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BUV19

SGS-THOMSON

^ D o i o i m i o i r ^ o i a t s i

NPN HIGH CURRENT SWITCHING TRANSISTORS

■ HIGH EFFICIENCY SWITCHING

. VERY LOW SATURATION VOLTAGE AT 40A . FAST TURN-OFF AND TURN-ON

DESCRIPTIO N

High current, high speed transistors suited for low voltage applications : high efficiency converters, motor controls.

ABSOLUTE MAXIMUM RATINGS

Symbol P a ra m e te r V alu e

B UV18 B UV19 Unit

VcBO Collector-base Voltage (Ie = 0 ) 120 160 V

VcEO Collector-emitter Voltage (Ib = 0) 60 80 V

Vebo Emitter-base Voltage (lc = 0) 7 7 V

•c Collector Current 50 50 A

IcM Collector Peak Current (t„ < 5ms) 90 70 A

Ib Base Current 16 12 A

Ibm Base Peak Current (tp < 5ms) 40 30 A

P tot Total Dissipation at T c < 25°C 250 W

T stg Storage Temperature - 65 to 200 °C

T| Max. Operating Junction Temperature 200 °C

November 1988 1/8

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THERM AL DATA

Rthj-case Thermal Resistance Junction-case max 0.7 °C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)

RESISTIVE LOAD

Symbol P a ra m e te r T e s t C onditions Min. Typ. Max. Unit

ton Turn-on Time for BU V18 1.2 1.5 US

t . Storage Time Vcc = 60V lo =80A 0.6 1.1 ns

t i Fall Time CD II I m CM II CO< 0.18 0.25 ns

ts Storage Time for B U V18 1.7 ns

ti Fall Time Vcc = 60V lc = 80A

IB1 - — Ib2 = 8A T c = 125°C

0.5 ns

ton Turn-on Time for BU V19 0.9 1.3 ns

ts Storage Time Vcc = 80 V lc = 60A 0.6 1.1 ns

tl Fall Time 03 II I 03~rvj II 03 > 0.17 0.25 ns

ts Storage Time for B U V19 1.7 ns

tf Fall Time V cc = 80 V lc = 60A

IB1 = — lB2 - 6A T c = 125°C

0.5 ns

" Pulsed : Pulse duration - 300ns, duty cycle = 2%

^ 7

SCS-THOMSON

MiosmiseinBMioe®

2/8

(3)

DC and AC Pulse Area. DC and AC Pulse Area.

Collector-emitter Voltage vs. Base-emitter Resis­

tance.

Transient Thermal Response.

/ = 7 SGS-THOMSON

“ •7 / Miaseejcramaw

3/8

(4)

Minimum Base Current to Saturate the Transistor.

0 10 20 30 40 50 60 70 lc IA)

0 1 2 3 4 5 6 7 l B(A(

Collector Current Spread vs Base Emitter Voltage.

Base Characteristics.

0 1 2 3 4 5 6 7 l B(A)

Saturation Voltage.

DC Current Gain.

E fj

SGS-THOMSON 4/8

(5)

0 10 20 30 40 50 SO 70|C(A)

Collector Saturation Region.

0 1 2 3 4 5 lB (A)

Collector Current Spread vs Base Emitter Voltage.

Base Characteristics.

0 1 2 3 4 5 *b(A )

Saturation Voltage.

f Z T SGS-THOMSON

“ ■ ;# MOCMMUCinilMiCS

5/8

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SW ITCHING O PERATING AND OVERLOAD AREAS

? --- c

T

Transistor Forward Biased Transistor Reverse Biased

- During the turn on - During the turn off with negative base emitter - During the turn off without negative base-emitter

voltage and Rbe > 3 f i

voltage

Forward Biased Safe Operating Area (FBSOAR). Reverse Biased Safe Operating Area (RBSOAR).

'c

IA) 80

GO

40

20

0

0 20 40 60 80 100 120 V c e (VI

BUV 18 1

- V BE = - 3 >

Forward Biased Accidental Overload Area (FBAOA).

Reverse Biased Accidental Overload Area (RBAOA).

BUV 18

~ r

V BE = - 3 V

0 20 40 60 80 100 120 Vc eIVI

The Kellog network (heavy print) allows the calcu- After the accidental overload current, the RBAOA lation of the maximum value of the short-circuit cur- has to be used for the turn off.

rent for a given base current IB (90 % confidence).

High accidental surge currents (I > Icm) are allowed if they are non repetitive and applied less than 3000 times during the component life.

r Z Z SGS-THOMSON

“ ■71 mammaemamst

(7)

Forward Biased Safe Operating Area (FBSOAR). Reverse Biased Safe Operating Area (RBSOAR).

■c

(A)

60

40

20

0

0 20 40 GO 80 100 120 V CE(V) 0 20 40 60 80 100 120 VCE(V)

The hatched zone can only be used for turn on.

BUV 19 I

Ti<12S<>C

v B E =- 3 V

Forward Biased Accidental Overload Area (FBAOA).

*CSM (A) 200

160

120

80

40

0

0 10 2 0 3 0 4 0 5 0 6 0 70 80 V CE(V)

Reverse Biased Accidental Overload

c s m (A)

80

40 ■ --- :—

BUV

19

T j < 25 °C

V BE = — 3 V

20 40 80 80 100 120 V CE<VI

The Kellog network (heavy print) allows the calcu- After the accidental overload current, the RBAOA lation of the maximum value of the short-circuit cur- has to be used for the turn off.

rent for a given base current Ib (90 % confidence).

High accidental surge currents (I > Ic m) are allowed if they are non repetitive and applied less than 3000 times during the component life.

r zT SGS-THOMSON mcmmacmmc*

7/8

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Switching Times vs Collector Current (resistive Switching Times vs Collector Current (resistive

load). load).

0 10 20 30 40 50 60 70 90 lc (A> 0 10 20 X 40 50 60 lc (A )

Switching Times vs Collector Current. Switching Times vs Collector Current.

0 10 X X 40 50 60 IC(A>

Switching Times vs Junction Temperature.

* 7 / SGS-THOMSON 8/8

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