Pełen tekst

(1)

BUV52

FAST SWITCHING POWER TRANSISTOR

■ FAST SWITCHING TIMES

■ LOW SWITCHING LOSSES

■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA­

TION

ABSOLUTE MAXIMUM RATINGS

S ym bol Param eter Value Unit

< o m < Collector-emitter Voltage ( Vb e = - 1.5V) 350 V

V cE O Collector-emitter Voltage (Ib = 0) 250 V

Ve b o Emitter-base Voltage (lc = 0) 7 V

lc Collector Current 20 A

IcM Collector Peak Current 30 A

Ib Base Current 4 A

Ibm Base Peak Current 6 A

Pbase Reverse Bias Base Dissipation (B.E. junction in avalanche) 1 W

P tot Total Dissipation at T c < 25°C 150 W

T"stg Storage Temperature — 65 to 200 °C

T i Max. Operating Junction Temperature 200 °C

November 1988 1/7

(2)

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1.17 °C/W

ELECTRICAL CHARACTERISTIC(Tcase = 25°C unless otherwise Specified)

S ym bol Param eter T e st C o n d itio n s Min. Typ. Max. Unit

•CER Collector Cutoff > UJo II > UlO >

0.5 mA

Current (Rbe = 100) < o m ii < o m < T c = 100°C 2.5 mA

IcEV Collector Cutoff Vce = Vcev Vbe = — 1.5V 0.5 mA

Current Vce = Vcev Vbe = - 1.5V T c = 100°C 2 mA

Iebo Emitter Cutoff Current (lc = 0)

< m CD II cn < 1 mA

V cE O (sus)* Collector Emitter l c = 0.2A 250 V

Sustaining Voltage L = 25mH Vebo Emitter-base

Voltage (lc = 0)

Ie = 50mA 7 V

V cE (sa t)* Collector-emitter lc = 4A Ib = 0.27A 0.35 0.8 V

Saturation Voltage l c = 8A IB = 0.8A 0.45 0.9 V

l 0 = 12A IB = 1-5A 0.6 1.2 V

l c = 4A l B = 0.27A Ti = 100°C 0.35 0.9 V

l c = 8A l B = 0.8A T| = 100°C 0.6 1.5 V

l c = 12A I b = 1 5A T = 100°C 0.9 1.9 V

VBE(sat)* Base-emitter lc = 8A l B - 0.8A 1 1.3 V

Saturation Voltage lc = 12A l B = 1 5A 1.2 1.5 V

l c = 8 A Ib = 0.8A T = 100°C 0.9 1.3 V

l c = 12A I b = 1-5A T = 100°C 1.2 1.5 V

dic/dt Rated of Rise of V0c = 200V Rc = 0 • B1 = 1.2A

On-state Collector Ti = 25°C 30 70 A/gs

Current See fig. 2 Ti = 100°C 25 60 A/ps

McE{2^s) Collector Emitter Vcc = 200V • B1 = 0.8A

Dynamic Voltage Rc = 25Q T = 25°C 1.8 3 V

See fig. 2 T = 100°C 2.8 5 V

V cE (4ns) Collector Emitter V Cc = 2 0 0 V

1

B1 = 0.8A

Dynamic Voltage Rc = 2 5 0 Ti = 25°C 1.1 1.7 V

See fig. 2 T, = 100°C 1.5 2.5 V

2/7 r z

7 SCS-THOMSON

MgcmaLscmMiics

(3)

ELECTRICAL CHARACTERISTIC(continued)

