ECIO '95
Proceedings
7th European Conference
on Integrated Opties
April 3-6, 1995
Delft, The Netherlands
ECIO '95
Proceedings
7th European Conference
on Integrated Opties
with Technical Exhibition
Bibliotheek TU O@lft
11111111/1111111111111111111111111 A'il 3-6, 1995
[
etherlands
lted Papers
C OQ03814023Editing: L. Shi
L.H. Spiekman
X.J .M. Leijtens
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437
9
lil C""Published by: Delft University Press
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Proeeedings of ECIO'95 and ECIO'93 ean he obtained from Information Gatekeepers, Ine.
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ECIO
ECIO'95/ ed.: L.Shi et al- Delft: Delft University Press. -lIl. - Proceedings of the 7th European Conference on Integrated Opties, Delft University of Technology, 3 - 6 April 1995, Delft. - With lit.
ISBN 90-407-1111-9 NUGI812
Subject headings: integrated opties / photonies / guided wave deviees
Cover design: Cor van Dam
Copyright © 1995 by the authors
All rights reserved.
No part of these proceedings may he reprodueed in any manner without permissions in writing from the publisher: Delft University Press, Stevinweg 1,2628 CN Delft, The Netherlands.
Printed in The Netherlands
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Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95)
Foreword of the ECIO'95 Chairman
3
The European Conference on Integrated Optics (ECIO) was first organized in 1981 in London and is now one of the leading conferences in the field of Integrated Optics. It is held every two years, and starting with ECIO'93 in Neuchätel it has been combined with atechnical exhibition.
The last meeting - Neuchätel, 1993 - took place in a turbulent period for optical communication as a whole and integrated optics in particular. After the very rapid penetration of monornode fibre in the trunk network in the middle of the 80s the expected market volume growth for optical components rose to unrealistic heights. As in the early 90s it became clear that these expectations would not be realised in the near term many companies reduced their investments in research and development. This process was accelerated by the economic recession and the large-scale privatisations in the telecommunication area, refocusing attention from long-term development to short-term survival. Recent developments, however, give rise to increasing optimism for the future.
Despite these fluctuating perspectives optical communication and integrated optics continued to grow. FoHowing the example of LiNb03 components integrated glass, III-V and polymer components are now reaching technological maturity, a development which is reflected in the papers presented at the conference. Complicated integration schemes have been succesfully demonstrated. Fibre coupling and packaging technology are reaching a performance with which a wide spectrum of applications can be covered. Examples of succesful applications are presented in a special session. Although the competition with hybrid integrated components is still stiff, the growing market volume and the increased complexity of circuits which is supported by the present state of integration technology, has widened the number of fields where integration leads to better or cheaper alternatives.
On the market side important developments are also progressing. In several places large-scale projects are being executed which bring the fibre to or very close to the home, and there is little doubt that it will reach most ofthe homes in urban areas in the coming decades. The demand for capacity in data-communication applications is rapidly increasing and services such as Internet contribute to this demand. Multimedia services williead to a further increase and advanced optical networks are going to provide the backbone for a novel information culture. The new European Program on Advanced Communication Technologies and Services (ACTS) wil! provide a platform for coordinated research and development ofboth the new services and the infrastructure which is required to support them.
Although telecommunications is undoubtedly the most important market for Integrated Optics, applications in other area's such as sensors, microsystems and data storage are also positively im-pacted by the improving technological possibilities. For these applications low-cost coupling and hybridization techniques are of even greater importance than for the telecommunication market and low-cost technologies like polymer-technology are of crucial importance for the development of the field.
The ECIO conference cycle combines a high scientific standard with astrong emphasis on appli-cations, which is reflected in the large number of speakers and attendees from industry. Consistent with our emphasis on applications we are pleased that for the second time the ECIO conference has been combined with a fuH technical exhibition. As in the past an Industrial Committee has stimulated the presentation of Integrated Optics applications.
Although the Conference is a European event we are pleased that it continues to attract a large number of participants from outside Europe among its speakers and its audience. We are also happy that a considerable number of researchers from Eastern Europe are presenting their work at the conference.
The success of ECIO'95 is due to the cooperation of many individuals and institutions. The members of the local committee invested a lot of time and enthousiasm in the organization of both the conference and the exhibition. The co- sponsors and the ECIO-committees (the Standing, the Program and the Industrial Committee) helped in organizing and giving publicity to the event. The Delft University contributed with free conference facilities and many hours of personnel involved in
4 Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95)
the organisation. Other sponsors helped covering the financial risk; a special word of thank is due to the Foundation for Conferences on Optical Cornrnunication and its members W. Wapenaar and J. Hodes who gave full backing to the organizers from a very early stage. Finally a word of thank is due to the city of Delft and the members of the Delft Tourist Information Office, whose help in organizing hotel accomodations was invaluabie.
I hope that all the work invested in this conference will contribute to a fruitful exchange of ideas and information and to a rapid development of the field of Integrated Optics.
;m;eb
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Proc. 7th Eur. Conf. on Int. Opt. (EeIO '95)
ECIO '95 Sponsors
Foundation for Conferences on Optica! Cornrnunication (Netherlands) Akzo Nobel Electronic Products
AT&T Network Systems NL BV City of Delft
Delft University of Technology Philips Optoelectronics Centre PTT Research
Roya! Netherlands Academy of Arts and Sciences (KNAW)
Co-sponsoring Societies
Comité BeIge d'OptiqueCzechoslovak Society for Photonics Danish Optical Society
Deutsche Gesellschaft für angewandte Optik (DGaO) Dutch Society for Optics and Photonics
European Optica! Society (EOS)
IEEE Lasers and Electro-Optics Society (IEEE-LEOS) International Commission for Optics (lCO)
Optical Society of America (OSA) Rozhdestvensky Optical Society
Società Italiana di Ottica e Fotonica (SlOF) Societé Française d'Optique (SFO) Spanish Optical Society (SEDO) Swedish Optical Society
Swiss Society for Optics and Electron Microscopy (SSOEM)
The Institute of Electronics, Information and Cornrnunication Engineers, Japan (IElCE) The Institute of Physics (IOP)
The Institution of Electrical Engineers (IEE)
The International Society for Optical Engineering (SPIE) Verband Deutscher Elektrotechniker (VDE)
6 Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95)
ECIO '95 List of Exhibitors
Akzo Nobel Electronic Products, The Netherlands Logitech Ltd., United Kingdom
Pirelli Cavi S.p.A., Italy
Melles Griot B.v., The Netherlands Hewlett-Packard, The Netherlands BBV Software B.V., The Netherlands Newport B.V., The Netherlands
JENOPTIK Technologie GmbH, Germany Photon Design, United Kingdom
