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rz t s g s - t h o m s o n

* 7 # li!fllllgS ® IILiC ?[S !® B ie$ B U X 2 5

NPN SILIC O N T R A N S IS T O R

, -G H SPEED, HIGH VOLTAGE, HIGH POWER

"PANSISTOR

5

WITCHING AND AMPLIFIER TRANSISTOR

INTERNAL SHEMATIC DIAGRAM

-BSOLUTE MAXIMUM RATINGS

S y m b o l P a r a m e t e r V a lu e U n it

VcBO C olle cto r-b a se V o lta ge 500 V

VcEO C o lle cto r-e m itte r V o ltage 500 V

VcER C o lle cto r-e m itte r V o lta ge (Rbe = 100Q ) 500 V

X

o>

C o lle cto r-e m itte r V o lta ge (Vbe = - 1.5V) 500 V

Vebo E m itte r-b a se V o ltage 7 V

lc C ollecto r C u rre n t 15 A

ICM (tp = 10m s) 20

Ib B ase C u rre n t 3 A

Plot P o w e r D issipation (T case 25°C ) 350 W

ti T stg

S to ra g e a n d Ju nctio n T e m p e ra tu re (m ax) 200

- 65 to + 200

°C

Novem ber 1988 1/4

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BUX25

THERMAL DATA

R th (j-c ) Ju nctio n -ca se T h e rm a l R esistance M ax 0.5 “ C/W

STATIC CHARACTERISTICS

(tcase = 2 5 ° C u n le s s o th e r w is e s ta te d )

S y m b o l P a r a m e t e r T e s t C o n d i t i o n s M in . T y p . M a x . U n it

IcEO C o lle c to r-e m itte r C ut-off C u rre n t

V CE = 4 00 V l B = 0 3 mA

IcEX C o lle cto r-e m itte r C ut-off Vce = 500V V BE = - 1.5V 3 mA

C u rre n t

V CE = 500V V BE = - 1.5V

tease = 125°C 12 mA

Ie b o E m itte r-b ase C u t-o ff C u rre n t V EB = 5V lc = 0 1 mA

VcEO(sus) C o lle c to r-e m itte r B reakdow n V o ltage (fig. 1)

<EooCMOII IIOCD L = 2 5m H 5 00 V

V(BR)EBO E m itte r-b ase B reakdow n Voltage

Ie = 50m A l C = 0 7 V

hFE * DC C u rre n t G ain >

IIO> <II-9 15 60

>IIIDO>

lc = 8 A 8

VcEsat* C o lle c to r-e m itte r S a tu ra tion O II > l B = 0.8A 0.2 0.6 V

Voltage

o II 00 > l B = 1.6A 0.6 1 V

VBEsat* B a se -e m itte r S a tu ra tion Voltage

o II 00 > l B = 1.6A 1.2 1.5 V

Is/B Second B re akd o w n C olle cto r V CE = 140V t = 1 s 0.15 A

C u rre n t

V CE = 25V t = 1s 14 A

* Pulsed tp = 300 \is 8 < 2 %.

DYNAMIC CHARACTERISTICS

( fo r s m a ll s ig n a ls u n le s s o th e r w is e s ta te d )

S y m b o l P a r a m e t e r T e s t C o n d i t i o n s M in . T y p . M a x . U n it

f T T ra n sitio n F re q ue n cy Vce= 15V lc = 2A

f = 10M H z 8 M H z

to n T u rn -o n T im e (fig. 2) O II 00 > 03 II CT3 > 0.9 1.8 ps

t ( Fall T im e (fig. 2) lc = 8A I b1 = 1.6A

IB 2 = — 1-6A 0.9 1.6 ps

ts C a rrie r S to ra g e T im e (fig. 2) lc = 8 A I b1 = 1.6A

IB2 = — 1-6A 3.5 5 ps

SGS-THOMSON

MCmUBimaaDCa 2/4

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BUX25 Dissipation and Is® derating.

(°C )

Figure 1

:

T est C ircu it

v c e o(sus).

h o rizo n ta l

N o te : The sustaining voltage Vceois acceptable when the trace falls to the right and above point "A".

SGS-THOMSON SWCKIffiLBCrWMICt

3/4

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BUX25

Figure 2 : S w itching Tim es T est C ircuits (and oscillo gra m s).

Ibi and Ib2 mesured with Tektronix probe P 6021 Rc - Rb : non-inductive resistances

and Am plifier type 134. tp : Pulse width = 10ps

Forme factor < 1%

Rise and fall time < 100ns.

4/4

G J

SGS-THOMSON

6»aac»s)(auscirR©oaocs

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