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SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G, SURHD8560T4G-VF01 Power Rectifier

Features and Benefits

• Ultrafast 30 Nanosecond Recovery Times

175 °C Operating Junction Temperature

• High Temperature Glass Passivated Junction

• High Voltage Capability to 600 Volts

• SURHD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Power Supplies

• Inverters

• Free Wheeling Diodes Mechanical Characteristics

• Case: Epoxy, Molded

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 0.4 g (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260 °C Max. for 10 Seconds

• ESD Ratings:

♦ Machine Model = C (> 400 V)

♦ Human Body Model = 3B (> 8000 V)

Device Package Shipping

ORDERING INFORMATION

MURHD560T4G DPAK

(Pb−Free) DPAK CASE 369C STYLES 3, 8

2,500 / Tape & Reel

ULTRAFAST RECTIFIER 5.0 AMPERES

600 VOLTS

4

MARKING DIAGRAMS www.onsemi.com

UH560 = MURHD560T4 560W1 = MURHD560W1T4 A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package AYWW

UH560G 1

3

AYWW 560W1G

STYLE 3 STYLE 8

4 1

3

STYLE 3 STYLE 8

* The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package bottom (molding ejecter

pin), the front side assembly code may be blank.

(2)

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

V

RRM

V

RWM

V

R

600 V

Average Rectified Forward Current

(Rated V

R

, T

C

= 159°C) I

F(AV)

5.0 A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) I

FSM

50 A

Operating Junction and Storage Temperature Range T

J

, T

stg

−65 to +175 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Maximum Thermal Resistance, Junction to Case R

qJC

2.5 °C/W

Maximum Thermal Resistance, Junction to Ambient (Note 1) R

qJA

49.5 °C/W

1. Rating applies when surface mounted on a 1.5 mm FR4 PC board with a 1 oz. thick, 700 mm

2

Cu area.

ELECTRICAL CHARACTERISTICS

Rating Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 2) (I

F

= 5.0 Amps, T

C

= 25°C)

(I

F

= 5.0 Amps, T

C

= 125°C)

V

F

1.65 2.7

V

Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, T

C

= 25°C)

(Rated dc Voltage, T

C

= 125°C)

I

R

10 70

mA

Maximum Reverse Recovery Time

(I

F

= 1.0 Amp, di/dt = 50 Amps/ms, V

R

= 30 V, T

J

= 25°C) t

rr

30 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

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I

R

, REVERSE CURRENT (AMPS) I

F

, FOR W ARD CURRENT (AMPS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 0

V

F

, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10

1

600 0

V

R

, REVERSE VOLTAGE (VOLTS) 1.0E−4

1.0E−6

1.0E−7

1.0E−9

0.01 0.5 1.5 3.0

100 200 300

125°C 150°C

25°C

125°C

25°C 2.0 1.0

100

1.0E−5

1.0E−8

400 150°C

I

R

, MAXIMUM REVERSE CURRENT (AMPS)

V

R

, REVERSE VOLTAGE (VOLTS) 100°C

500 100°C

600 0

1.0E−3

1.0E−5

1.0E−6

1.0E−8

100 200 300

125°C

25°C 1.0E−4

1.0E−7

400 150°C

500 100°C

0.1

2.5

I

F

, FOR W ARD CURRENT (AMPS) 0

V

F

, MAXIMUM FORWARD VOLTAGE (VOLTS) 10

1

0.01 1.0 3.0 6.0

125°C 150°C

25°C

4.0 2.0

100

100°C

0.1

5.0

ATION

SQUARE WAVE

100 20

60 70 80

90 T

J

= 175°C

15

(4)

I

F

, A VERAGE FOR W ARD CURRENT (AMPS)

120 150

100

T

C

, CASE TEMPERATURE (°C) 9

5

0 130 160 170 180

SQUARE WAVE dc

110 140

Figure 7. Current Derating 8

4 7

3 6

2 1

R

qJC

= 2.5°C/W T

J

= 175°C

10 10

t

p

, SQUARE WAVE PULSE DURATION ( ms) Figure 8. Typical Non−Repetitive Surge

Current

I

100 10,000

, NON-REPETITIVE SURGE CURRENT (A) FSM

1,000 1,000

10,000

* Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table.

100

R

(t)

, TRANSIENT THERMAL RESIST ANCE

Figure 9. Thermal Response, Junction to Case

1000 0.1

0.000001

t, TIME (s) 10

1

0.1

0.0001 0.001 0.01 1.0 10

0.01

Single Pulse 0.5

0.2 0.1 0.05 0.01

0.00001 100

P

(pk)

t

1

t

2

DUTY CYCLE, D = t

1

/t

2

R

(t)

, TRANSIENT THERMAL RESIST ANCE

Figure 10. Thermal Response, Junction to Ambient

1000 0.1

0.000001

t, TIME (s) 100

1

0.1

0.0001 0.001 0.01 1.0 10

0.01

Single Pulse 0.5

0.2 0.1 0.05

0.01

0.00001 100

P

(pk)

t

1

t

2

DUTY CYCLE, D = t

1

/t

2

10

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PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE) CASE 369C

ISSUE F

STYLE 3:

PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8:

PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE

5.80 0.228

2.58 0.102

1.60 0.063 6.20

0.244

3.00 0.118

6.17 0.243

ǒ

inchesmm

Ǔ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

b D E

b3

L3

L4 b2

0.005 (0.13)

M

C

c2 A

c

C

Z

DIM MININCHESMAX MILLIMETERSMIN MAX

D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 A 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61

e 0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L 0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z 0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

7. OPTIONAL MOLD FEATURE.

1 2 3

4

H 0.370 0.410 9.40 10.41 A1 0.000 0.005 0.00 0.13

L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC

A1

H

DETAIL A

SEATING PLANE

A

B

C

L1 L

H L2

GAUGEPLANE

DETAIL A

ROTATED 90 CW5

e BOTTOM VIEW

Z

BOTTOM VIEW SIDE VIEW

TOP VIEW

ALTERNATE CONSTRUCTIONS NOTE 7

Z

Cytaty

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