LETI (CEA), France
University of Paderborn, Germany CSEM, Switzerland
Alcatel SEL A.G., Germany Research Center Karlsruhe, Germany
rnicroParts Gesellschaft für Mikrostrukturtechnik mbH, Germany Optilas B.V., The Netherlands
Fraunhofer-Institute ofPhysica! Measurement Technique, Germany Optiwave Corporation, Canada
Hositrad Holland B.V., The Netherlands Surface Technology Systems Ltd., Germany
Integrated Optica! Components Ltd., United Kingdom Dutch IOP "Electro-Optics", The Netherlands Elsevier Science B.V., The Netherlands IOP Publishing Ltd., United Kingdom John Wiley & Sons, Ltd., United Kingdom Taylor & Francis, United Kingdom Optonex Ltd., Finland
Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95)
ECIO Standing Committee
R Baets, Gent University, Belgium A. Carenco, France Telecom-CNET, France 1. Ctyroky, IREE, Czech Republic
C. De Bernardi, CSELT, Italy
RM. De La Rue, Glasgow University, UK D. Ostrowsky, Nice University, France O. Parriaux, CSEM, Switzerland M.K. Smit, TU Delft, The Netherlands W. SohIer, Paderborn University, Germany
ECIO '95 Program Committee
Re. Alferness, AT&T BeU Laboratories, USA M. Armenise, Bari University, ItalyG. Arvidsson, Institutet for Optisk Forskning, Sweden R Baets, Gent University, Belgium
A. Carenco, France Telecom-CNET, France A. Carter, GMMT, UK
P. Chavel, ICO, France
J. Ctyroky, IREE, Czech Republic C. De Bernardi, CSELT, Italy
RM. De La Rue, Glasgow University, UK
M.B.l. Diemeer, Akzo Nobel Electronic Products, The Netherlands H.l. Frankena, TU Delft, The Netherlands
D.R Keck, Corning, USA
H. MeIchior, ETH Zürich, Switzerland H. Nishihara, Osaka University, Japan D. Ostrowsky, Nice University, France M. Papuchon, Thomson-CSF, France O. Parriaux, CSEM, Switzerland N.J. Parsons, GEC-Marconi, UK M.K. Smit, TU Delft, The Netherlands W. SohIer, Paderborn University, Germany A.G. Steventon, BTL, UK
K. Stubkjrer, Technical University of Denmark v.A. Sychugov, IOFAN, Moscow, Russia S. Valette, LET!, France
H. Venghaus, Heinrich Hertz Institute, Germany
RH. Verbeek, Philips Optoelectronics Centre, The Netherlands E. Voges, Dortmund University, Germany
iW WU: i mi lild_' 9 • • LU' IEWilIlI . '1 8J
8 Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95)
ECIO '95 Industrial Committee
B.R. Verbeek, Philips Optoelectronics Centre, The Netherlands (Chairman) S. Bosso, Pirelli Cavi, Italy
H.J. Frankena, TPDtrNO-TUD, The Netherlands K. GroBkopf, lOT, Germany
S. Honkanen, Optonex, Finland
W.H. Horsthuis, Akzo Nobel Electronic Products, The Netherlands K. Ishida, OITDA, Japan
R.Th. Kersten, Jenoptik Laserdiode, Germany
A.MJ. Koonen, AT&T Network Systems, The Netherlands F.J. Leonberger, United Technologies Photonics, USA M. McCourt, Corning, France
G. Mesquida, AlcateI Optoelectronics, France R. Regener, AlcateI SEL, Germany
H. Richter, Telekom, Germany G. Voirin, CSEM, Switzerland
F. Wall, GEC Advanced Optical Products, UK
ECIO '95 Local Organization Board
M.K. Smit (TU Delft, Conference Chairman) H.l. Frankena (TU Delft)
Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95)
ECIO '95 Local Organization Committee
(All members are with the Delft University of Technology)Aad de Vreede CorvanDam Eddy van Brug FokkeGroen Frans van Ham Joe Tauritz Kees Steenbergen Kees Vreeburg Koos van Uffelen Leo Spiekman Liang Shi Meint Smit Mia van der Voort Sehra van Lienden Siang Oei Tom Scholtes Trees Moritz Xaveer Leijtens
10 Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95)
ECIO '95 Program Overview
Monday, April 3
16.00-20.00 Registration, Get-together 16.00-20.00 Exhibition
Thesday, April 4
10.00-17.00 Exhibition9.00-10.30 Plenary Opening Session 10.30-11.00 Coffee Break
11.00-12.40 Semiconductor Lasers Polymer Devices 12.40-14.00 Lunch
14.00-15.25 Optoelectronic Integration Measurement and Characterization 15.25-17.00 Poster Session, CotTee
17.00-18.00 Optical Switches and Modulators I Rare Earth-Doped Devices I 18.30 Reception at the City Hall
Wednesday, April 5
10.00-17.00 Exhibition 8.30-10.10 Plenary Session 10.10-10.40 Coffee Break 10.40-12.10 WDM Devices I Waveguide Technology 12.10-14.00 Lunch 12.30-13.45 Product Session 14.00-15.35 Passive Components Nonlinear Devices 15.35-17.10 Poster Sessioo, Coffee 17.10-18.15 Sensors and MicrosystemsModelling aod Design Methods 19.30 Conference Dinner
Thursday, April 6
10.00-15.00 ExhibitionProc. 7th Eur. Conf. on Int. Opt. (ECIO '95)
8.30-10.00 Post-deadline Session 10.00-10.25 Coffee Break
10.25-12.00 Applications ofIntegrated Optics WDM Devices 11
12.00-13.15 Lunch
13.15-14.35 Optical Switches and Modulators 11
Photonic Bandgap and Active Grating Devices 14.35-15.00 Break
15.00-16.10 Rare Earth-Doped Devices 11
Hybridization and Packaging Technologies 16.10-16.25 Closing Ceremony
16.25- Coffee
Friday, April 7
9.00-17.30 Laboratory Visits
Akzo Nobel Electronic Products, Arnhem DIMES, Delft
AT &T Network Systems Nederland, Huizen Philips Research, Eindhoven
8:30
10:00
12:00
14:00
Mond~
April 3 Tuesday April 4
Wednesday
AprilS Thursday April 6
·•· ••• ··· •• · •••• · ••••• ·•· ••••• · •••••••••• ·rl - - - ,
Plenary Opening Session Auditorium Semiconductor Lasers Room A Polymer Devices RoomC
Poster Session, Coffee
Reception at the City Hall
Plenary Session Auditorium
Passive Components
Room A RoomC
Poster Session, Coffee
Conference Dinner Post·deadline Session Auditorium Applications of Integrated Optics Coffee WDM Devices II RoomC - - - _. - - - --Friday April 7 Laboratory Visits AkzoNobel Electronic Products, Arnhem 9.00-17.30 DIMES, Delft 9.30-11.30 can be combined with AT&T Network Systems Nederland Huizen 12.30-17.30 Philips Research, Eindhoven 9.00·17.30
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Contents
Plenary Opening Session
Chairman: M.K. Smit
... JI
Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95) 13
Delft University of Technology, The Netherlands 25
Optical Communication - Today and Tomorrow (Invited)
T. Ikegami, Nippon Telegraph and Telephone Corp., Japan . 25
Prospects for Integrated Optics in Telecom Applications (Invited)
M. Erman, Alcatel Alsthom Recherche, France . . . • . . . . 27
Prospects for Integrated Optics in Sensors and Microsystems (Invited)
O. Parriaux, CSEM Swiss Center for Electronics and Microtechnology, Switzerland • 33
Semi conductor Lasers
Chairman: AM.J. Koonen
AT&T Network Systems, The Netherlands 39
Integration Technology for Thnable Lasers (Invited)
S. lllek, B. Borchert, Siemens Corporate Research and Development, Germany 39
Integrated Optical Amplifiers (Invited)
L.F. Tiemeijer, 1.1 .M. Binsma, P.J.A. Thijs, A.A.M. Staring, R van Roijen, Philips
Optoelec-tronics Centre, The Netherlands, C.T.H.F. Liedenbaum, Philips Research, The Netherlands 45
Ultra-Short PoIse Generation at 1.3 JLm by an Integrated Colliding PoIse Mode-Iocked Laser using All Bulk Material
RG.M.P. Koumans, Eindhoven University of Technology, R van Roijen, B.H. Verbeek, M.B. van der Mark, C.T.H.F. Liedenbaum, 1.1.E. Reid, L.F. Tiemeijer, E.J. Jansen, T. van Dongen, P.J.A Thijs, Philips Optoelectronics Centre and Philips Research Laboratories,
The Netherlands . • . . • . . . • . . . • . . • • . . • . 51
Mode-Locking in Semiconductor Ring Lasers with Two Saturable Absorbers
T.F. Krauss, J. Martins-Filho, C.N. Ironside, P.J.R. Laybourn, RM. De La Rue, University
of Glasgow, Scotland . . . • . . . . • . . . • . 55
Monolithic Extended Cavity GaAslAIGaAs Lasers Fabricated using Impurity-Free Vacancy Diffusion
P. Cusumano, S.G. Ayling, J.H. Marsh, University of Glasgow, Scotland. . . . • . . 59
GaAslAIGaAs Laser Diodes Fabricated using Wet Thermal Oxidation of AlGaAs
O.I. Homan, J.E. Epier, H.W Lehmann, Paul Scherrer Institut, Switzerland . . . . • 63
Polymer Devices
Chairman: G. Arvidsson
Institutet for Optisk Forskning, Sweden 67
Prospects for Integrated Optic Polymer Components (Invited)
WH.G. Horsthuis, R Lytel, Akzo Nobel Electronic Products, The Netherlands . • . •• 67
Optical Intensity Modulation in Diazo-Dye-Substituted Polymer Channel Waveguides
y. Shuto, S. Tomaru, M. Hikita, M. Amano, NTT Opto-Electronics Laboratories, Japan • 73
