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BUT100

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r z 7 SGS THOMSON

^ 7 # M O O l i m i a m i O O S B U T 1 0 0

FAST SWITCHING POWER TRANSISTOR

. HIGH EFFICIENCY SWITCHING

■ VERY LOW SATURATION VOLTAGE

■ RECTANGULAR SAFE OPERATING AREA . WIDE ACCIDENTAL OVERLOAD AREA

DESCRIPTIO N

Suitable for motor drives, SMPS converters, uninterruptable power supply operating low volt­

age supply.

ABSO LUTE MAXIMUM RATINGS

S ym b o l P a ra m e te r V a lu e U n it

Vcev Collector-emitter Voltage (Vbe = - 1.5V) 200 V

Vceo Collector-emitter Voltage (Ib = 0) 125 V

Vebo Emitter-base Voltage (lc = 0) 7 V

Ie Emitter Current 50 A

Iem Emitter Peak Current 150 A

Ib Base Current 10 A

Ibm Base Peak Current 30 A

P tot Total Dissipation at T c < 25°C 300 W

T stg Storage Temperature - 65 to 200 °C

Ti Max. Operating Junction Temperature 200 °C

December 1988 1/4

(2)

BUT100

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 0.58 °C /W

ELECTRICAL CHARACTERISTICS

( T case

= 25°C unless otherwise specified)

S ym b o l P a ra m e te r T e s t C o n d itio n s M in. Typ . M ax. U nit

ICER Collector Cutoff Current <O m II < o m < 1 mA

(Rbe =5£2) < om II < o m < T c = 100°C 5 mA

IcEV Collector Cutoff Current <O m II < o m < VBE = - 1.5V 1 mA

>

o>n

o>

V BE = - 1.5V T c= 100°C 4 mA

Iebo Emitter Cutoff Current (lc = 0 )

< m CD II cn < 1 mA

V cE O (sus)* Collector Emitter lc = 0.2A 125 V

Sustaining Voltage L = 25mH Vebo Emitter-base Voltage

(lc - 0)

Ie = 50mA 7 V

V eE (sat)* Collector-emitter l c = 50A l B = 2.5A 0.9 V

Saturation Voltage lc = 100A l B = 1 0 A 0.9 V

l c = 50A Ib = 2.5A T j = 100°C 1.2 V

lc = 100A l B = 10A T| = 100°C 1.5 V

VBE(sat)* Base-emitter Saturation lc = 50A l B = 2.5A 1.4 V

Voltage lc = 100A l e = 10A 2 V

lc = 50A l B = 2.5A Tj = 100°C 1.4 V

l c = 100A Ib = 10A Tj = 100°C 2.1 V

dic/dt Rate of Rise of on-state Vcc = 100V Rc = 0 • B1 = 5A 180 A/ps

Collector Current t p = 3gs See fig. 1

Tj = 100°C

INDUCTIVE LOAD Vcc = 90V Vclamp = 1 2 5 V

u Storage Time lc = 50A Ibi =2.5A 2 gs

tf Fall Time V BB = — 5 V Lc = 80uH 0.2 gs

tc Crossover Time Rb2 =

See fig. 2

T j = 100°C 0.35 gs

VcEW Maximum Collector V cc = 90V Icwoff = 150A 125 V

Emitter Voltage without V BB - - 5 V Ib i - 1 0 A

Snubber L c = 30gH RB2 “ 1 ^

T j = 125°C See fig. 2 Pulsed : Pulse duration = 3ns, duty cycle = 2 %.

2/4 f Z

T SGS-THOMSON

^ 7 # RfflDe^@d[L©eTrK®0!OD©S

(3)

BUT100

Figure 1 : Turn-on Switching Characteristics ot the Transistor.

Figure 2 : Turn-off Switching Characteristics of the Transistor.

rZ Z SCS-THOMSON

“ ■ I f SfaSOBLlCTSaWKi

3/4

(4)

BUT100

Forward biased Safe Operating Area (FBSOA). Reverse biased Safe Operating Area (RBSOA).

'

Lr

^ I CW0ff

_4

1 _

L . .

a n t i s a t

T j < 1 2 5 °C VCE (V)

o so 100 150 200

SGS-THOMSON mawmacmmic*

4/4

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