RESISTIVE LOAD

Sym bol Param eter Te st C o n d itio n s Min. Typ. Max. Unit

t , Rise Time Vcc - 200V o II IV) > 0.3 0.6 ps

t s Storage Time V BB = - 5 V IB2 = 1.5A 1 1.6 ps

t f Fall Time RB2 = 1.70

See tig. 1

tp = 30ps 0.15 0.3 ps

INDUCTIVE LOAD

S ym bol Param eter Test C o n d itio n s Min. Typ. Max. Unit

t s Storage Time VCC = 200V V c la m p - 250V 1.2 1.8 ps

t f Fall Time lc = 8 A l B = 0.8A 0.08 0.2 ps

t. Tail Time in Turn-on V BS = - 5V r B2 = 3 .1 0 0.03 0.12 ps

t c Crossover Time L c = 1.3mH See fig. 3 0.15 0.35 ps

ts Storage Time V cc = 200V Vclamp = 250V 1.8 2.4 ps

t f Fall Time o II 00 > l B = 0.8A 0.2 0.4 ps

t f Tail Tim e in Turn-on Vbb = - 5V Rb2 = 3 .1 0 0.08 0.2 ps

t c Crossover Time L c = 1.3mH See fig. 3

T, = 100°C 0.35 0.7 ps

ts Storage Time V c c = 200V V c,amp = 250V 2.8 ps

t f Fall Time O II CD > l B = 0.8A 0.5 ps

t , Tail Tim e in Turn-on < 03CD II O Rb2 = 5.6£2 0.15 ps

Lc = 1.3mH See fig. 3

ts Storage Time VCC = 200V Vc,amp = 250V 4.5 US

t f Fall Time lc = 8 A l B = 0.8A 0.8 ps

t f Tail Tim e in Turn-on > CO CO II o

Rb2 = 5.6Q 0.4 ps

Lc = 1.3mH See fig. 3

T j = 100°C

* Pulsed : Pulse duration = 300jjs. duty cycle = 2%.

Figure 1 : Switching Times Test Circuit (resistive load).

(1) Fast switching (2) Non-inductive resistor

^ 7 SGS-THOMSON

wiewwsuiCTJtaMiie#

3/7

(4)

Figure 2 : Turn-on Switching Waveforms.

Figure 3a : Turn-on Switching Test Circuits.

LC

(1) Fast electronic switch (2) Non-inductive resistor (3) Fast recovery rectifier SW : - closed for tsi, to, to

- open for Vcew

Figure 3b : Turn-on Switching Waveforms (inductive load).

r r j

SGS-THOMSON

^ 7 # isgicnm em iwDcs 4/7

(5)

DCand AC Pulse Area.

Transient Thermal Response.

K

Power and

Is/b

Derating versus Case Tempera­

ture.

0 25 50 75 100 125 150 175

Collector-emitter Voltage versus Base-emitter Re­

sistance.

Minimum Base Current to Saturate the transistor.

r z

T SGS-THOMSON

“ -T # HeSM ELSBTRM K*

(6)

Saturation Voltage. Saturation Voltage.

0 5 10 15

Switching Times versus Collector Current (resistive load).

t Ips)

10 20

Switching Times versus Collector Current (induc­

tive load).

Switching Times versus Collector Current (induc­

tive load).

6/7 r Z

T SGS-THOMSON

“ • / # RS!CRSBUICTn«fflllC8

(7)

SW ITCHING O PERATIN G AND O VER LO AD A R EAS

Transistor Forward Biased - During the turn-on

- During the turn-off without negative base-emitter voltage and 5.6£2 < Rbe S 50 Q

Transistor Reverse Biased

- During the turn-off with negative base emitter voltage

Forward Biased Safe Operating Area (FBSOA).

Reverse Biased Safe Operating Area (RBSOA).

- I j !< 100 °c-

i— — - = B = : 1— - —f— - H

— i—

i —

1- - H

- I — ■

— f - — —

— j—

— ——

t <

k

- I — , :

e

V)

0 50 too 150 200 250 300

The hatched zone can only be used for turn-on.

Forward Biased Accidental Overload Area (FBAOA).

Reverse Biased Accidental Overload Area (RBAOA).

70 60 so A0

30 20

10

■fcSM W 1--- !---1---1 L T : v- m n ° r _ i i i

j . . i j 1 2 0 ' Vs - J — s

" j

7 i s d

r ___ \

v _ ___ .

__ J [ i • 0 . 8 A 2 z j

/ i

*CM

m i m

— —

pE ivj j

0 50 100 150 200 250 300 0 50 100 150 200 250 300 350

The Kellog network (heavy point) allows the calcu- After the accidental overload current the RBAOA lation of the maximum value of the short-circuit for has to be used for the turn-off.

a given base current I

b

(90 % confidence).

High accidental surge currents (I I

cm

) are allowed if they are non repetitive and applied less than 3000 times during the component life.

r = J

SGS-THOMSON

“ ■ ; / s:SRSfflUiCTS3« 0C8

7/7

Obraz

Updating...

Cytaty

Updating...

Powiązane tematy :