Injection Moulded 2x8 Couplers for Optical Communications
S. Kalverarn, M. Gro8, A. Neyer, Universität Dortmund, Germany . . . • . . . 77
Integrated Optical Polarizers in PMMA by UV Irradiation
F. Pozzi, C. De Bernardi, CSELT, Italy, S. Morasca, Pirelli Cavi, Italy, A. Schösser, T.
Tschudi, Institut für Angewandte Physik, Germany, WF.X. Frank, Deutsche Bundespost
Telekom, Germany . • . • . . • • . . • • . • . . • . . • • • . • • . . . . • • 81
Polarization Insensitive Phase Modulator Based on Polymers for Hybrid Integration
T. Gase, A Bräuer, W. Karthe, Fraunhofer-Institution for Applied Optics and Precision
14 Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95)
Second Harmonic Generation in Organic Cerenkov-Type and Modematching Devices O.F.J. Noordman, K. Wörhoff, N.F. van Hulst, University of Twente, The Netherlands . 89
Optoelectronic Integration Chairman: H. Venghaus
Heinrich Hertz Institute, Germany 93
Photonic Integration on IoP (Invited)
D. Trommer, Heinrich-Hertz-lnstitutfür Nachrichtentechnik 93 Applications of Quantum Wells in Integrated Opties (Invited)
J.H. Marsh, University of Glasgow, UK . • • . • . . . • • • 99 Monolithically Integrated ActivelPassive Cavity Mode Locked MQW Lasers Realized by Selective Area Growth
E. Lach, D. Baums, C. Hache, H. Haisch, E. Kühn, K. Satzke, M. Schilling, 1. Weber, E. Zielinski, Alcatel SEL, Germany • . • • . . . . • . . • • . • • . • . • . . • . • 105 ill-V Based Integrated Optical Chip for Metrology: Device and Integration Technol-ogy
D. Hofstetter, H.P. Zappe, P. Riel, J.E. Epier, O.J. Homan, Paul Scherrer Institut, Switzerland 109
Microstructure for Waveguide to Photodiode Coupling in Silicon Optoelectronies G. Voirin, P. Sixt, E. Fullin, CSEM Centre Suisse d'Electronique et de Microtechnique, Switzerland. • . • • . . • • • . • • . . . . • . • • . . • . . • . • . • • • . • 113 Measurement and Characterization
Chairman: C. De Bernardi
CSELT, Italy 117
Optical Mode Propagation Along Tapered Amplifiers by Scanning Microscopy with Dielectric Local Probes
R. Cella, B. Mersali, H. Brückner, A Bruno, S. Davy, C. Licoppe, France Telecom CNET, France • • • • • • • • • • • . • • . • . . . • . • . • • • • . • • • • . • • •• 117 Measurement of the Weil and Facet Temperatures of Normally Operating Quantum Weil Lasers by Analysis of the Spontaneous Emission from the Facets
AR. Adams, E. Cariou, University of Surrey, UK, P. Vicente, B. Couzinet, A Raymond, Université Montpellier ll, France • • . . • . . . • . • • . . . . • • •• 121 Optical Imaging of Multimode Interference Patterns with a Resolution Below the DitTraction Limit
C. van Dam, J.W.M. van Uffelen, M.K. Srnit, Delft University of Technology, The Nether-lands, G.N. van den Hoven, A Polman, FOM-institute for Atomie and Molecular Physics, The Netherlands . • . . • • • . • • . . . • . • • . . . 125 Principles of Modelling OLCR Signatures of Photonic Devices
J. CtyrokY, Institute of Radio Engineering and Electronics, Czech Republic 129 Nondestructive Method for Testing the Shift Between the Gratings in the Waveguide with Two Corrugated Boundaries
N.M. Lyndin, V.A Sychugov, B.A Usievich, General Physics Institute, Russia 133
Poster Presentations 137
Passband Engineering of Acousto-Optic Thnable Filters
R.S. Chakravarthy, D.A Smith, Case Western Reserve University, USA, A d' Alessandro, Università degli Studi "La Sapienza ", Italy, J.E. Baran, 1.L. Jackel, Bel/core, USA • •• 137 Coupled Longitudinal Mode Model for Mode Locked Er:LiNb03 Waveguide Lasers
D. Scarano, I. Montrosset, Politecnico di Torino, Italy . . . . • • • • 141 Porous Silicon Fabrication for Microchip Integration
---~---~---_ _ _ __ -'-"-~_~~"'!. H' ._ ·"t'M·'f' ,
Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95) 15
A Micro-Opto-Mechanical Switch in Integrated Opties on Silicon
E. Ollier, P. Labeye, F. Revol, LETI, France . . . . • . . . . . 149 Optical Amplification and Lasing at 1054 nm in Waveguides Realised by Ion Exchange in a High-Nd-Doped Phosphate Glass
J.M. Jouanno, D. Barbier, A. Kévorkian, Groupement d'Electromagnétisme Expérimental
et d'Optoélectronique, Grenoble, France. . . • . . • . . • . • • • . . •• 153 Sub GHz Spectral Filtering and Transmission Modulation by Spectral Hole-Buming and Stark Effect
M. Tschanz, A. Rebane, U.P. Wild, Swiss Federallnstitute ofTechnology Zürich, Switzerland 157
Generation of Huge Tunable Dispersion by Resonant Coupling of Fast and Slow Modes U. Peschel, T. Peschel, F. Lederer, Friedrich-Schiller-Universität Jena, Germany • • . • 161 High-Index Zn:LiTa03 Optical Waveguides Prepared by Nonisovalent-Ion Exchange: The Crystal Structure and Optical Properties
v.A. Fedorov, YU.N. Korkishko, Moscow lnstitute of Electronic Technology, Russia. 165
Directional Coupier Sensor using a Low-Index Fluoropolymer lsolation Layer
B.J. Luff, RD. Harris, J.S. Wilkinson, University of Southampton, UK . . . 169
Wavelength Selective Devices based on the Arrow Scheme
U. Trutschel, V. Delisle, M.A. Duguay, Université Laval, Canada, F. Lederer, Friedrich Schiller Universität Jena, Germany . • . • . . . . . • . . • . . . . • . . . 173 ALinear Waveguide Optical Modulator in the Modulation Range Above 50%
N.M. Lyndin, V.A. Sychugov, B.A. Usievich, General Physics lnstitute, Russia 177
Set of Normalized Scaling Charts for the Optimization of Evanescent Waveguide Sensors
O. Parriaux, P. Sixt, CSEM Swiss Center for Electronics and Microtechnology, Switzerland 181
Analysis of Multilayered and Multisectioned Circular Structures using the Vector-MoL-BPM in Cylindrical Coordinates
E. Ahlers, R Pregla, FemUniversität Hagen, Germany • . • • . . • . • • . . • •• 185 Guided-Wave Measurements of the Optical Nonlinearity of CdS-Doped Silica-Titania Sol-Gel Films
J. Fick, G. Vitrant, Laboratoire d'Electromagnétisme Microondes et Optoélectronique, Grenoble, France, A. Martucci, M. Guglielmi, Università di Padova, ltaly, S. Pelli, G.c. Righini, IROE-CNR, ltaly . • • • . . . • . . . • . . . . . . 189 Elliptic Beam Converters on InP: Design and Experiment
C. Wei, J. Haes, G. Dobbelaere, P. Demeester, RBaets, University of Gent, Belgium, X.J.M.
Leijtens, A.H. de Vreede, M.K. Smit, Delft University ofTechnology, The Netherlands, E.G.
