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<2>£.mi-L.onaLLctoi L/^ioaucti, One,

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

Designer's'™ Data Sheet SWITCHMODE Series

NPN Silicon Power Transistors

The BUS98 and BUS98A transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications such as:

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits Fast Turn-Off Times

60 ns Inductive Fall Time -25°C (Typ) 120 ns Inductive Crossover Time -25°C (Typ) Operating Temperature Range -65 to +200°C 100°C Performance Specified for:

Reverse-Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages

Leakage Currents (125°C)

TELEPHONE: (973) 376-2922 (212)227-6005

BUS98 BUS98A

30 AMPERES NPN SILICON POWER TRANSISTORS

400 AND 450 VOLTS (BVCEO) 250 WATTS 850-1000 V(BVCES)

TO-204AA

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle §10%.

Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage

Collector Current — Continuous

— Peak(1)

— Overload Base Current — Continuous

— Peak(1)

Total Power Dissipation — TC = 25°C

— TC = 100°C Derate above 25°C

Operating and Storage Junction Temperature Range

Symbol VCEO(SUS)

VCEV VEB

'c 'CM

lol

IB

•BM PD

Tj, T

stg

BUS98 BUS98A

400 450 850 1000

7 30 60 120

10 30 250 142 1.42

-65to+200

Unit

Vdc Vdc Vdc Adc

Adc

Watts

W/°C

°C

Characteristic Thermal Resistance,

Junction to Case Maximum Lead Temperature

for Soldering Purposes:

1/8" from Case for 5 Seconds

Symbol Rejc

TL

Max 0.7

275

Unit

°C/W

°c

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

(2)

BUS98 BUS98A

ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)

Characteristic Symbol Win Typ Max Unit

OFF CHARACTERISTICS (1)

Collector-Emitter Sustaining Voltage (Table 1 )

(\C = 200 mA, IB = 0) L = 25 mH BUS98

BUS98A Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1-5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 125°C) Collector Cutoff Current

<v

CE

= Rated V

CEV

, RBE = 1 o n) T

C

= 25 °c

Tc = 125°C Emitter Cutoff Current

(VEB = 7 Vdc, IC = 0) Emitter-Base Breakdown Voltage

(lE = 100mA-lc = 0)

vCEO(sus)

!CEV

ICER

'EBO

VEBO

400 450

7.0

0.4 4.0

1.0 6.0 0.2

Vdc

mAdc

mAdc

mAdc

Vdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased

!S/b RBSOA

See Figure 12 See Figure 13 ON CHARACTERISTICS (1)

DC Current Gain

(IC = 20 Adc, VCE = 5 Vdc) BUS98 (IC = 16AdC, VcE = 5V) BUS98A Collector-Emitter Saturation Voltage

(IC = 20 Adc, IB = 4 Adc) BUS98

(IC = 30 Adc, IB = 8 Adc)

(IC = 20 Adc, IB = 4 Adc, TC = 100°C)

(IC = 1 6 Adc, IB = 3.2 Adc) BUS98A (IC = 24 Adc, IB = 5 Adc)

(IC = 16 Adc, IB = 3.2 Adc, TC = 100°C) Base-Emitter Saturation Voltage

(IC = 20 Adc, IB = 4 Adc) BUS98 (IC = 20 Adc, IB = 4 Adc, TC = 100°C)

(IC = 1 6 Adc, IB = 3.2 Adc) BUS98A (IC = 16 Adc, IB = 3.2 Adc, TC = 100°C)

HFE

vCE(sat)

vBE(sat)

8

__

"

1.5 3.5 2.0 1.5 5.0 2.0

1.6 1.6 1.6 1.6

"

Vdc

Vdc

DYNAMIC CHARACTERISTICS Output Capacitance

(VcB = 10 Vdc, IE = O, ftest = 100 kHz)

cob — — 700 PF

SWITCHING CHARACTERISTICS Restive Load (Table 1)

Delay Time Rise Time Storage Time Fall Time

IB1 = 4.0 A, tp = 30 us, Duty Cycle < 2%, VBE(off) = 5 V) (for BUS98A- Ic = 16 A \b-\ 3 2 A)

td tr ts tf

_

0.1 0.4 1.55 0.2

0.2 0.7 2.3 0.4

US

Inductive Load, Clamped (Table 1) Storage Time

Fall Time Storage Time Crossover Time Fall Time

IC(pk) = 20 A (BUS98) l b 1 = 4 A

VBE(off) - 5 V , VCE(c1) = 250V)

!C(pk) = 16A (BUS98A) IDI = 6.2. A)

(Tr* - 95° P^

<TC = 100°C)

tsv tfi tsv tc tfi

1.55 0.06

1.8 0.3 0.17

— 2.8 0.6 0.35

us

(1) Pulse Test: PW = 300 us, Duty Cycle ^ 2%.

