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© Semiconductor Components Industries, LLC, 2011

October, 2011 − Rev. 6 1 Publication Order Number:

BUH50/D

SWITCHMODE NPN Silicon Planar Power Transistor

The BUH50G has an application specific state−of−art die designed for use in 50 W HALOGEN electronic transformers and SWITCHMODE applications.

Features

• Improved Efficiency Due to Low Base Drive Requirements:

High and Flat DC Current Gain h

FE

Fast Switching

• ON Semiconductor Six Sigma Philosophy Provides Tight and Reproductible Parametric Distributions

• Specified Dynamic Saturation Data

• Full Characterization at 125°C

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Sustaining Voltage VCEO 500 Vdc

Collector−Base Breakdown Voltage VCBO 800 Vdc

Collector−Emitter Breakdown Voltage VCES 800 Vdc

Emitter−Base Voltage VEBO 9 Vdc

Collector Current − Continuous

− Peak (Note 1) IC ICM

48 Adc

Base Current − Continuous

− Peak (Note 1) IB

IBM 2

4 Adc

Total Device Dissipation @ TC = 25_C

Derate above 25°C PD 50

0.4 W

W/_C Operating and Storage Temperature TJ, Tstg −65 to 150 _C THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds TL 260 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

POWER TRANSISTOR 4 AMPERES 800 VOLTS, 50 WATTS

TO−220AB CASE 221A−09

STYLE 1

1

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MARKING DIAGRAM

BUH50 = Device Code A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package 23

BUH50G AY WW

Device Package Shipping ORDERING INFORMATION

BUH50G TO−220

(Pb−Free) 50 Units / Rail

(2)

ELECTRICAL CHARACTERISTICS(TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic ÎÎÎÎ

ÎÎÎÎ

SymbolÎÎÎÎ

ÎÎÎÎ

Min ÎÎÎ

ÎÎÎ

TypÎÎÎÎ

ÎÎÎÎ

Max ÎÎÎ

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) ÎÎÎÎ

ÎÎÎÎ

VCEO(sus)ÎÎÎÎ

ÎÎÎÎ

500 ÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = Rated VCEO, IB = 0)

ÎÎÎÎ

ÎÎÎÎ

ICEO

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current @ TC = 25°C

(VCE = Rated VCES, VEB = 0) @ TC = 125°C ÎÎÎÎ

ÎÎÎÎ

ICES

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

1000100 ÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Cutoff Current (VEB = 9 Vdc, IC = 0) ÎÎÎÎ

ÎÎÎÎ

IEBO ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

100 ÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage (IC = 1 Adc, IB = 0.33 Adc) (IC = 2 Adc, IB = 0.66 Adc) 25°C (IC = 2 Adc, IB = 0.66 Adc) 100°C

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

VBE(sat)ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎ

0.860.94 0.85

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

1.21.6 1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage (IC = 1 Adc, IB = 0.33 Adc)

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎ

0.2

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

0.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 2 Adc, IB = 0.66 Adc) ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎ

0.320.29

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

0.60.7

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 3 Adc, IB = 1 Adc)

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

0.5

ÎÎÎÎ

ÎÎÎÎ

1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 1 Adc, VCE = 5 Vdc) ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

hFE ÎÎÎÎ

ÎÎÎÎ

7 ÎÎÎ

ÎÎÎ

13 ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 2 Adc, VCE = 5 Vdc) ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C ÎÎÎÎ

ÎÎÎÎ

5 ÎÎÎ

ÎÎÎ

10 ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) ÎÎÎÎ

ÎÎÎÎ

fT ÎÎÎÎ

ÎÎÎÎ

4 ÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) ÎÎÎÎ

ÎÎÎÎ

Cob ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

50 ÎÎÎÎ

ÎÎÎÎ

100 ÎÎÎ

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Input Capacitance (VEB = 8 Vdc) ÎÎÎÎ

ÎÎÎÎ

Cib ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

850ÎÎÎÎ

ÎÎÎÎ

1200 ÎÎÎ

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC SATURATION VOLTAGE

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Dynamic Saturation Voltage:

Determined 1 ms and 3 ms respectively after rising IB1 reaches 90% of final IB1

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

IC = 1 A IB1 = 0.33 A VCC = 300 V

ÎÎÎ

ÎÎÎ

@ 1 ms

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

VCE(dsat)

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

1.755 ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

V

ÎÎÎ

ÎÎÎ

ÎÎÎ

@ 3 msÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎ

0.30.5

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎ

V

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

IC = 2 A IB1 = 0.66 A VCC = 300 V

ÎÎÎ

ÎÎÎ

@ 1 ms

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

146 ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

V

ÎÎÎ

ÎÎÎ

@ 3 msÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

0.754

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms)

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn−on Time ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 125 Vdc

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C ÎÎÎÎ

ÎÎÎÎ

ton ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

95 ÎÎÎÎ

ÎÎÎÎ

250 ÎÎÎ

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn−off Time ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C ÎÎÎÎ