Metaal, PTT Research, The Netherlands • . . . . . • • . • • • • • • • . 193
Simple Polymer Technologies for Multimode Integrated Optics
D. Fischer, D. Ullmann, L. Müller, E. Voges, Universität Dortmund, Germany 197
Low Temperature Fabrication of GeOrdoped Silica Optical Waveguides using Mi-crowave Plasma
H. Moisan, M. Moisan, D. Pavy, F. Le Damany, K. Mehadji, France Telecom CNEr, France 201
Novel RIE-Process for High Quality InP-Based Waveguide Structures
Y.S. Oei, L.H. Spiekman, F.H. Groen, Delft University of Technology, The Netherlands, I.
Moerman, University ofGent-IMEC, Belgium, E.G. Metaal, J.w. Pedersen, PTT Research,
The Netherlands . . • • . • . . . • • . . . . . • . . . • . . • • • • . . . 205 Realisation of an Integrated AII-Optical Non-Linear Mach-Zehnder Interferometer J.B.P. van Schoot, F.e. Blom, H.J.W.M. Hoekstra, A. Driessen, Th.J.A. Popma, University of Twente, The Netherlands . . . . • . . . • . • . • . . . 209
16 Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95)
Optical Switches and Modulators I Chairrnan: A. Carenco
France Telecom-CNET, France 213
Theoretical Investigation of Electro-Optical Switches with Very Low Crosstalk
H.-P. Nolting, M. Gravert, Heinrich-Hertz Institut, Germany . . • • • • • • • • • 213 Integrated Mach-Zehnder InGaAsP BRAQWET Modulators
B. Dwir, R Monnard, A. Sadeghi, l-F. Carlin, M.-A. Dupertuis, A. Rudra, F.K. Reinhart, Swiss FederalInstitute of Technology Lausanne, Switzerland. • • • • . • • • • • •• 217 Diffraction of Optical Guided Waves by Magnetostatic Waves in Inclined Magnetic Field
O.v. Kolokoltsev, Y.A. Gaidai, V.I. Zaets, Kiev University, Ukraine • . • • • . . . •• 221 Low Absorption InPlInGaAs-MQW Phase Shifters for Optical Switching
e.G.M. Vreeburg, M.K. Smit, Delft University of Technology, The Netherlands, M. Bach-mann, R Kyburz, R Krähenbühl, E. Gini, H. Melchior, Swiss Federal Institute ofTechnology Zürich, Switzerland • • • • • • • • • • • • • • • . • • • • • • • • • • • • • •• 225 Rare Earth-Doped Devices I
Chairrnan: D. Ostrowsky
Nice University, France 229
Optical Gain in Erbium-Implanted Ah03 Waveguides
G.N. van den Hoven, E. Snoeks, A. Polman, FOM-Institute for Atomie and Moleeular Physies, The Netherlands, e. van Dam, J.W.M. van Uffelen, M.K. Smit, Delft University of Technology, The Netherlands • • . • • • • . . . . . . . • . • . . . . • . • • •• 229 Anomalously High Uniform Upconversion in an Erbium-Doped Waveguide Amplifier M. Hempstead, J.E. Román, C.c. Ye, J.S. Wilkinson, University of Southampton, UK, P. Camy, P. Laborde, C. Lerminiaux, Coming France, France . • . • • • • • • • . . • 233 Optical Amplification in Cr DitTusion-Doped LiNb03
lM. Almeida, A.P. Leite, Universidade do Porto, Portugal, RM. De La Rue, C.N. Ironside, University of Glasgow. Scotland, F. Caccavale, P. Mazzoldi, Università Degli Studi Di Padova, Italy • • • • • • • • • • • • • • . • • • • • • • • • • • • . • • • • •• 237 Amplification in Erbium Doped Microguides Realised in Phosphate Glass
D. Barbier, P. Gastaldo, J.M. Jouanno, A. Kévorkian, Groupement d'Electromagnétisme Expérimental et d'Optoélectronique, Grenoble, France, B. Hyde, Alpoptics, France • 241 Plenary Session
Chairrnan: N.l. Parsons
GEC-Marconi, UK 245
Integrated Optic DeviceslCircuits for WDM Systems (lnvited)
Re. Alfemess, AT&T Bell Laboratories, USA • . • . • • • . 245 Possibilities of Integrated Opties in Optical Storage (lnvited)
H. Nishihara, Osaka University, Japan. • • • • . 249
Integrated Opties in the Race Program (Invited)
J. Buus, Gay ton Photonics Ltd., United Kingdom . 253
Integrated Opties Research in the Former Soviet Union (Invited)
Proc. 7th Eur. Conf. on Int. Opt. (ECrO '95)
WDM Devices I
Chairman: M.B.J. Diemeer
17
Akzo Nobel Electronic Products, The Netherlands 261 Integrated Opties All Optical Wavelength Converters (Invited)
N. Vodjdani, F. Ratovelomanana, A. Enard, G. Glastre, D. Rondi, R. Blondeau, Thomson-eSF, France, C. Joergersen, S.L. Danielsen, T. Durhuus, B. Mikkelsen, K.E. Stubkjaer, Technical University of Denmark, Denmark . . . • • • . • . • . . . . . • 261
Integrated-Optic Arrayed-Waveguide Grating Multiplexers with Loop-back Optical Paths
Y. Tachikawa, M. Ishii, Y. Inoue, T. Nozawa, NTT Opto-electronics Laboratories, Japan 267
4-Channel Wavelength Flattened Demultiplexer Integrated with Photodetectors
C.A.M. Steenbergen, C. van Dam, T.L.M. Scholtes, A.H. de Vreede, L. Shi, M.K. Smit, Delft University ofTechnology, The Netherlands, P. Demeester, University of Gent, Belgium, J.J.G.M. van der Tol, PTT Research, The Netherlands . . . • . . • . • • . • 271
Novel InP-Based Phased-Array Wavelength Demultiplexer using a Generalized MMI-MZI Configuration
C. van Dam, M.R. Amersfoort, G.M. ten Kate, EP.G.M. van Ham, M.K. Smit, Delft University of Technology, The Netherlands, P.A. Besse, M. Bachmann, H. Melchior, Swiss Federal Institute of Technology Zürich, Switzerland . . . . • • . . • • . • . • 275
Polarization Independent InP Grating Spectrograph for Fiber Optical Links
E. Gini, H. Melchior, Swiss Federal Institute of Technology Zürich, Switzerland 279
Waveguide Technology
Chairman: M. Armenise
Bari University, Italy 283
Strained InPlInGaAs Quantum Weil Layers for Wavelength Demultiplexers
C.G.M. Vreeburg, c.R. de Boer, Y.S. Oei, B.H. Verbeek, EH. Groen, Delft University of Technology, The Netherlands, R.T.H. Rongen, H. Vonk, M.R. Leys, J.H. Wolter, COBRA Interuniversity Research Institute, The Netherlands, J.J.G.M. van der Tol, PTT Research, The Netherlands • . • • . . . • . . . • • . • • • • . • 283
Variation of Passive Waveguide Birefringence with Axial Strain
H. Bissessur, P. Pagnod, B. Martin, G. Ripoche, E Gaborit, Alcatel-Alsthom Recherche, France • . • • • . • . . • . . . • . • • . . . • . . . . • . • . . • . 287
Oxidized Porous Silicon Based Waveguide for Optical Interconnections
V.P. Bondarenko, A.M. Dorofeev, N.M. Kazuchits, Belarusian State University of Infor-matics & Radioelectronics, Republic Belarus . . . • • . • . • • . . . . • . 291
Antiresonant Reftecting Optical Waveguides in KTiOP04
1. GeWer, A. Bräuer, Ch. Wächter, W. Karthe, Fraunhofer Institutionfor Applied Optics and Precision Engineering, Germany, M. Rottschalk, A. Raseh, Friedrich-Schiller-University Jena, Germany • • . • . • . . . • . • . • • . . . • . . . . • . . . • • 295
Low Temperature, Nitrogen Doped Silica Waveguides on Silicon with Small Core Dimensions Fabricated by PECVD/RIE
M. Hoffmann, E. Voges, Universität Dortmund, Germany . . . •• 299
Refractive Index Relaxation in PECVD- and LPCVD-SiON-Waveguides on Silicon Substrates
1. Müller, U.-P. Dahms, M. Mahnke, S. Wunderlich, Technical University Hamburg-Harburg, Germany • . . . • . . . • . . • . . . • . . . 303
18 Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95) Passive Components
Chairman: E. Voges
Dortmund University, Germany 309 Prospects for Silica and Glass-Based 10 Components (Invited)
S. Kobayashi, F. Kiger, M. Meyers, A. Speetor, Photonic Integration Research Inc., USA 309
High Sidelobe Suppression Ratio in a Directional Coupier Optical Filter
S. François, M. Filoche, F. Huet, S. Fouehet, G. Hervé-Gruyer, A. Ougazzaden, J. Brandon, N. Bouadma, M. Carré, A. Careneo, France Telecom CNEr, France. • • . • . . . •. 315 Efficient Short Passive Polarization Converter
J.J.G.M. van der Tol, J.w. Pedersen, E.G. Metaal, PTT Research, the Netherlands, Y.S.
