL = 10k TA = 25ⴗC CL = 15pF

Figure 11. Output Swing vs. Frequency

FREQUENCY – Hz

10 1k 100M

OUTPUT IMPEDANCE

0 1M 60

40

100 10k 100k 10M

VS = 5V TA = 25ⴗC

10 20 30 50

AV = +10

AV = +1

Figure 12. Output Impedance vs. Frequency

FREQUENCY – Hz 50

0

10 100 10k

VOLTAGE NOISE DENSITY pA/ Hz

1k 40

30

20

10

VS =5V TA = 25ⴗC

Figure 13. Voltage Noise Density vs. Frequency

FREQUENCY – Hz 5

0

10 100 10k

CURRENT NOISE DENSITY pA/ Hz

1k 4

3

2

1

VS = 5V TA = 25ⴗC

Figure 14. Current Noise Density vs. Frequency

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AD8631/AD8632

VOLTAGE 200nV/DIV

TIME – 1s/DIV 0

0

0 0

0

0

0 0

0

TA = 25ⴗC VS = ⴞ2.5V

Figure 15. 0.1 Hz to 10 Hz Noise

TIME – 200␮s/DIV 0

0

0

VOLTAGE 1V/DIV

0

0

0 0

0

VS = ⴞ2.5V AV = 1 VIN = SINE WAVE TA = 25ⴗC

Figure 16. No Phase Reversal

TIME – 250ns/DIV 0

0

0

VOLTAGE 20mV/DIV

0

0

0 0

0

VS = ⴞ2.5V AV = +1 TA = 25ⴗC CL = 33pF RL = 10k

Figure 17. Small Signal Transient Response

TIME – 500ns/DIV 0

0

0

VOLTAGE 500mV/DIV

0

0

0 0

0

VS = ⴞ2.5V AV = +1 TA = 25ⴗC CL = 100pF RL = 10k⍀

Figure 18. Large Signal Transient Response

THEORY OF OPERATION

The AD863x is a rail-to-rail operational amplifier that can operate at supply voltages as low as 1.8 V. This family is fabricated using Analog Devices’ high-speed complementary bipolar process, also called XFCB. The process trench isolates each transistor to mini- mize parasitic capacitance, thereby allowing high-speed perfor- mance. Figure 19 shows a simplified schematic of the AD863x family.

The input stage consists of two parallel complementary differen- tial pair: one NPN pair (Q1 and Q2) and one PNP pair (Q3 and Q4). The voltage drops across R7, R8, R9, and R10 are kept low for rail-to-rail operation. The major gain stage of the op amp is a double-folded cascode consisting of transistors Q5, Q6, Q8, and Q9. The output stage, which also operates rail-to-rail, is driven by Q14. The transistors Q13 and Q10 act as level-shifters to give more headroom during 1.8 V operation.

As the voltage at the base of Q13 increases, Q18 starts to sink current. When the voltage at the base of Q13 decreases I8 flows through D16 and Q15 increasing the VBE of Q17, then Q20 sources current.

The output stage also furnishes gain, which depends on the load resistance, since the output transistors are in common emitter

configuration. The output swing when sinking or sourcing 100 µA is 35 mV maximum from each rail.

The input bias current characteristics depend on the common- mode voltage (see Figure 4). As the input voltage reaches about 1 V below VCC, the PNP pair (Q3 and Q4) turns off.

The 1 kΩ input resistor R1 and R2, together with the diodes D7 and D8, protect the input pairs against avalanche damage.

The AD863x family exhibits no phase reversal as the input signal exceeds the supply by more than 0.6 V. Excessive current can flow through the input pins via the ESD diodes D1-D2 or D3-D4, in the event their ~0.6 V thresholds are exceeded. Such fault currents must be limited to 5 mA or less by the use of external series resistance(s).

LOW VOLTAGE OPERATION Battery Voltage Discharge

The AD8631 operates at supply voltages as low as 1.8 V. This amplifier is ideal for battery-powered applications since it can operate at the end of discharge voltage of most popular batteries.

Table I lists the Nominal and End-of-Discharge Voltages of several typical batteries.

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The rail-to-rail feature of the AD8631 can be observed over the supply voltage range, 1.8 V to 5 V. Traces are shown offset for clarity.