ÎÎÎÎ

toff ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

2.5ÎÎÎÎ

ÎÎÎÎ

3.5 ÎÎÎ

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn−on Time ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

IC = 2 Adc, IB1 = 0.4 Adc IB2 = 1 Adc VCC = 125 Vdc

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C ÎÎÎÎ

ÎÎÎÎ

ton ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

110ÎÎÎÎ

ÎÎÎÎ

250 ÎÎÎ

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn−off Time ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C ÎÎÎÎ

ÎÎÎÎ

toff ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

0.95ÎÎÎÎ

ÎÎÎÎ

2 ÎÎÎ

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn−on Time ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

IC = 1 Adc, IB1 = 0.3 Adc IB2 = 0.3 Adc VCC = 125 Vdc

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C ÎÎÎÎ

ÎÎÎÎ

ton ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

100ÎÎÎÎ

ÎÎÎÎ

200 ÎÎÎ

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn−off Time ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C ÎÎÎÎ

ÎÎÎÎ

toff ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

2.9ÎÎÎÎ

ÎÎÎÎ

3.5 ÎÎÎ

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

IC = 2 Adc IB1 = 0.4 Adc

IB2 = 1 Adc

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

tf ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎ

8095

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

150 ÎÎÎ

ÎÎÎ

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C ÎÎÎÎ

ÎÎÎÎ

ts ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

1.21.7ÎÎÎÎ

ÎÎÎÎ

2.5

ÎÎÎ

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Crossover Time ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

tc ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

ÎÎÎ

150180

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

300 ÎÎÎ

ÎÎÎ

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

IC = 2 Adc IB1 = 0.66 Adc

IB2 = 1 Adc

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C ÎÎÎÎ

ÎÎÎÎ

tf

ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

10090 ÎÎÎÎ

ÎÎÎÎ

150

ÎÎÎ

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎÎ

ts ÎÎÎÎ

ÎÎÎÎ ÎÎÎ

ÎÎÎ

1.72.5

ÎÎÎÎ

ÎÎÎÎ

2.75 ÎÎÎ

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

tc

ÎÎÎÎÎÎÎ

190

ÎÎÎÎ

350

ÎÎÎ

ns

(3)

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TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt 100

10

1

10 1

0.1 0.01

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125°C TJ = 25°C TJ = -40°C

VCE = 1 V

Figure 2. DC Current Gain @ 5 Volt 100

10

1

10 1

0.1 0.01

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125°C TJ = 25°C TJ = -40°C

VCE = 5 V

Figure 3. Collector Saturation Region 10

1

0.1

10 1

0.1 0.01

IB, BASE CURRENT (mA) IC = 500 mA

Figure 4. Collector−Emitter Saturation Voltage 10

1

0.01

10 1

0.1 0.01

IC, COLLECTOR CURRENT (AMPS) TJ = 125°C TJ = 25°C

TJ = -40°C IC/IB = 3

VCE, VOLTAGE (VOLTS) VCE, VOLTAGE (VOLTS)

TJ = 25°C

2 A

4 A

Figure 5. Collector−Emitter Saturation Voltage 10

1

0.01

10 0.1

0.01

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Base−Emitter Saturation Region 10

1

0.1

10 0.1

0.01

IC, COLLECTOR CURRENT (AMPS) TJ = 125°C

TJ = 25°C TJ = -40°C

VCE, VOLTAGE (VOLTS) VBE, VOLTAGE (VOLTS)

1 TJ = 125°C

TJ = 25°C TJ = -40°C 3 A

1 A 0.1

0.1

IC/IB = 5

1 IC/IB = 3

(4)

Figure 7. Base−Emitter Saturation Region 10

1

0.1

10 1

0.1 0.01

IC, COLLECTOR CURRENT (AMPS)

VBE, VOLTAGE (VOLTS)

TJ = 125°C

TJ = 25°C

TJ = -40°C

Figure 8. Capacitance 10000

10

1

100 10

1

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

100

Cib (pF)

Cob (pF) TJ = 25°C f(test) = 1 MHz IC/IB = 5

1000

TYPICAL STATIC CHARACTERISTICS

TYPICAL SWITCHING CHARACTERISTICS

Figure 9. Resistive Switching, ton 3000

1000

0

5 2

1

IC, COLLECTOR CURRENT (AMPS) 4

t, TIME (ns)

2000

1500

500

TJ = 125°C TJ = 25°C

IC/IB = 3 IBoff = IC/2

VCC = 125 V PW = 20 ms

Figure 10. Resistive Switch Time, toff 4000

0

5 4

1

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Storage Time, tsi 4000

2000

0

4 2

1

IC, COLLECTOR CURRENT (AMPS) 3000

1000

3000

2000

1000

TJ = 125°C TJ = 25°C

IC/IB = 3

3 TJ = 125°C

TJ = 25°C

IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH

Figure 12. Inductive Storage Time, tc & tfi @ IC/IB = 3

300

0

4 3

1

IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

200

100

2

TJ = 125°C TJ = 25°C IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH

tc

tfi 2500

3 IC/IB = 5

t, TIME (ns)

t, TIME (ns)