Oei, F.H. Groen, Delft University of Technology, the Netherlands, !. Moerman, University ofGent-IMEC, Belgium • • • • • • • • • . . • . . • . • • • • • • • • • • • •. 319 A Very Compact InP-Based Integrated Optie Maeh-Zehnder Interferometer with a Delay Differenee of 74 ps
RBaets, C. Wei, G. Dobbelaere, J. Haes, O. van Hoorebeeke, T. Tanghe, P. De Dobbelaere, I. Moerman, University of Gent-IMEC, Belgium, X.J.M. Leijtens, A.H. de Vreede, M.K. Smit, Delft University of Technology, The Netherlands, E.G. Metaal, PTT Research, The Netherlands . • • . . . • . . . • . . • . • • • . . • • . . . 323 Optical Mode-Combiners based on Planar Multi-Mode Interferenee Coupiers in In-GaAsPlIoP
R Hess, J. Leuthold, P.A. Besse, H. Melchior, Swiss Federallnstitute ofTechnology Zürich, Switzerland. . • • . • • • . . • . • • . . . . • . . . . • . . • . • . • • . •. 327 Adiabatie 3 dB-Coupler Realized on InGaAsPlInP
J.w. Pedersen, J.J.G.M. van der Tol, E.G. Metaal, PTT Research, The Netherlands, Y.S.
Oei, F.H. Groen, Delft University of Technology, The Netherlands, P. Demeester, University of Gent-IMEC, Belgium • . • . . • . . . • • . • • • • • . • . • " 331
Nonlinear Deviees Chairman: RM. De La Rue
Glasgow University, UK 335
Cascading of 2nd Order Nonlinear Processes in Waveguides (Invited)
G.!. Stegeman, W. Torruellas, M. Sundheimer, D. Kim, G. Krijnen, Y. Baek, C. Trevifio-Palacios, E. VanStryland, CREOL, University of Central Florida, USA, R Sehiek, Lehrstuhl für Technische Elektrophysik München, Germany, G. Assanto, University of Roma lIl,
Italy, L. Tomer, Polytechnic University of Catalonia, Spain, C. Menyuk, University of Maryland, USA, J.D. Bierlein, E.I. duPont de Nemours, USA, W. Sohler, Universität-Gesamthochschule-Paderbom, Germany, P. Vidakovie, J. Zyss, CNEr, France . • • •• 335 Cascaded Nonlinearity in Lithium Niobate Waveguides
R Sehiek, Y. Baek, D.Y. Kim, M.L. Sundheimer, G.!. Stegeman, CREOL, University of Central Florida, USA . . • . . . • . . . • . . . . • . . . . •• 339 Quasi-Phase-Matehed Parametrie Fluoreseenee in Room Temperature Lithium Tan-talate Waveguides
P. Baldi, S. Nouh, K. El Hadi, M.P. De Mieheli, D.B. Ostrowsky, Université de Nice-Sophia Antipolis, France, D. Delaeourt, M. Papuehon, Thomson-CSF/LCR, France . • • • " 343
Nonlinear Properties of Disordered GaAs! AlGaAs MQ W struetures at 1.55 JLm
c.J. Harnilton, J.S. Aitehison, University of Glasgow, Scotland, G.T. Kennedy, W. Sibbett,
University of St. Andrews, Scotland • . . . • • . . . • • . . . • . • • . •. 347 Giant Optical Nonlinearity in Waveguiding Amorphous Superlattiees
Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95)
Solition Switching in a Mach-Zehnder Device via Cascading of Second-Order Nonlin-earities
A. Laureti-Palma, S. Trillo, Fondazione Ugo Bordoni, Italy, G. Assanto, Terza University of Rome, Italy. • . • . . • . . . • • . . • . . . • . • • . • . • • • • . • . • •
Poster Presentations
Fluorescence Lüetime Optimisation of a Low Threshold, High Effeciency, Proton Exchanged Waveguide Laser in Nd:LiTa03
S. Nouh, P. Baldi, K. El Hadi, M.P. De Micheli, G. Monnom, D.B. Ostrowsky, Université de Nice-Sophia Antipolis, France, E. Lallier, M. Papuchon, Thomson-CSFILCR, France • Control of Proton Exchange for LiTa03 Waveguides and Crystal Structure of H.Li! .• Ta03
K. El Hadi, P. Baldi, S. Nouh, M.P. De Micheli, A. Leycuras, Université de Nice-SophiaAn-tipolis, France, VA. Fedorov, YU.N. Korkishko, Mascaw /nstitute of Electronic Technolgy, Russia • . . • . • . . . • . . . • • Analysis of NonIinear Waveguides in the Time Domain
D. Schultz, M. Pohl, E. Voges, Universität Dortmund, Germany . • . . . . Si02-Ti02 Rib Waveguides for Electrostatically Actuated 10 Nanomechanical Devices R. Dangel, W. Lukosz, Swiss Federalinstitute of Technology Zürich, Switzerland • . • • Experimental and Theoretical Study of the Switching Response of Semiconductor Optical Amplifiers
H. Soto Ortiz, D. Erasme, Ecale Nationale Supérieure des Télécommunications, France, P. Doussiere, Alcatel Alsthom Recherche, France • . . . • • • . . .