INPUT BIAS CONSIDERATION

The input bias current (IB) is a non-ideal, real-life parameter that affects all op amps. IB can generate a somewhat significant offset voltage. This offset voltage is created by IB when flowing through the negative feedback resistor RF. If IB is 250 nA (worst case), and RF is 100 kΩ, the corresponding generated offset voltage is 25 mV (VOS = IB RF).

Obviously the lower the RF the lower the generated voltage offset.

Using a compensation resistor, RB, as shown in Figure 21, can minimize this effect. With the input bias current minimized we still need to be aware of the input offset current (IOS) which will generate a slight offset error. Figure 21 shows three different configurations to minimize IB-induced offset errors.

NONINVERTING CONFIGURATION

AD8631

RS VI

VOUT RF = RS

UNITY GAIN BUFFER VOUT RF

RI

RB = RIⱍⱍRF

VI

VOUT

RB = RIⱍⱍRF

VI

RF

RI

AD8631

INVERTING CONFIGURATION

AD8631

ⴚIN Q14

VEE VCC

VOUT Q1

Q3

R5 R6

I2 R1

ⴙIN R2 R4 R3

I1

R7 R8

D2 ESD

D7

D8

Q2 Q4

D1 ESD

D3 ESD

D4 ESD

Q5

Q6 Q7

C1

Q8

Q11

Q9

I4 I3

I5 Q13

I7

I6

C3

R10 R9

R11

Q15

Q17

D6

R12

Q18 I8

C2

R14

Q19 Q20

C4 D9

VCC

D16

R13

VEE Q10

Figure 19. Simplified Schematic

Table I. Typical Battery Life Voltage Range Nominal End-of-Voltage Battery Voltage (V) Discharge (V)

Lead-Acid 2 1.8

Lithium 2.6–3.6 1.7–2.4

NiMH 1.2 1

NiCd 1.2 1

Carbon-Zinc 1.5 1.1

RAIL-TO-RAIL INPUT AND OUTPUT

The AD8631 features an extraordinary rail-to-rail input and output with supply voltages as low as 1.8 V. With the amplifier’s supply set to 1.8 V, the input can be set to 1.8 V p-p, allowing the output to swing to both rails without clipping. Figure 20 shows a scope picture of both input and output taken at unity gain, with a frequency of 1 kHz, at VS = 1.8 V and VIN = 1.8 V p-p.

TIME – 200␮s/Div VS = 1.8V

VIN = 1.8V p-p

VIN

VOUT

Figure 20. Rail-to-Rail Input Output

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AD8631/AD8632

DRIVING CAPACITIVE LOADS Capacitive Load vs. Gain

Most amplifiers have difficulty driving capacitance due to degra- dation of phase margin caused by additional phase lag from the capacitive load. Higher capacitance at the output can increase the amount of overshoot and ringing in the amplifier’s step response and could even affect the stability of the device. The value of capacitive load that an amplifier can drive before oscillation varies with gain, supply voltage, input signal, temperature, among oth- ers. Unity gain is the most challenging configuration for driving capacitive load. However, the AD8631 offers reasonably good capacitive driving ability. Figure 22 shows the AD8631’s ability to drive capacitive loads at different gains before instability occurs.

This graph is good for all VSY.

GAIN – V/V 1M

10

10 2

CAPACITIVE LOAD pF

4 6 8

10k

1k

100

9

3 5 7

1

UNSTABLE

STABLE 100k

Figure 22. Capacitive Load vs. Gain In-the-Loop Compensation Technique for Driving Capacitive Loads

When driving capacitance in low gain configuration, the in-the-loop compensation technique is recommended to avoid oscillation as is illustrated in Figure 23.

RF +RG CF = 1+

ACL 1

RF CLRO

[ [

RX =RO RG

RF WHERE RO = OPEN-LOOP OUTPUT RESISTANCE AD8631

VIN

VOUT RX

CL CF

RF RG

Figure 23. In-the-Loop Compensation Technique for Driving Capacitive Loads

Snubber Network Compensation for Driving Capacitive Loads As load capacitance increases, the overshoot and settling time will increase and the unity gain bandwidth of the device will decrease. Figure 24 shows an example of the AD8631 in a non- inverting configuration driving a 10 kΩ resistor and a 600 pF capacitor placed in parallel, with a square wave input set to a frequency of 90 kHz and unity gain.

