PROCESS
PRINCIPAL DEVICE TYPES PROCESS
DIE SIZE DIE THICKNESS
BASE BONDING PAD AREA EMITTER BONDING PAD AREA TOP SIDE METALIZATION BACK SIDE METALIZATION
29
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Please refer to
selection guide on page . GEOMETRY
Central Central Central Central Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
CP189
EPITAXIAL BASE 80 x 80 MILS 12 MILS 12 x 18 MILS 13 x 28 MILS Al - 30,000Å
Cr/Ni/Ag - Ni-6,000Å; Ag-10,000Å
B E
CJD41C TIP41C
NPN - Amp/Switch Transistor Chip
BACKSIDE COLLECTOR
Power Transistors
20