Development of an Integrated Optical Current Sensor for Large AC Current Sensing
V. Minier, A. Danel, D. Persegol, A. Kévorkian, Groupement d'Electromagnétisme Expérimental et d'Optoélectronique, Grenoble, France . . • • . . • . . • • • • ••
Integrated-Optical Blue Light Displacement Sensor in KTiOP04
1.-P. Ruske, M. Rottschalk, B. Unterschütz, Friedrich-Schiller-University Jena, Germany MMP Analysis of Very Short Doubly Perturbed Waveguide Structures
D. Erni, Swiss Federal/nstitute af Technology Zürich, Switzerland Design of Achromatic Lenses for Integrated Optics
M.A. Forastiere, G.c. Righini,/ROE-CNR, /taly . . . . • . . • . . . • . • • Reverse Exchange in the Annealed Proton Exchanged LiNb03 Structures for Buried
Waveguides
Yu.N. Korkishko, V.A. Fedorov, S. V Katin, A. V Kondrat' ev, Moscow Institute of Electronic Technalogy, Russia . . . • • . . . • • . . . . • . . . • . . Mode Expansion Simulation ofVertical Tapers in InP: Comparison with Experimental Results and Optimisation
1. Haes,l. Moerman, P. Demeester, R. Baets, University af Gent, Belgium • . . . • • • Thermo-optical Digital Switches on Silicon
M. Hoffmann, E. Voges, Universität Dortmund, Germany . . • . . • . . . • • . . .
Simulation of Semiconductor Optical Amplifiers
S. Mottet, T. Mercier, France Telecom CNEr, France, J.L. Pleumeekers, Delft University of Technology, The Netherlands . . . • . • . . . • • . . • . • . . . • . . High-Concentration Erbium-Doped Silica-on-Silicon Grown by Plasma-Enhanced CVD
B. Pedersen, R. Kromann, NKT Research Center; Denmark, T. Feuchter, M.R. Poulsen, J.E. Pedersen, M. Kristensen, Technical University af Denmark, Denmark . . . • . • . . •
19
355
359 359 363 367 371 375 379 383 387 391 395 399 403 407 411? ! , ! " ! , ! , . ,
20
;;;;wa . . . - -____ -M~-
--_
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_
...Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95) Arrow Directional Coupier with OpticaUy Induced Grating
E. Weinert-Rl\czka, Technical University of Szczecin, Poland, W. Biehlig, F. Lederer,
Friedrich-Schiller-University, Germany . . • . • . . . • • . • • •. 415 Waveguide Grating Coupling onder Normal Incidence: a Clarification
V.A. Sychugov, A.V. Tishchenko, General Physics Institute, Russia, O. Parriaux, CSEM
Swiss Center for Electronics and Microtechnology, Switzerland. • • . • • • • . • •• 419 Experimental Characterization of Magnetooptic Waveguides for Integrated Optical Applications
A. Erdmann, M. Wallenhorst, H. Dötsch, Universität Osnabrück, Germany, H.J. Tessmann,
Deutsche Telekom, Germany • • • • • . • . . • . . . • . • . . • • . . . •• 423 Second Harmonie Generation in a Resonantly Absorbing Medium
I.V. Mel'nikov, General Physics Institute, Russian Federation, P.G. Kazansky, P.StJ. Rus-sell, University of Southampton, UK. • • . • • . • . • • • • • • • • • • • • • •• 427 Design and Performance Evaluation of Multi-Mode Interference Power Splitters for Optical Communications
T. Rasmussen, J. Hedegaard Povlsen, Technical University of Denmark, Denmark . • • 431 Analytically Optimized Aplanatic Homogeneous Waveguide Lenses in Glass and
LiNb03
B.G. Pantchev, Z. Nikolov, I.T. Savatinova, Institute of Solid State Physics, Bulgaria 435
Sensors and Microsystems Chairman: S. Valette
LETI, France 439
10 Biochemical Sensors (Invited)
Ch. Fattinger, Hoffmann La Roche, Switzerland. . . • . . . . • • • • . . . 439 A High-Precision, Compact, Hybrid Optical Evanescent Wave Sensor for Chemical and Biological Applications
H. Helmers, P. Gréco, G. Bouvier, P. Benech, Institut National Polytechnique de Grenoble,
France, R. Rustad, Norwegian Institute ofTechnology, Norway, R. Kherrat, Ecole Centrale
Lyon, France . • • . • • • • .. . • • • . . • . • • . • • • • . • • • • . . • •• 445 Waveguide Surface Plasmon Resonance Biosensor for the Aqueous Environment
R.D. Harris, B.J. Luff, J.S. Wilkinson, University of Southampton, UK, R. Wilson, D.J. Schiffrin, University of Liverpool, UK • . • • . • . . • . • . . . . . • • 449 Low Cost Polymer-Optical Ammonia Sensor
R. Wiesmann, L. Müller, R. Klein, A. Neyer, Universität Dortmund, Germany 453
Modelling and Design Methods Chairman: J. Ctyroky
IREE, Czech Republic 457
Modelling Methods for Integrated Opties (lnvited)
C.G. Someda, A.D. Capobianco, Università di Padova, Italy, P. Bassi, Università di Bologna 457 CAD-Tooi for Integrated Opties
X.l.M. Leijtens, L.H. Spiekman, C. van Dam, L.C.N. de Vreede, M.K. Smit, J.L. Tauritz,
Delft University of Technology, The Netherlands • . . . . . • . . . . • . • • 463 Accelerated Algorithm for Vectorial Beam Propagation
D. Li, H. van Brug, H.l. Frankena, Delft University of Technology, the Netherlands 467
Modal Analysis of Circularly Curved Ridge Waveguides; A Full-Vectorial Source-Type
IntegraI Equation Approach
H.J.M. Bastiaansen, PTT Research, The Netherlands, H. Blok, Delft University of
" ; ... i-Ww; ! ..ti .. I t . Int. ! ! t !!! • j I j • • ! .k.IM' .. ' . . . . ! 11 I I U I I . ' IJIJ 11 IIW
Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95) Applications of Integrated Optics
Chairman: B.H. Verbeek
21
Philips Optoelectronics Centre, The Netherlands 475
Technology and Applications of Commercial LiNb03 Integrated Optic Devices (Invited)
F.I. Leonberger, S.w. Merrit, United Technologies Photonics, lnc., USA . • • • . . " 475 System Requirements and Opportunities for Lossless Integrated Active Splitters
AM.I. Koonen, EW. Willems,AT &T Network Systems, The Netherlands, R. Ries, Deutsche Telekom, Germany, e. Lerrniniaux, Corning Europe [ne. . . . 479 Environmental Reliability of Polymer Waveguide Devices
A. Rogner, H. Panhoff, microParts, Germany . . . . . 483 Fully Packaged, Integrated Optical, Acoustically TImable Add-Drop-Multiplexers in LiNb03
E Wehrrnann, Ch. Harizi, H. Herrmann, U. Rust, W. Sohler, S. Westenhöfer, Universität-GH-Paderborn, Germany • • • . . . • . . • . . . • 487 Microspectrometersystem Based on Integrated Optic Components in Polymers as Spectral Detection System for the VIS- and NIR Range
e. Müller, O. Frornhein, J. Göttert, T. Kühner, J. Mohr, Forschungszentrum Karlsruhe, Germany • • . • • • . • • . . . • . . . 491 Low Voltage, Polarization-Independent LiNb03 Modulators
E.I. Murphy, T.O. Murphy, R.W. Irvin, AT&T Beil Laboratories, USA. 495 WDM Devices 11
Chairman: Re. A1femess
AT&T Beil Laboratories, USA 499
WDM Devices in InPlInGaAsP (Invited)
M.R Amersfoort, Beilcore, USA, M.K. Srnit, Delft University of Technology, The Nether-lands • • . . • . • . . • . . . • . . . • • • • . • . 499 Optical Phased Array in SiOJSi with Adaptable Center Wavelength
P.e. Clemens, G. Heise, R März, H. Michel, A. Reichelt, H.W. Schneider, Siemens AG Research Laboratories, Germany • • . . . • . • • . . . . . 505 Pass band Collisions and Multi-Channel Crosstalk in Acousto-Optic Filters and Switches
D.A. Srnith, RS. Chakravarthy, L. Troilo, Case Western Reserve University, USA, A d' A1essandro, Università degli Studi "La Sapienza ", ltaly • . . . • . • • . . 509 Asymmetric Y-junction Wavelength Demultiplexer in Ti:LiNb03, Using a Segmented
Waveguide Branch
Z. Weissman, D. Nir, D. Brooks, S. Ruschin, A Hardy, Tel-Aviv University,lsrael • •• 513 Flattened Response Ensures Polarization Independence of InGaAsPlInP Phased Array Wavelength Demultiplexer
L.H. Spiekman, AH. de Vreede, EP.G.M. van Ham, A. Kuntze, M.K. Srnit, Delft University ofTechnology, The Netherlands, J.J.G.M. van der Tol, PTT Research, The Netherlands, P. Demeester, University of Gent, Belgium . • . . . • . • • . . • • . • . • . . . . • 517 Bandwith Optimization of AddIDrop Filters Using a Cascaded Coupier Mach-Zehnder Configuration
22 Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95) Optical Switches and Modulators 11
Chairman: EJ. Leonberger
United Technologies Photonics, USA
Advanced Optical Switching Devices (Invited) J.E. Zucker, AT&T BeU Laboratories, USA • .•
Selective Area Growth of Q/Q-MQW Structures for ActiveIPassive 2x2 Space Switch Matrices
G. Laube, M. Schilling, E. Lach, K. Daub, D. Baums, W. Idler, 1. Weber, A. Nowitzki, U. 525 525
Körner, K. Wünstel, Alcatel SEL, Germany . • . . . • . . • • • • • . . • • 527 1:8 Optical Matrix Switch on InPlInGaAsP with Integrated Mode Transformers
L. StoII, J. Eichinger, J. Müller, R Müller-Nawrath, M. Schienle, B. Acklin, G. Müller,
Siemens, Germany • • . • • . • . . • . . . • . . . . • • • . . . • 531 A Mach-Zehnder Interferometric Switch with a 0.2 V.mm Voltage Length Product
J.E.M. Haverkort, X. Leijtens, G.w. Yoffe, E Karouta, 1. Brubach, T. Eijkemans, L.M.E Kaufmann, M.K. Smit, J.A.A. Stegemann, Y.e. Zhu, J.H. Wolter, COBRA lnteruniversity Research lnstitute, The Netherlands . . . . • . • • • • . • • • • • • • • . • • •. 535 A 1.31Lm LiNb03:Ti Reftective Modulator, Hybridised with a Photoreceiver, for Bidi-rectional Full-Duplex Transmission
e. Ramus, E Huet, J. Saulnier, e. Gibassier, J. Abiven, S. Durel, France Telecom/CNEr, France . • • . • • . • • • • • . • • . • .
