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PROCESS

PRINCIPAL DEVICE TYPES PROCESS

DIE SIZE DIE THICKNESS

BASE BONDING PAD AREA EMITTER BONDING PAD AREA TOP SIDE METALIZATION BACK SIDE METALIZATION

29

145 Adams Avenue

Hauppauge, NY 11788 USA Phone (631) 435-1110 Fax (631) 435-1824 w w w . c e n t r a l s e m i . c o m PROCESS DETAILS

Please refer to

selection guide on page . GEOMETRY

Central Central Central Central Central

Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.

TM

CP189

EPITAXIAL BASE 80 x 80 MILS 12 MILS 12 x 18 MILS 13 x 28 MILS Al - 30,000Å

Cr/Ni/Ag - Ni-6,000Å; Ag-10,000Å

B E

CJD41C TIP41C

NPN - Amp/Switch Transistor Chip

BACKSIDE COLLECTOR

Power Transistors

20

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