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i, Dnc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

BUZ 385

N channel

Enhancement mode FREDFET

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

Pin1 Pin 2 D

Pin 3

Type BUZ 385

VDS

500V

ID

9 A

^DS(on) 0.8 Q

Package TO-218AA

Maximum Ratings Parameter

Drain source voltage Drain-gate voltage RGS = 20 kQ

Continuous drain current 7C = 25 °C

Pulsed drain current Tc = 25 °C

Gate source voltage Power dissipation Tc = 25 °C

Operating temperature Storage temperature

Thermal resistance, chip case Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Symbol VDS

^DGR

ID

'Dpuls

VGS

^tot

T\S\Q

ftthJC

^thJA

Values 500

500

9

36

±20

125 -55... + 150 -55... + 150

< 1 75 E

5 5 / 1 5 0 / 5 6

Unit V

A

V W

°C

K/W

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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BUZ 385

Electrical Characteristics, at 7] = 25°C, unless otherwise specified

Parameter Symbol Values

min. typ. max.

Unit

Static Characteristics

Drain- source breakdown voltage VQS = 0 V, /D = 0.25 mA, 7] = 25 °C Gate threshold voltage

VGS=VDS, b = 1 ™A

Zero gate voltage drain current l/bs = 500 V, VGS = 0 V, 7j = 25 °C VDS = 500 V, VGS = 0 V, 7] = 125 °C Gate-source leakage current

VGS = 20 V, l/bs = 0 V Drain-Source on-resistance

VGS = 10V, /o = 6.5A

V(BR)DSS

VGS(th)

/DSS

/GSS

^DS(on)

500

2.1

- -

,

-

-

3.5

20 100

10

0.6

-

4

250 1000

100

0.8

V

MA

nA

Q

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BUZ 385

Electrical Characteristics, at 71 = 25°C, unless otherwise specified

Parameter Symbol Values

min. typ. max.

Unit

Dynamic Characteristics Transconductance

VDS> 2 * /D * /?DS(on)max, /D = 6-5 A Input capacitance

VQS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time

RGS = 50 ft Rise time

VDD = 30 V, VGS = 10 V, /D = 2-8 A RGS = 50 ft

Turn-off delay time

VDD = 30 V, VGS = 10 V, /D = 2.8 A RGS = 50 ft

Fall time

VDD = 30 V, VGS = 10 V, /D = 2.8 A RGS = 50 ft

A

Qss

Coss

c

rss

td(on)

'

'd(off)

?f

2.7

.

6.7

3800

250

100

50

80

330

110

4900

400

170

75

120

430

140

S

PF

ns

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BUZ 385

Electrical Characteristics, at 7] = 25°C, unless otherwise specified

Parameter Symbol Values

min. typ. max.

Unit

Reverse Diode

Inverse diode continuous forward current Tc = 25 °C

Inverse diode direct current, pulsed 7C = 25 °C

Inverse diode forward voltage l/GS = 0 V, /F = 21 A

Reverse recovery time

VR = 100 V, /F=/s, d/p/df = 100 A/us Reverse recovery charge

VR = 100 V, /F=/s, d/F/df = 100 A/MS

Is

ISM

VSD trr

Qrr

-

-

-

-

-

-

-

1.3

180

0.65

9

36

1.7

250

1.2

A

V

ns

uC

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