Photonic Bandgap and Active Grating Devices Chairman: RBaets
539
Gent University, Belgium 543
From Microcavities to Photonic Bandgaps (Invited)
R Stanley, M. lIegems, Ecole Polytechnique Federale Lausanne, Switzerland • . . •• 543 Optical Filters from Photonic Band Gap Air-bridges
1.e. Chen, H.A. Haus, S. Fan, 1.D. Joannopoulos, Massachusetts lnstitute of Technology, USA. • • • • • • • • • . • . . • • • • • . • . • • . • • • . • • . • • • • . • 549 Circular Grating Surface-Emitting Lasers with Combined First and Second Order Gratings
N. Eriksson, K.-J. Killius, M. Hagberg, A. Larsson, Chalmers University of Technology,
Sweden . • • • • • • • . . • . • • . • • . . . • . • . . . • • • . • • 553 DFB Laser Arrays Realized in One Holographic Exposure
A. TaIneau, J.P. Chandouineau, 1. Charil, A. Ougazzaden, France Telecom CNEr, France 557
A Surf ace Grating Distributed Feedback GaAslAIGaAs Laser with Variabie Width Waveguide for Single Mode Operation
H. Abe, S.G. Ayling, J.H. Marsh, RM. De La Rue, Glasgow University, Scotland 561
Rare Earth-Doped Devices 11 Chairman: W. Sohler
Paderbom University, Germany 565
Erbium-Doped Integrated Lasers and Amplifiers (Invited)
H. Suche, University of Paderbom, Germany. • . . . . • . . • . . . . • . • • . . 565 Integrated DBR Laser in Erbium-Diffusion-Doped LiNb03
R GroB, I. Baumann, W. Sohler, Universität-GH-Paderbom, Germany, J. Söchtig, H.
Schütz, R Widmer, Paul-Scherrer-Institut, Switzerland • . • • • . • • • • • • . 571 Multiple Function Waveguide Laser in Nd-DitTused Ti:LiNb03
Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95) 23 Distributed Feedback Lasers in Rare Earth-Doped Phosphate Glass
D.L. Veasey, KJ. Malone, J.A. Aust, N.A. Sanford, A. Roshko, National lnstitute of
Standards and Technology, USA . . . . . . . • • . • . • . . . 579 Hybridization and Packaging Technologies
Chairrnan: K. GroBkopf
lOT, Germany 583
Packaging and Reliability of 10 in Glass (Invited)
R. Fuest, lOT lntegrated Opties, Germany . . . . . . . . . • 583 Packaging and Reliability of Active Integrated Optical Components (lnvited)
A. O'Donnell, lntegrated Optical Components Ltd, United Kingdom . . . . . • 585 An Optical Transceiver on a Silicon Motherboard
C. Jones, M. Nield, K. Cooper, R. Walier, J. Rush, P. Fiddyment, J. Collins, BT Laboratories,
UK . . . • • . . . • . . . . • . . . . . . . • . . . • . • . 591 Surface Normal Cascaded Planar Interconnection with Easy Alignment
S. Kakizaki, P. Roran, Hitachi Dublin Laboratory, lreland • . • • . . • . . 595
TuPI Plenary Opening Session
Optical Communication
---Today and
Tomorrow---Tetsuhiko IKEGAMI
Nippon Telegraph and Telephone Corp. Morinosato, Atsugi-shi, Kanagawa 243-01, Japan
Tel: +81-3-3509-240 1 E·mail: [email protected]
, I
25
The impact of Optical Communication on society becomes bigger and bigger with time than we expected. Concurrently, environment of telecommunication has been changing drastically in the 90's. People recognizes that the telecommunication will be a powerful tooi to make solutions for many issues in the real world and the status grades up to social infrastructure like NU or GIl. Moreover, an idea of Multi-media service depicts bright future with the infrastructure. The definition of Multi-media is still in open discussion, however, the term encourage people who has been or is exploring new services other than Plain Old Telephone Services(POTS) and also encourage service providers who are trying demonstration of emerging services on test-beds. Cellular phone becomes popular and INTERNET changes from acadernia to public. News on disaster by earthquake in Kobe, Japan was delivered by MOSAIC and through INTERNET around the world. Under the circumstances, the paper will review Optical Communication, Today, and will touch upon the trend and technological road-map of Optical Communication towards Tomorrow.
1. Telecommunication Environment in Chaos and Transition
"Technology-oriented" to "Telecommunication" to
" Service/Customer-oriented"
" Social Infrastructure"; National/Global Information Infrastructure Motive Force; Globalization and Multi-national in Business sectors
LocaI Area Network (Computer networking), Merging of Teleco and CA1V PC networking, INTERNET from Acadernia to Public
Multi-media
Mitigation of StructuraI Social Issues
2. Supporting Technologies
Terrninal; Personal Computer(PC) and Software Access; Fiber, Cellular, Satellite, Cox, Copper Pair
Core Network; Flexible networking(ATM), Intelligent Network(IN), Seamless Network and Open
3. Optical Communication Technology
Optical Access Network; Fiber-to-the-home(NTT) or others
"Point to point" to "Networking"; Multi-wavelength networking(ACTS)
4. Technologies supporting Multi·media Era
Bit-greedy; More Memory, Higher-speed Transmission and Routing/Switching Higher-speed digitaI signa! processing(DSP)
Low power devices, Cheap Price
26
Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95) TuPITuPI Plenary Opening Session
Prospects for Integrated Opties in
Telecom Applieations
Marko Erman Alcatel Aisthom Recherche
Route de Nozay,
91460
Marcoussis, FranceTel:
33 1 6449 19
25, Fax:33 1 69 01 70 93
Abstract
:
The changina world of telecommunications, with on one hand a wider penetration of photonics, and the exploitation of wavelength multiplexing
on the other ~and, opens perspectives for integrated opties devices.
