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BYT260PI-1000

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SGS-THOMSON

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BYT260PI(V)-1000 BYT261 PI(V)“1000

FAST RECOVERY RECTIFIER DIODES

FEATURES

. VERY LOW REVERSE RECOVERY TIME . VERY LOW SWITCHING LOSSES . LOW NOISE TURN-OFF SWITCHING

■ INSULATED PACKAGE : Insulating voltage = 2500 Vrms

Capacitance = 45 pF

DESCRIPTION

Dual high voltage rectifiers suited for Switch Mode Power Supplies and other power converters.

The devices are packaged in ISOTOP.

K2 A2 A2 <1

r * n 1

O !

l

i

K1 A1 K2 A1

BTY261 PI(V)-1000 BTY260PI(V)-1000

ISOTOP ® (Plastic) Screw version (*)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

Vrrm Repetitive peak reverse voltage 1000 V

Ifrm Repetitive peak forward current tp < 10ps 750 A

Ifirms) RMS forward current Per diode 140 A

If(av) Average forward current Tc=60°C 8 = 0.5

Per diode 60 A

Ifsm Surge non repetitive forward current tp=10ms sinusoidal

Per diode 400 A

Tstg

Tj Storage and junction temperature range - 40 to + 150 - 40 to + 150 O O oo

* : Tin plated Fast-on version is also available (without V suffix).

TM : ISOTOP is a trademark of SGS-THOMSON Microelectronics.

August 1993 E d:1A 1/4

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BYT260PI(V)-1 OOP / BYT261 PI(V)-1 OOP THERMAL RESISTANCE

Symbol Parameter Value Unit

Rth (j-c) Junction to case Per diode 0.7 °C/W

Total 0.4

Rth (c) Coupling 0.1 °C/W

When the diodes 1 and 2 are used simultaneously :

A Tj(diode 1) = P(diode) x Rth(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode)

STATIC CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

Vf * Tj = 25°C If = 60 A 1.9 V

Tj = 100°C 1.8

Ir ** Tj = 25°C Vr = Vrrm 100 pA

Tj = 100°C 6 mA

Pulse te s t: * tp = 380 ps, duty cycle < 2 %

** tp = 5 ms, duty cycle < 2 %

RECOVERY CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

trr Tj = 25°C If= 0.5A Irr = 0.25A

Ir = 1A

70 ns

If= 1A dlF/dt = -15A/|xs Vr = 30V

170

TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance)

Symbol Test Conditions Min. Typ. Max. Unit

tlRM d I F/dt = -240A/ps Vcc = 200V If = 60A Lp < 0.05pH Tj = 100°C see fig. 11

200 ns

dlF/dt = -480A/|is 120

Irm d I F/dt = -240A/|is 40 A

d I F/dt = -480A/ps 44

TURN-OFF OVERVOLTAGE COEFFICIENT (With serie inductance)

Symbol Test Conditions Min. Typ. Max. Unit

r Vrp

C Vcc

Tj = 100°C Vcc = 200V If=If<av)

d I F/dt = -60A/ps Lp = 2.5pH see fig.12

3.3 4.5 /

To evaluate the conduction losses use the following equation : P = 1.47 x If(av) + 0.005 x If2(rms>

2/4 SGS-THOMSON

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BYT260PI(V)-1 OOP / BYT261 PI(V)-1 OOP

Fig-1 : Low frequency power losses versus Fig.2 : Peak current versus form factor, average current.

P F (a v ) IM (A )

Fig-3 : Non repetitive peak surge current versus overload duration.

Fig-4 : Relative variation of thermal impedance junction to case versus pulse duration.

q | I I I I I I I I I I I I I I I h ii I l I I l 11II ___ I I 11

6.001 o.oi 0.1 1 10

Fig.5 : Voltage drop versus forward current. Fig.6 : Recovery charge versus diF/dt.

V F M (V ) Q R R (^ C )

CZT SGS-THOMSON T# fsoeamiciBaiMiBi

3/4

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BYT260PI(V)-1 OOP / BYT261PI(V)-1000 Fig.7 : Recovery time versus dlF/dt.

T F R (^ S )

Fig-9 : Peak forward voltage versus dlF/dt.

V F P (V )

Fig.8 : Peak reverse current versus dlF/dt.

IR M (A )

Fig.10 : Dynamic parameters versus junction temperature.

Q R R ; IR M [ T j] /Q R R ; IR M [ T j = 1 0 0 o C ]

Fig.11 : TURN-OFF SWITCHING CHARACTE- Fig.12 : TURN-OFF SWITCHING CHARACTE­

RISTICS (Without serie inductance) RISTICS (With serie inductance)

Cytaty

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