(3)

BUS98 BUS98A DC CHARACTERISTICS

<CD h—z

LU Lto:

^o oo

3 5 7 10 20 lc, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain

e

o

>

ER VO

oLU _ io o

0.5 0.3

0.1

i

IC = 15Al

: = 10 A

[— TC = 25°C •

i

0 . 1 0 . 3 0 . 5 1 2 3 4

IB, BASE CURRENT (AMPS)

Figure 2. Collector Saturation Region

LU

e

oo

1 0.7

0.3

0.1

3 10 20

1C, COLLECTOR CURRENT (AMPS)

Figure 3. Collector-Emitter Saturation Voltage

0.3 1 3

1C, COLLECTOR CURRENT (AMPS) Figure 4. Base-Emitter Voltage

10

104

1 103

LU

£ 102

O

fe 101 1 100

m-1

\/r VC

T

~ -joe

10

/ i

E = 25

= 150C

0°C

°c^

25°C 1 \

c

EVER _ -

>F-^

^x*

-*i1*^

^^r /

7"

f

/ /

f

J

«

-»" FORWARD

—=5= -~*

1 1 ' 1 1 /

f

-J 1

/

1

1

1

s

—f

— f 1

1

1

— j—

1

— 1

-0.4 -0.2 0 0.2 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region

0.6

10k

s 1k

100

10 Cib

HT j = 2 5 ° C l l i l

iCob:

1 10 100 VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

1000

(4)

BUS98 BUS98A

Table 1. Test Conditions for Dynamic Performance

INPUT CONDITIONSCIRCUIT VALUESTEST CIRCUITS

vCEO(sus)

20

PW Varied to Attain 1C = 100 mA

LcoN = 25mH,Vcc = 10V

C INF SEE ABOVE FOR DETAILED COND C

2

'cx'

- VCE- IR —

RBSOA AND INDUCTIVE SWITCHING

...^

-,ov I

v flMJE20° ^ _L J_ * ADJUST VC1

BUV20 r* 0.1 uF 50 uF ncQipcn I1 1 ^ | ^ UtolKtU Ig^

1 i^ T )x_ . 1

ADJUST VC2

TO OBTAIN DESIRED IB2

RCO| = O.OSn Vdamp = 250V VCC = 20 v

NDUCTIVE TEST CIRCUIT

^v£

TIONS

IENT-; L

'

^X"

— .

•« —

^^

^^iCPk^

I"1 R

H"

f CC

OUTPUT WAVEFORMS

t-l Adjusted to Obta n 1^

L

lr/nk) x^r tf Clamped Lcoi (!C(pk))

ix^ ,\, ' v

cc

l<— 11— » iff--

Lcoi (ic(pk))

i 1 t 2 y

VCE, v Test Equipment

TIME k>2-J 475 or Equivalent

RESISTIVE SWITCHING

TURN-ON TIME

Bl adjusted to obtain the forced hp£ desired TURN-OFF TIME Use inductive switching

dr ver as the input to the resistive test circuit.

Vcc = 250 V

Pulse Width = 10 us

RESISTIVE TEST CIRCUIT

s. ,—. Vrc/nt\

90%VCE(pk)/]\90%IC(pk)

— t sv

1 90% IB1

\

\.

V-x

-^

*

^ «•-trvfll-yfj — — ttj —

-/M^

/

^W/'VcElpk)

^*~^

»•

^ rV, 1U%

ic pk

2

% 'c g^—

1

o5 ic \r--ynn

<

i—

a: 1°

= _ XX

LU -X*

W o ^.X^

cn ,X^

-a ^x-'

CM . <*^

n

S*

^

^^

^

TIME

Figure 7. Inductive Switching Measurements

1 2 3 4 5

vBE(off)> BASE-EMITTER VOLTAGE (VOLTS)

Figure 8. Peak-Reverse Current

Cytaty

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