Key application areas, related devices and technologies are discussed.
1/
Introduction :
trends
in
opticaI communications
Due to its acknowledged superior qualities as transmission medium, the optica I fiber has introduced photonics into the telecommunication network and has initiated a rapid evolution of telecommunication technologies. Several factors are also favouring the dep-Ioyment of photonic technologies. The commercial availability of high performance reliable Er doped fiber based amplifiers is allowing on one tiand to bridge considerable distances without converting optica I signals back to electronics, and on other hand is allowing to compensate the losses due to large spliJting ratios, making thus possible the distribution of optical signais. CATV . to a large number of customers. Together with the reduction of the cost of optoelectronics devices this will facilitate a further deployment of the optica I ether, and the introduction of economically via bie fiber to the curb (FTTCI and fiber to the home (FTTH) systems. Additionally, the peculiar possibilities of photonics through the use of wavelength multiplexing are now envisaged as very promising future network options.
All these changes represent a number of opportunities and challenges to photonic devices in genera!, and to integrated optie devices in particular.
2/
MotiYation
lor
integt aled opIics clevices in Telecom
Looking to the functionality of an optoelectronic device, one can note that a number of devices actually performs simultaneously several functions. Let us consider a simple DFB laser diode : the emission and the modulation functions are both combined in one single device. This has a large number of advantages because of the simplicity of the device realisation and control. However, the multifunctionality of a device generally results in trade off between the various
~
arameters. Considering again the laser, the modulation induces wavelength chirp 1]. As the bitrate increases, the value of the chirp, even in an optimised DFB aser is too large for standard fibers. One solution to overcome the limitation is toseparate the emission and the modulation functions. This is do ne by using a CW
laser souree, combined with on intensity modulator. Such a combination can be
done using discrete components (LD and liNb03 modulator for instanee). This
combination, compared to standard directly modulated laser diode exhibits a much better performance, but inevitably is higher cost. The cost con be reduced, while
28 Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95) TuPI
still keeping the performance advantage by increasing the· degree of integration.
In the particular case we are discussing, monolithic intearation of a laser and the modulator (electro-obsorption) is the practical solution [2J.
Cl U C
•
~~
:.
discrete muhifunclionol deviceFigur. 1.1.:
Rational for Integrated Opties Devices :• The performance of a discrete mukifunctional device can be
improved
bv
a more complexassembly of discrete, functionally dedicatèd devices, but at the expense of the cost
• The cost, and eventually the
performance can
be
improved byusing integrated opties device
This sequence, illustrated schematically on Figure 1, and the motivation behind (trade off of performance and cost) applies to a number of other examples mentioned below. It is however not a genera I rule that monolithic integration overpasses • cost and rerformance wise . hybrid options. This is very much depending on the overal device and technology complexity.
3/
AppIication
araas
lor
lnIegial8d
Opties
A schematic representation of the B-ISDN network is a layered network as depicted in Figure 2 [3]. At present, optical fibers are used for transmission (rates can range from STM 1 to STM 64) as weil as in some cases for the distribution, i.e. the access layer (today mostly analog TV distribution). Submarine links, are
0150 all fibers based and typical bitrates range from 622 Mb/s to 5 Gb/s.
CPN
TRANSMISSION NETWORK (PDH/SDH)
High Quallty Video VIdeoconference & PABX High Speed Data LAN
TuPI Plenary Opening Session
Although the today applications of integrated opties devices within the network are limited, the evolution opens new possibilities.
3. 1./ Access
The major motivation for introducing integrated opties devices within the access area might be the further penetration of the fiber closer to the private customers, together with the introduction of interactive services [4]. Wide dissemination of photonic technologies will put strong constraints on the cost. The interactive services require bidirectional communications, and thus need devices that can emit and receive (transceivers). One simple approach is to use a single electrode laser diode for both the emission and the detection function
[5].
This can be done however only in half-duplex mode. The full duplex mode needs a dedicated laser, a separate detector and a wavelength discriminating element. Devices derived from multisection DBR lasers are one option to achieve such a fundionalityf61.
The wavelength discrimination function is given by the absorption edge of theII-V
semiconductor. This somehow limits the wavelength allocation scheme. More genera
I
approach for the full duplex transceivers is to use wavelength demultiplexer (i.e. a duplexer) for the wavelength discriminator . Such a transceiver can be fabricated using various technological options, ronging from bulk optics micro-mechanic assem blies, to integrated opties devices which could either rely on hybrid assem blies of passive (Si02/Si) duplexer and optoelectronic elementsr7],
or could use monolithic integration on InP[8].
At present, the first option still shows superior performance. However, the pressure on co st reduction and large volume gives a high chance to integrated optie solutions. The level of monolitnic integration which will give the performance/cost trade off is however not yet clearly identified and will strongly depend on the manufacturability aspects.3.2./ Transport
The motivation for integrated opties in the transport layer is coming from a continuous trend to improve the performance: capacity increase and increase of the transmission distance (i.e. repeater spacing). It is interesting to note for instance that the capacity of submarine links has been roughly multiplied by
10
every
10
years, which is rule very similar to empirie Moore law followed by in Si ICs IAs already mentioned in §2, the high speed (~1 0 Gb/s) TOM transmission require use of integrated laser modulator. This wiJf be probably one of the very first monolithically integrated InP optie devices used in commercial systems. A more complex laser modulator device could be the replacement of the electro-absorption modulator by a Mach-lehnder modulator, which brings additional advantages (varia bie chirp, higher saturation power).
Also the detector can benefit from the integrated optics technology. For instance, it was demonstrated that the combinotion of semiconductor optica I amplifier and PIN detector can improve the receiver sensitivity by more than 15 dB ot 10 Gb/s [9]. This combination can be done using discrete components. However, monolithic options have been envisaged too
[10].
30 Proc. 7th Eur. Conf. on Int. Opt. (ECIO '95) TuPI
Optica I time multiplexing (OTDM) is also envisaged to achieve ultra-high bitrate
(40 - 100
Gb/s) systems[11].
The transmitter for such systems (for instanceNx
10
Gb/s OTDM) comprises a short pulse generator at10
GHz, N delay lines, N modulators at10
Gb/s and a combiner. Several sub-ports of such transmitter have been already demonstrated using integrated optie devices. For example mode locked losers for the pulse generatorn
2], and InP integrated device induding the delay lines, the modulators and the combiner [13]. Similar device has tobe
used also for the signal demultiplexing.An other alternative to increase the capacity, is to use wavelength multiplexing (WDM). The key devices for WDM transmission are the multiwavelength transmitters and the multiwavelength receivers. Important efforts are spent worldwide to demonstrate integrated solutions. On the transmitters side, the first level of integration concerns laser arrays, which con be combined with Si02/Si passive waveguides, and namely the passive combiner, using the Si mother board concept
[14].
The passive combiner itself can be integrated with the laser diodes [151. Similor approaches have been followed at the receiver J)art where Si02/Si demultiplexers have been hybridized with detectors arrays [16] and also monolithic multiwavelength receivers demonstrated [17].3.3.1 Transparent WDM Networks
The use of WDM for capocity increase is
by
far not the only motivation. In foet, the additional flexibility given by the WDM networks Iposslbility to use WDM for routing) might weil be the real advantage. To exploit these unique features of photonic, a number of proposals for the so called "transparent WDM networks" have emerged during recent years [18]. A generic structure of such network is represented on figure 3. The functionality of such network is achieved using the concept of transparent node, where the node function is to route the wavelength channels. This function con be more or less complex: it con be restricted to passive wavelength routing, or it con allow, for each channel, 0 complete wavelength and space reanocationn
9]. A schematic representation of 0 node that hos the complete functionality is aepicted on figure 4.Figure 3 :
Schematic representation of WDM011
optical networkSpoce F.1Ie Wovelength Switch I r converter
•
The optical cross-connect hos the potential for a number of integrated optical devices which include space switches
