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BUW39 SGS THOMSON

NPN HIGH CURRENT SWITCHING POWER TRANSISTORS

■ HIGH CURRENT CAPABILITY

■ VERY LOW SATURATION VOLTAGE AT lc = 20 A

■ FAST TURN-OFF AND TURN-ON

■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS

■ SWITCHING REGULATORS

■ MOTOR CONTROLS

DESCRIPTIO N

High current, high speed transistors suited for low voltage applications.

ABSOLUTE MAXIMUM RATINGS

Symbol Param eter Value

BUW38 BUW39 Unit

Vcbo Collector-base Voltage (Ie =0) 120 160 V

Vceo Collector-emitter Voltage (lB = 0) 60 80 V

Vebo Emitter-base Voltage (lc = 0) 7 7 V

lc Collector Current 30 30 A

ICM Collector Peak Current (tp < 5ms) 45 40 A

Ib Base Current 8 6 A

Ibm Base Peak Current (tp < 5ms) 20 15 A

P tot Total Dissipation at Tc < 25°C 150 W

T stg Storage Temperature - 65 to 200 °C

T, Max. Operating Junction Temperature 200 °C

IN T E R N A L S C H EM ATIC D IAG RAM (

r

NPN .

L

December 1988 1/9

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TH ER M AL DATA

Rthj-case Thermal Resistance Junction-case max 1.17 °C/W

ELECTR IC AL CH ARACTERISTICS (Tcase = 25°C unless otherwise specified)

Symbol Param eter T est C onditions Min. Typ. Max. Unit

IcEX Collector Cutoff Current < om II < om X VBE - - 1.5V 1 mA

Xo>li

LUO>

VBE = - 1.5V T c = 100°C 3 mA

Iebo Emitter Cutoff Current (lc = 0)

<m CD II Ol < 1 mA

VcEO(sus)' Collector Emitter lc = 0.2A L = 25mH for BUW38 60 V

Sustaining Voltage for BUW39 80 V

Ve80 Emitter-base Voltage (lc = 0 )

Ie = 50mA 7 V

VcE(sat)' Collector-emitter lc = 20A Is =2A for BUW38 0.6 V

Saturation Voltage lc = 40A Is = 4A for BUW38 1.4 V

lc = 15A CD II cn > for BUW39 0.5 V

lc = 30A CO II CO < for BUW39 1.2 V

VsE(sat)* Base-emitter Saturation lc = 40A l B = 4A for BUW38 2.1 V

Voltage lc = 30A l B = 3A for BUW39 2 V

f T Transtion Frequency f = 10MHz V0e = 15A o II < 8 MHz

RESISTIVE LOAD

Symbol Param eter T est C onditions Min. Typ. Max. Unit

ton Turn-on Time for BUW38 1.2 1.5 MS

ts Storage Time Vcc = 60V lc = 40A 0.6 1.1 MS

t. Fall Time CD II I CD CM II Tj-< 0.17 0.25 MS

ts Storage Time for BUW38 1.65 MS

tf Fall Time VCc = 60V lc = 40A

I s i = — lB 2 = 4A Tc = 125°C

0.5 MS

ton Turn-on Time for BUW39 0.8 1.2 MS

ts Storage Time Vcc = 80 V lc = 30A 0.6 1.1 MS

tf Fall Time IB1 = — IB 2 = 3A 0.15 0.25 MS

ts Storage Time for BUW39 1.65 MS

tf Fall Time Vcc = 80V lc = 30A

Ibi = — lB2 - 3A Tc = 125°C

0.5 MS

Pulsed : Pulse duration = 300 jjs, duty cycle = 2 %.

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DC and AC Pulse Area.

'c

Power and Is/bDerating vs. Case Temperature.

Collector-emitter Voltage vs. Base- emitter Resistance.

DC and AC Pulse Area.

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0 S 10 15 20 25 30 35 40 4 S lc < *l

Base Characteristics.

Colie ctor Saturation Region. Saturation Voltages.

Collector Current Spread vs. Base Emitter Voltage.

DC Current Gain.

BUW39 k

\

_

\\

I

I

__

J

V

A k

\

0<.

\

k

s** > _ Lv

0 5 10 16 20 25 30 35 lc<AI

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Minimum Base Current to saturate the Transistor.

0 5 10 15 20 26 le t A)

Collector Saturation Region.

Collector Current Spread vs. Base Emitter Voltage.

Base Characteristics.

0 0.5 1 1.5 2 2.5 i b(A1

Saturation Voltages.

SGS-THOMSON 5/9

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SWITCHING OPERATING AND OVERLOAD AREAS TRANSISTOR FORWARD BIASED

. During the turn on

. During the turn off without negative base- emitter voltge and Rbe > 5 0

Forward Biased Safe Operating Area (FBSOA).

'c

(A) 40

30

20

10

0

0 10 20 3 0 4 0 SO 60 1 0 SO VcE<V)

The hatched zone can only be used for turn-on.

T BUW

< 1 2 -

» i ° C

1 L im it

fo r tu onl m V.

and t i rn o fl n

1

< 1 p E < 5 o n J

TRANSISTOR REVERSE BIASED

. During the turn off without negative base- emitter voltge

•c

(A)

BU T j < 1

tV 38 25 °C

70

10

0

VEE = ” V

0 60 120 V CE(V)

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SGS-THOMSON

MCHMUKS1NMIICS 6/9

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Forward Biased Accidental Overload Area (FBAOA).

Reverse Biased Accidental Overload Area (RBAOA).

1 BUW38 t T j< 1 2 5 ° C

V JE = - 3 V

0 60 120 Vc e i v)

The Kellog network (heavy print) allows the calcu­

lation of the maximum value of the short circuit cur­

rent for a given base current IB (90% confidence).

High accidental surge currents (I > Ic m) are allowed times during the component life.

Forward Biased Safe Operating Area (FBSOA).

Afterthe acidental overload current, the RBAOA has to be used for the turn off.

if they are non repetitive and applied less than 3000

Reverse Biased Safe Operating Area (RBSOA).

O 20 40 60 80 100 120 140 160 V CE(V)

The hatched zone can only be used for turn-on.

/ T7 SGS-THOMSON

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Forward Biased Accidental Overload Area (FBAOA).

'CSM (A)

80 70

80

SO 40

30

70 10 0

0 10 30 30 40 SO 80

Reverse Biased Accidental Overload Area (RBAOA).

The Kellog network (heavy print) allows the calcu- rent for a given base current Ib (90% confidence), lation of the maximum value of the short-circuit cur-

High accidental surge currents (I > Icm) are allowed if they are non repetitive and applied less than 3000 times during the component life.

Switching Times vs. Collector Current (resistive load).

0 to 20 30 40 'c<AI

Switching Times vs. Collector Current (resistive load).

0 5 10 15 20 25 30 l C (A)

T SGS-THOMSON

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Switching Times vs. Junction Temperature.

0 25 50 76 100 125 tj(°C )

Switching Times vs. Collector Current (inductive load).

0 10 20 30 40 50 60 lc<A)

Switching Times vs. Collector Current (inductive load).

0 10 20 30 40 lc (A )

SGS-THOMSON

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