IC/IB = 3

IC/IB = 5

IBoff = IC/2 VCC = 125 V PW = 20 ms

2 3

IC/IB = 5

(5)

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TYPICAL CHARACTERISTICS

Figure 13. Inductive Switching, tc & tfi @ IC/IB = 5

4000

2000

0

10 5

3

hFE, FORCED GAIN

9 3000

1000

7

, STORAGE TIME (

t si

μs)

IC = 1 A TJ = 125°C TJ = 25°C

Figure 14. Inductive Storage Time 250

0

4 3

1

IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

100

50

2

TJ = 125°C TJ = 25°C

IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH

tc

tfi 200

150

4 6 8

IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH

IC = 2 A

Figure 15. Inductive Fall Time 150

50

10 2

hFE, FORCED GAIN

Figure 16. Inductive Crossover Time 350

150

50

11 5

3

hFE, FORCED GAIN 9 250

130

t fi, FALL TIME (ns)

t c, CROSSOVER TIME (ns)

140

110

90

70 60

4 6 8

TJ = 125°C TJ = 25°C IC = 1 A

7 TJ = 125°C

TJ = 25°C 120

100

80

IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH

IC = 2 A

IC = 1 A

IC = 2 A IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH

Figure 17. Forward Power Derating 1

0

160 100

20

TC, CASE TEMPERATURE (°C) 0.8

POWER DERATING FACTOR

0.6

0.4

0.2

60 140

SECOND BREAKDOWN DERATING

40 80 120

THERMAL DERATING

(6)

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I

C

−V

CE

limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 20 is based on T

C

= 25°C; T

J(pk)

is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be de−rated when T

C

> 25 °C. Second breakdown limitations do not de−rate the same as thermal limitations. Allowable current at the voltages shown on Figure 20 may be found at any case temperature by using the appropriate curve on Figure 17.

T

J(pk)

may be calculated from the data in Figure 22. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 21). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

TYPICAL CHARACTERISTICS

Figure 18. Dynamic Saturation Voltage TIME

Figure 19. Inductive Switching Measurements VCE

0 V

IB

90% IB 1 ms

3 ms dyn 1 ms

dyn 3 ms

Figure 20. Forward Bias Safe Operating Area 10

0.01

1000 10

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 21. Reverse Bias Safe Operating Area 5

2

0

900 300

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 4

100 600

1

0.1

I C, COLLECTOR CURRENT (AMPS)

I C, COLLECTOR CURRENT (AMPS)

DC 5 ms

1 ms 10 ms 1 ms

3

1

GAIN ≥ 3

0 V -1.5 V

- 5 V TC≤ 125°C LC = 500 mH 10

4

00 2 8

TIME

6 8

6

2

4 9

7

5

3

1

1 3 5 7

IB IC

Vclamp tc

tfi 90% IC

10% IC

90% IB1 10% Vclamp

tsi

EXTENDED SOA

(7)

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TYPICAL CHARACTERISTICS

Table 1. Inductive Load Switching Drive Circuit

V(BR)CEO(sus)

L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA

Inductive Switching L = 200 mH RB2 = 0 VCC = 15 Volts RB1 selected for

desired IB1

RBSOA L = 500 mH RB2 = 0 VCC = 15 Volts RB1 selected for

desired IB1 +15 V

1 mF 150 W 3 W

100 W 3 W

MPF930 +10 V

50 W COMMON

-Voff

500 mF MPF930

MTP8P10

MUR105

MJE210

MTP12N10 MTP8P10

150 W 3 W

100 mF

Iout A RB1

RB2

1 mF

IC PEAK

VCE PEAK VCE

IB IB1

IB2

Figure 22. Typical Thermal Response (ZqJC(t)) for BUH50 1

0.01

10 0.1

0.01

t, TIME (ms) 0.1

1 100 1000

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

RqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) P(pk)

t1 t2

DUTY CYCLE, D = t1/t2 0.05

SINGLE PULSE 0.5

0.2 0.1

0.02

(8)

PACKAGE DIMENSIONS

TO−220 CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERS INCHES

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.036 0.64 0.91 F 0.142 0.161 3.61 4.09 G 0.095 0.105 2.42 2.66 H 0.110 0.161 2.80 4.10 J 0.014 0.025 0.36 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27

V 0.045 --- 1.15 ---

Z --- 0.080 --- 2.04

B

Q

H Z

L V

G N

A

K F

1 2 3 4

D

SEATING PLANE

−T−

C T S

U

R J

STYLE 1:

PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

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