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, O ne,

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

BUX10

HIGH POWER NPN SILICON TRANSISTOR

. SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR

. HIGH CURRENT CAPABILITY . FAST SWITCHING SPEED

APPLICATIONS . MOTOR CONTROL

. LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

DESCRIPTION

The BUX10 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.

INTERNAL SCHEMATIC DIAGRAM I T A B ' i

ABSOLUTE MAXIMUM RATINGS

Symbol VCBO VCEX VCEO VEBO Ic ICM

IB Plot Tstg Tj

Parameter Collector-base Voltage (IE = 0)

Collector-emitter Voltage (VBE = - 1.5V) Collector-emitter Voltage (le = 0) Emitter-base Voltage (Ic = 0) Collector Current

Collector Peak Current (tp = 10 rns) Base Current

Total Power Dissipation at Tcase < 25 °C Storage Temperature

Max Operating Junction Temperature

Value 160 160 125 7 25 30 5 150 -65 to 200

200

Unit V V V V A A A W

°C

°C

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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BUX10

THERMAL DATA

Rthj-c Thermal Resistance Junction-case Max 1.17 °C/W

ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)

Symbol ICEO

ICEX

IEBO

VcEO(sus)*

VEBO

VcE(sat)*

VBE(sat)*

llFE

Is/b

fr

ton

ts

tf

Parameter Collector Cut-off Current (Is = 0) Collector Cut-off Current

Emitter Cut-off Current (lc = 0)

Collector-Emitter Sustaining Voltage Emitter-Base Voltage (lc = 0)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain

Second Breakdown Collector Current Transistor Frequency

Turn-on Time

Storage Time Fall Time Clamped Es/b Collector Current

Test Conditions VC E= 100V

VC E= 1 6 0 V VBE = -1.5V

Tease = 125 °C

VC E= 1 6 0 V VBE = -1.5V VEB = 5 V

Ic = 200 mA IE = 50 mA

Ic = 10 A IB = 1 A lc = 2 0 A IB = 2 A IC = 2 0 A IB = 2 A lc = 10A VCE = 2V Ic = 20 A VCE = 4 V VCE = 30 V t = 1 s VCE = 48 V t = 1 s l c = 1 A VCE =15 V f = 10MHz

lc = 2 0 A I B 1 = 2 A Vcc = 30V

Ic = 20 A IBI = - lB2 = 2A Vcc = 30V

Vc l a m p=125V L = 500 u.H

Min.

125 7

20 10 5 1 8

20

Typ.

0.3 0.7 1.6

0.5 0.6 0.15

Max.

1.5

1.5 6 1

0.6 1.2 2 60

1.5 1.2 0.3

Unit mA

mA mA mA V V V V V

A A MHz

US us us A

» Pulsed: Pulse duration = 3QO\is, duty cycle < 2 %

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BUX10

TO-3 MECHANICAL DATA

DIM.

A

B

C

D

E

G N P R U

V

mm

MIN.

11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00

TYP. MAX.

13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30

inch MIN.

0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187

TYP. MAX.

0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193

Cytaty

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