2N7002E

Small Signal MOSFET

60 V, 310 mA, Single, N−Channel, SOT−23

Features

• ^{Low R} DS(on)

• Small Footprint Surface Mount Package

• Trench Technology

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Low Side Load Switch

• Level Shift Circuits

• DC−DC Converter

• Portable Applications i.e. DSC, PDA, Cell Phone, etc.

MAXIMUM RATINGS (T

= 25 ° C unless otherwise stated)

Rating Symbol Value Unit

Drain−to−Source Voltage V

60 V

Gate−to−Source Voltage V

± 20 V

Drain Current (Note 1)

Steady State T

= 25 ° C T

= 85 ° C

t < 5 s T

= 25 ° C

T

= 85 ° C I

260 190 310 220

mA

Power Dissipation (Note 1) Steady State

t < 5 s

P

300 420

mW

Pulsed Drain Current (t

= 10 m s) I

1.2 A Operating Junction and Storage

Temperature Range

T

, T

−55 to +150 ° C

Source Current (Body Diode) I

300 mA

Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s)

T

260 ° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be

Simplified Schematic

SOT−23 CASE 318 STYLE 21

703 M G G

703 = Device Code M = Date Code G = Pb−Free Package

MARKING DIAGRAM

& PIN ASSIGNMENT

3

2 1

Drain

Gate

1

3

Source 60 V 3.0 W @ 4.5 V

R

MAX

310 mA I

MAX (Note 1) V

2.5 W @ 10 V

(Top View) 3

1

2

N−Channel

www.onsemi.com

www.onsemi.com ELECTRICAL CHARACTERISTICS (T

= 25 ° C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

V

= 0 V, I

= 250 m A 60 V

Drain−to−Source Breakdown Voltage Temperature Coefficient

V

/T

75 mV/ ° C

Zero Gate Voltage Drain Current I

V

= 0 V, V

= 60 V

T

= 25 ° C 1 mA

T

= 125 ° C 500

Gate−to−Source Leakage Current I

V

= 0 V, V

= ± 20 V ± 100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V

V

= V

, I

= 250 m A 1.0 2.5 V

Negative Threshold Temperature Coefficient

V

/T

4.4 mV/ ° C

Drain−to−Source On Resistance R

V

= 10 V, I

= 240 mA 0.86 2.5 W

V

= 4.5 V, I

= 50 mA 1.1 3.0

Forward Transconductance g

V

= 5 V, I

= 200 mA 530 mS

CHARGES AND CAPACITANCES

Input Capacitance C

V

= 0 V, f = 1 MHz, V

= 25 V

26.7 40 pF

Output Capacitance C

4.6

Reverse Transfer Capacitance C

2.9

Total Gate Charge Q

V

= 5 V, V

= 10 V;

I

= 240 mA

0.81 nC

Threshold Gate Charge Q

0.31

Gate−to−Source Charge Q

0.48

Gate−to−Drain Charge Q

0.08

SWITCHING CHARACTERISTICS, V

= V (Note 3)

Turn−On Delay Time t

V

= 10 V, V

= 30 V, I

= 200 mA, R

= 10 W

1.7 ns

Rise Time t

1.2

Turn−Off Delay Time t

4.8

Fall Time t

3.6

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

V

= 0 V,

I

= 200 mA

T

= 25 ° C 0.79 1.2 V

T

= 85 ° C 0.7

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%

3. Switching characteristics are independent of operating junction temperatures

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics V

, DRAIN−TO−SOURCE VOLTAGE (V) V

, GATE−TO−SOURCE VOLTAGE (V)

6 4

2 0

0 0.4 0.8 1.2 1.6 2.0

6 4

2 0

0 0.4 0.8 1.2

Figure 3. On−Resistance vs. Drain Current and Temperature

Figure 4. On−Resistance vs. Drain Current and Temperature

I

, DRAIN CURRENT (A)

1.2 1.0

0.8 0.6

0.4 0.2

0 0 0.4 0.8 1.2 1.6 2.0 2.4

1.2 1.6

1.8 2.2

I

, DRAIN CURRENT (A) I

, DRAIN CURRENT (A)

R

, DRAIN−T O−SOURCE RESIST ANCE ( W ) ANCE ( W ) O−SOURCE

V

= 10 V 5.0 V

7.0 V 8.0 V

9.0 V 4.5 V

4.0 V 6.0 V

3.5 V

3.0 V

2.5 V

2.0 V T

= 125 ° C T

= −55 ° C T

= 25 ° C

T

= −55 ° C T

= 125 ° C

T

= 25 ° C T

= 85 ° C V

= 4.5 V

I

, DRAIN CURRENT (A)

1.2 1.0 0.8

0.6 0.4

0.2 0

0 0.4 0.8 1.2 1.6 2.0 2.4

R

, DRAIN−T O−SOURCE RESIST ANCE ( W )

T

= −55 ° C T

= 125 ° C

T

= 25 ° C T

= 85 ° C V

= 10 V

I

= 250 mA

I

= 75 mA

I

= 0.2 A

V

= 4.5 V

www.onsemi.com TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge

Qg, TOTAL GATE CHARGE (nC)

1 0.8

0.6 0.4

0.2 0

0 1 2 3 4 5

Figure 9. Diode Forward Voltage vs. Current V

, SOURCE−TO−DRAIN VOLTAGE (V)

1.2 1.0

0.8 0.6

0.4 0.2

0.01 1 10

V

, GA TE−T O−SOURCE VOL T AGE (V)

I

, SOURCE CURRENT (A)

T

= 25 ° C I

= 0.25 A

20 16

12 8

4 0

0 10 20 30 40

C, CAP ACIT ANCE (pF)

C

C

C

T

= 25 ° C V

= 0 V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

T

= 25 ° C T

= 85 ° C

V

= 0 V

0.1

V GS(th) , THRESHOLD VOL TAGE (NORMALIZED) 1.2 1.1 1.0 0.9

0.8

0.6 0.7

-60 -20 20 60 100 140

T, TEMPERATURE ( °C)

Figure 10. Temperature versus Gate

Threshold Voltage

PACKAGE DIMENSIONS

SOT−23 (TO−236) CASE 318−08

ISSUE AR

D

A1

3

1 2

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT VIEW C

L

0.25

L1 e

E E

b

A

SEE VIEW C

DIM A

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b 0.37 0.44 0.50 0.015

c 0.08 0.14 0.20 0.003

D 2.80 2.90 3.04 0.110

E 1.20 1.30 1.40 0.047

e 1.78 1.90 2.04 0.070

L 0.30 0.43 0.55 0.012

0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022

NOM MAX

L1

H

2.10 2.40 2.64 0.083 0.094 0.104

HE

0.35 0.54 0.69 0.014 0.021 0.027

c

0 −−− 10 0 −−− 10

T ° ° ° °

T

3X

TOP VIEW

SIDE VIEW

END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X

3X

0.95

RECOMMENDED

STYLE 21:

PIN 1. GATE 2. SOURCE 3. DRAIN

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