BUX22

BUX22 SGS-THOMSON

M © ^ © iL IO iriR M DOS

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR

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BUX22 is a silicon multiepitaxial planar NPN -ansistor in modified Jedec TO-3 metal case, tented for use in switching and linear applications n military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS

S y m b o l P a r a m e t e r V a lu e U n it

V c B O C o lle c t o r - b a s e V o lt a g e (Ie = 0) 3 0 0 V

V C E X C o lle c t o r - e m it t e r V o lt a g e ( Vb e = - 1.5 V ) 3 0 0 V

V CEO C o lle c t o r - e m it t e r V o lta g e (Ib = 0 ) 2 5 0 V

Ve b o E m it t e r- b a s e V o lt a g e ( lc = 0) 7 V

lc C o lle c t o r C u r r e n t 4 0 A

iCM C o lle c t o r P e a k C u r r e n t (tp = 1 0 m s) 5 0 A

Ib B a s e C u r r e n t 8 A

P tot T o t a l P o w e r D is s ip a tio n a t T case < 2 5 °C 3 5 0 W

T stg S t o r a g e T e m p e r a tu r e - 6 5 to 2 0 0 °C

T | J u n c tio n T e m p e r a tu r e 2 0 0 °C

N o v e m b e r 19 8 8 1/4

BUX22

THERMAL DATA

Rth j-c; T h e r m a l R e s is t a n c e J u n c t io n - c a s e M a x 0 .5 ° C /W

ELECTRICAL CHARACTERISTICS (Tcase = 25 unless otherwise specified)

S y m b o l P a r a m e t e r T e s t C o n d i t i o n s M in . T y p . M a x . U n it

IcE O C o lle c t o r C u to ff C u r r e n t

(Is = 0) Vc e = 2 0 0 V 3 m A

Oj m xI

C o lle c t o r C u t o ff C u r r e n t V CE = 3 0 0 V Tease = 1 2 5 °C

V BE = - 1.5 V 3 m A

Vc e = 3 0 0 V V BE = - 1 .5 V 1 2 m A

Ie b o E m itte r C u to ff C u r r e n t

( l c - 0) V EB = 5 V 1 m A

V cE O (sus)* C o lle c t o r - e m it t e r S u s t a in in g

V o lta g e l c = 2 0 0 m A 2 5 0 V

Ve b o E m it t e r- b a s e V o lt a g e ( lc = 0) Ie = 5 0 m A 7 V

V cE(sat)* C o lle c t o r - e m it t e r S a tu r a tio n l c = 1 0 A Is = 1 A 0 .2 1 V

V o lt a g e l c = 2 0 A l B = 2 .5 A 0 .3 2 1.5 V

V B E ( s a t ) * B a s e - e m it t e r S a tu r a tio n

V o lt a g e l c = 2 0 A Ib = 2 .5 A 1.1 1.5 V

h F E * D C C u r r e n t G a in l c = 1 0 A V Ce = 4 V 2 0 6 0

l c = 2 0 A Vc e = 4 V 10

1 s/ b S e c o n d B re a k d o w n C o lle c t o r V CE = 1 4 0 V t = 1 s 0 .1 5 A

C u r r e n t V CE = 2 0 V t = 1 s 1 7.5 A

f T T r a n s it io n F r e q u e n c y l c = 2 A f = 1 0 M H z

Vc e = 1 5 V

1 0 M H z

t o n T u r n - o n T im e (fig. 2 ) l c = 2 0 A

V c c = 1 0 0 V

Ib i = 2 .5 A

0 .2 2 1.3 p s

ts S t o r a g e T im e (fig. 2) l c = 2 0 A Ib i = 2 .5 A 1.5 2 p s

tf F a ll T im e (fig. 2) IB 2 = - 2 . 5 A V c c = 1 0 0 V 0 .1 7 0.5 p s

C la m p e d E s/b C o lle c t o r C u r r e n t (fig. 1)

V clamp = 2 5 0 V

L = 5 0 0 p H 2 5 A

* Pulsed : pulse duration = 300 ps, duty cycle < 2 %.

Safe Operating Areas. Derating Curves.

G-4067

0 50 100 150 Tu s e CC)

SCS-THOMSON MffiOWBLSOTiBMMCS 2/4

BUX22

■ermal Transient Response.

G-M9J

I ollecteur-emitter Saturation Voltage.

G-4157

3ase-emitter Saturation Voltage.

DC Current Gain.

G-4025

o-»iia

1 1 1 1

j f t w , e

'

/h -

' C* s ,.= -30f t

2 S 'C

125*C

» 10 l c (A )

Saturated Switching Characteristics.

G-4159

TT I / i

, i T

25

*(

l

Tc * s e = 25* C _

4 _{:: j r}

.

f ; [ i

K ) ’ 1 « l c (A ) K) ,C ( A )

5 7

3/4

BUX22

Saturated Switching Characteristics. Transition Frequency.

G -4 2 0 8

: : : }

-

_____ _J

’ 5v

1

f s 1 0 M H z

2 * S 8 2 4 8 8

1 0 1 1 I c (A )

Colltector-base Capacitance. Clamped Reverse Bias Safe Operating Areas.

Figure 1 : Clamped Es/bTest Circuit.

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TEST CONDITIONS : 7 V 2 | — Vbs I 2 2 V Ic / le = 8

tp = adjusted for nominal Ic Rbb - 1 £2

Figure 2 : Switching Times Test Circuit (resistive load).

SGS-THOMSON

* • 7 # ISail(EBffi)ElL®ESTriS®«aD8S*

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