VOLTAGE 200mV/DIV

TIME – 2␮s/DIV 90kHz INPUT SIGNAL

AV = 1 C = 600pF

Figure 24. Driving Capacitive Loads without Compensation By connecting a series R–C from the output of the device to ground, known as the “snubber” network, this ringing and over- shoot can be significantly reduced. Figure 25 shows the network setup, and Figure 26 shows the improvement of the output response with the “snubber” network added.

AD8631 VIN

VOUT 5V

RX CX

CL

Figure 25. Snubber Network Compensation for Capacitive Loads

VOLTAGE 200mV/DIV

TIME – 2␮s/DIV 90kHz INPUT SIGNAL

AV = 1 C = 600pF

Figure 26. Photo of a Square Wave with the Snubber Network Compensation

The network operates in parallel with the load capacitor, CL, and provides compensation for the added phase lag. The actual values of the network resistor and capacitor have to be empirically determined. Table II shows some values of snubber network for large capacitance load.

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Table II. Snubber Network Values for Large Capacitive Loads

CLOAD Rx Cx

600 pF 300 Ω 1 nF

1 nF 300 Ω 1 nF

10 nF 90 Ω 8 nF

TOTAL HARMONIC DISTORTION + NOISE

The AD863x family offers a low total harmonic distortion, which makes this amplifier ideal for audio applications. Figure 27 shows a graph of THD + N, which is ~0.02% @ 1 kHz, for a 1.8 V supply.

At unity gain in an inverting configuration the value of the Total Harmonic Distortion + Noise stays consistently low over all volt- ages supply ranges.

FREQUENCY – Hz 0.1

0.001

10 20k

THD + N %

0.01 1 10

100 1k 10k

VS = 1.8V

VS = 5V INVERTING AV = 1

Figure 27. THD + N vs. Frequency Graph AD8632 Turn-On Time

The low voltage, low power AD8632 features an extraordinary turn on time. This is about 500 ns for VSY = 5 V, which is impressive considering the low supply current (300 µA typical per amplifier).

Figure 28 shows a scope picture of the AD8632 with both channels configured as followers. Channel A has an input signal of 2.5 V and channel B has the input signal at ground. The top waveform shows the supply voltage and the bottom waveform reflects the response of the amplifier at the output of Channel A.

TIME – 200ns/DIV 0

0

0

VOLTAGE 1V/DIV

0

0 0

0

VS = 5V AV = 1 VIN = 2.5V STEP

0V 0V

Figure 28. AD8632 Turn-On Time

A MICROPOWER REFERENCE VOLTAGE GENERATOR Many single-supply circuits are configured with the circuit biased to one-half of the supply voltage. In these cases, a false-ground reference can be created by using a voltage divider buffered by an amplifier. Figure 28 shows the schematic for such a circuit.

The two 1 MΩ resistors generate the reference voltages while drawing only 0.9 µA of current from a 1.8 V supply. A capacitor connected from the inverting terminal to the output of the op amp provides compensation to allow a bypass capacitor to be connected at the reference output. This bypass capacitor helps establish an ac ground for the reference output.

AD8631

10k 0.022␮F

VREF 0.9V TO 2.5V 1␮F

1␮F 1M

1.8V TO 5V

100 1M

Figure 29. A Micropower Reference Voltage Generator MICROPHONE PREAMPLIFIER

The AD8631 is ideal to use as a microphone preamplifier.

Figure 30 shows this implementation.

AD8631 VOUT

R3 220k

1.8V

VREF = 0.9V R2 22k C1 0.1␮F 1.8V

R1 2.2k

ELECTRET

MIC AV = R3

R2 VIN

Figure 30. A Microphone Preamplifier

R1 is used to bias an electret microphone and C1 blocks dc voltage from the amplifier. The magnitude of the gain of the amplifier is approximately R3/R2 when R2 ≥ 10  R1. VREF should be equal to 1/2  1.8 V for maximum voltage swing.

Direct Access Arrangement for Telephone Line Interface Figure 31 illustrates a 1.8 V transmit/receive telephone line interface for 600 Ω transmission systems. It allows full duplex transmission of signals on a transformer-coupled 600 Ω line in a differential manner.

Amplifier A1 provides gain that can be adjusted to meet the modem output drive requirements. Both A1 and A2 are configured to apply the largest possible signal on a single supply to the transformer.

