nc,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS
• 15 Watts at 100°C Case Temperature
• Typ V
CE,,
at)of 0.2 V at 200 mA
• Typ V
BEof 0.8 V at 200 mA
• Typ f
Tof 50 MHz at 10 V, 100 mA
TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960
* mechanical data
2N2987 oito THRU °"°
°r •
0 100 MIN — >~- DETAILS OF OUTLINE IN — THIS ZONE OPTIONAL
CASE TEMPERATURE IS M
2N2991 THRU 2N2994
da"" — i*"
tl!MH__E
NO
1<,-«
FHHAQ / /UN,-
I,-/A-/r
0011 • MAX-/ £-TIM*ll
0 1 0 0 — < 1
1 5 MIN M ^ COLLICTOI _ TEMf E«ATU«
-_^ MCAS POINT ( -moo Jp-fc^ THE COLLECTOR IS IN ELECTRICAL _____ ' "~fif ' V \ CONTACT WITH THE CASE
^~ "!5\' '//'/'^~taii
"' r" 0700^ / ^3-^\ ALL JEDEC TO-5 DIMENSIONS H-o4s| 3 LEADS 3.ASE/ ^45'^V ' ° """ AND NOTES ARE APPLICABLE
-HATING. °°" "'* ' tM'TTER All OIM1NSIONS ill
flAM UNLISi OTHilwiSI
EASURED 0.144 INCH ± 0.010 INCH DOWN FROM TOP OF CAN !"elF"D
THE COLLECTOR IS IN ELECTRICAL r_ «?!• Dlt CONTACT WITH THE CASE
OMm- \co«KTCM POSITION OF THE LEADS IN R E L A T I O N STii --A V r T0 THE HEX IS NOT CONTROLLED - mm /00!%H I.U rf^S f
==f ?c'jJ!j 01"I1"" MAXIMUM RECOMMENDED MOUNTING
\. • TOROUE: IS IN.-IB.
ATUM MfAJUllMINt POINT L^uumi *" °"""ISI0"" "' UNltll OTHitWISE
SFicirno
n
' ! '
t
•*-
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
2N2987 2N2988 2N2991 2N2992 2N2989 2N2990 2N2993 2N2994
* Collector-Base Voltage 95 V 155 V 95V 155V
* Collector-Emitter Voltage (See Note 1) 8 0 V 100 V 80V 100V
* Emitter-Base Voltage -< 7 V >•
» Continuous Collector Current -< 1 A Peak Collector Current (See Note 2) -4 1.5 A
* Continuous Base Current -< 0.2 A Safe Operating Region at (or below) 100°C Case Temperature . . . . See Figure 10
* Continuous Device Dissipation at (or below) 100°C Case Temperature
(See Note 3) -< 15 W —
* Continuous Device Dissipation at (or below) 25°C Free-Air Temperature
(See Note 4) -<— 1 W —>• -< 2 W
* Operating Case Temperature Range ^ -o5°C to 200°C
4 Storage Temperature Range -^ -65°C to 200°C
* Lead Temperature Y\<> Inch from Case for 10 Seconds ^ 230°C
NOTES: 1. This value applies between 1mA and 30 mA collector current when the bait-emitter diode ii open-circuited.
2. Thii volue oppliei foe lp < 0,3 mi, duty cycle < 10%.
3. Derate linearly to 200°C caie temperature at the rale of ISO mW/deg.
4 Derate linearly to 200°C free-air temperature at the rale of 5.7 mW/deg for the 2N2987 through 2N2990 and 11.4 mW/deg for the 2N2991 through 2N2994.
Quality Semi-Conductors
, Una,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
"electrical characteristics at 25°C case temperature (unless otherwise noted)
TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-3960
PARAMETER
Collector-Emitter VICEO Breakdown Voltage ICEO Collector Cutoff Current
ICEV Collector Cutoff Current
lE»o Emitter Cutoff Current
I, Static Forward Current Transfer Ratio
VK Base-Emitter Voltage
Collector-Emitter VcE(Mt) saturation Voltage
Small-Signal Common-Emitter
"'• Forward Current Transfer Ratio I 1 Small-Signal Common-Emitter l""l Forward Current Transfer Ratio . Common-Base Open-Circuit
^*° Output Capacitance
TEST CONDITIONS
lc = 30mA, I, = 0, See Note 5
VcE = 50V, l, = 0 VCE = 90V, l, = 0 VcE = 90V, Vtt = -1.5V VCE = 150V, VK = -1.SV VcE = 90V, VK = -1.5V, Tc = 175°C
V« = 150V, VK = -1.5V, Tc = 175°C
VEI = 7 V, lc - 0 VCE = 5 V, lc = 1 mA V« = 5V, lc = 200mA,
See Notes 5 and 6
VcE = SV, lc = 500mA, See Notes 5 and 6
VC E= 10 V, lc = 100mA, See Notes 5 and 6
VCE = 5V, lc = 200mA, Tc = -5S'C,
See Notes 5 ond 6
VcE = 5V, lc = 200mA, See Notes 5 and 6
li*=20mA, lc = 200mA, See Notes 5 and 6
li = 50mA, lc = 500mA, See Notes 5 and 6
1, = 20mA, lc = 200mA, See Notes 5 and 6
l, = 50mA, lc = 500mA, See Notes 5 and 6
VCE = 10 V, lc = 100mA, f = 1 kHz
VCE= 10 V, lc = 100mA, f = 30 MHz
Vci = 10 V, U = 0, f = 1 MHz
2N298J 2N2991 MINMA
80 0.1
25
15
2 20
25 7
20
25
10
0.9
1
1.4
0.8
3
25 85
1
50
' 2N2988 2N2992 X MIN MA
100
0.1
25
15 25 20
25 75
20
25
10
0.9
1
1.4
0.8
3
25 85
1
50
2N2981 2N2993 X MIN MA,
80 0
1
2 40
60 12
40
50
20
0.9
1
1.4
0.8
3
50 170
1
50
2N2990 1 2N2994 kjNIT K MIN MAX)
100
0.1
25
15 25 40
60 120
40
50
20
0.9
1
1.4
0.8
,
50 170
1
50 V
- ij.4'p.n
- nA
. uAp*
nA
V
V
PF
NOTES: S. These potomeleri mutt bt measured using pulti lechnia.u«s. tp = 300 /is, duly cycle < 2%.
i. These poromilin art measured with voltoge-sensing contacts siporoli from tht current-carrying contacts.
•Indicate! JEDEC registered dots
thermal characteristics
PARAMETER
<9j.c Junction-to-Case Thermal Resistance f9j.A Junction-to-Free-Air Thermal Resistance
2N2987 THRU 2N2990
MAX 6.67
175
2N2991 THRU 2N2994
MAX 6.67 87.5
UNIT
deo/W
switching characteristics at 25't case temperature PARAMETER
tOT Turn-On Time toff Turn-Off Time
TEST CONDITIONS!
lc = 200 mA, I,,,, = 20 mA, lg,2, = -20 mA, VnEioffi ~ 3.4 V, RL = 150 fi»See Figure 1
TYP 0.14
2.6
UNIT ia
tVoltoge ond current values shown are nominal,, exact values vary slightly with transistor parameters.