Amplifier A3 is configured as a difference amplifier for two reasons:

(1) It prevents the transmit signal from interfering with the receive signal and (2) it extracts the receive signal from the transmission line for amplification by A4. A4’s gain can be adjusted in the same manner as A1’s to meet the modem’s input signal requirements.

Standard resistor values permit the use of SIP (Single In-line Package) format resistor arrays. Couple this with the AD8631/

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–12–

PRINTED IN U.S.A.

AD8631/AD8632

C3810–2.5–4/00 (rev. 0)

AD8632’s 5-lead SOT-23, 8-lead µSOIC, and 8-lead SOIC footprint and this circuit offers a compact solution.

6.2V 6.2V

TRANSMIT TxA

RECEIVE RxA C1

0.1␮F R1 10k R2 9.09k 2k P1 Tx GAIN ADJUST

A1

A2

A3

A4 A1, A2 = 1/2 AD8632

A3, A4 = 1/2 AD8632 R3 360⍀

1:1

T1 TO TELEPHONE

LINE

1 2 3

7 6 5

2 3

1

6 5

7 10␮F

R7 10k R8 10k R5

10k

R6 10k

R9 10k

R14 14.3k R10

10k

R11 10k

R12 10k

R13 10k

C2 0.1␮F P2 Rx GAIN ADJUST

2k⍀

ZO 600

+1.8V DC

MIDCOM 671-8005

Figure 31. A Single-Supply Direct Access Arrangement for Modems

OUTLINE DIMENSIONS Dimensions shown in inches and (mm).

8-Lead Narrow Body SOIC (SO-8)

0.1968 (5.00) 0.1890 (4.80)

8 5

4 1

0.2440 (6.20) 0.2284 (5.80)

PIN 1 0.1574 (4.00) 0.1497 (3.80)

0.0688 (1.75) 0.0532 (1.35)

SEATING PLANE 0.0098 (0.25) 0.0040 (0.10)

0.0192 (0.49) 0.0138 (0.35) 0.0500

(1.27) BSC

0.0098 (0.25) 0.0075 (0.19)

0.0500 (1.27) 0.0160 (0.41) 8

0

0.0196 (0.50) 0.0099 (0.25)ⴛ 45ⴗ

5-Lead SOT-23 (RT-5)

0.1181 (3.00) 0.1102 (2.80)

PIN 1 0.0669 (1.70) 0.0590 (1.50)

0.1181 (3.00) 0.1024 (2.60)

1 3

4 5

0.0748 (1.90) BSC

0.0374 (0.95) BSC 2

0.0079 (0.20) 0.0031 (0.08)

0.0217 (0.55) 0.0138 (0.35) 10

0 0.0197 (0.50)

0.0138 (0.35) 0.0059 (0.15)

0.0019 (0.05) 0.0512 (1.30) 0.0354 (0.90)

SEATING PLANE 0.0571 (1.45) 0.0374 (0.95)

8-Lead ␮SOIC (RM-8)

8 5

4 1 0.122 (3.10) 0.114 (2.90)

0.199 (5.05) 0.187 (4.75)

PIN 1

0.0256 (0.65) BSC 0.122 (3.10)

0.114 (2.90)

SEATING PLANE 0.006 (0.15) 0.002 (0.05)

0.018 (0.46) 0.008 (0.20)

0.043 (1.09) 0.037 (0.94) 0.120 (3.05)

0.112 (2.84)

0.011 (0.28) 0.003 (0.08)

0.028 (0.71) 0.016 (0.41) 33

27ⴗ 0.120 (3.05) 0.112 (2.84)

SPICE Model

The SPICE model for the AD8631 amplifier is available and can be downloaded from the Analog Devices’ web site at http://www.analog.com. The macro-model accurately simulates a number of AD8631 parameters, including offset voltage, input common-mode range, and rail-to-rail output swing. The output voltage versus output current characteristics of the macro-model is identical to the actual AD8631 performance, which is a critical feature with a rail-to-rail amplifier model. The model also accurately simulates many ac effects, such as gain-bandwidth product, phase margin, input voltage noise, CMRR and PSRR versus frequency, and transient response. Its high degree of model accuracy makes the AD8631 macro-model one of the most reliable and true-to-life models available for any amplifier.

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