BUZ30A

(1)

I l\ it n a i / s mA I me A 41 d>«. na

o ir'iv iv -z o r u v v c i i i c t i i d i d i u i

• N channel

• Enhancement mode w Avalanche-rated

Dl I"7 OA A

u u l g y m

u “ S '

VPT053B1

Type _{V DS} _I_d _R _{q s}_(on) Package 1> Ordering Code

BUZ 30 A 2 0 0 V 2 1 A 0 . 1 3 Q T O - 2 2 Q A B C 6 7 0 7 8 - S 1 3 Q 3 - A 3

Parameter Symbol Values Unit

Continuous drain current, Tc⁼26 °C 21 A

Puisea drain current, Tc⁼25 °C _{p u l s} 8 4

Avalanche current, limited by 7 jmax y A R^T

O - i

^ 1

A , i ; — U w rr

/ - w c a i c a i i L r ’ i i e e n e i y y , p e n u u i u i m i i i e u u y ^ j ( m a x ) Z7

^ A R

•4 O

1 £ m J

Au n l n n n k n « r * « r / - ' i Y / o i r * / ~ i 1 r » i i l e o

/ - \ v a m i m i m c n m i y y , o m y m f j u i o c J7

^ A S

/ i c n

• t w » W

ID⁼21 A, FDD ⁼50 V, i?GS ⁼25 Q

1 = 1 K 3 m H T = P f i ° n ...... — ^~

Gate-source voltage V G S ± 20 V

Power dissipation, Tc ⁼25 °C A o t 125

w

Operating and storage temperature range ^T_± j > -*• s t g^T - 5 5 . . .+ 150

8c

Tnermai resistance, chip-case ^th JC < 1.0 K/vV

r\iM i ... : i:j_ . j. . . . rviM ^a r \ r \ a r \

u iin numiauy category, uiini q-u uq-u I-

c . -

(2)

at 7] = 25 °C, unless otherwise specified.

min. typ. max.

Static characteristics

Drain-source breakdown voltage

T / rQg = n U \ / / = V j X Q n V . t - V X 1 1 1/ 1O R rr> A

yv (BR) DSS 200 - V

f ^ p t p t h r p ^ h n l H v n l t p n p—n » . ■■ w . . w . w . _ . w

T/" T7 T J __A

^G S = ^D S . A ) = ' m A

V ^ , . .' uit> (in) 2.1 3.0 4.0

Zero gate voltage drain current

V o s = 200 V, ^{V QS =}0 V

T = o r ° r

X j £_ VX V

Tj = 125 °C

T

^DSS

- n ^\ j . i

10

i ni . \j

100

pA

uate-source ieakage current Kgs= 20 V, K n g = 0 V

T

^GSS — x r\

1 U J Art

1 u u nA

Drain-source on-resistance Kg s = 10 V, ID = 13.5 A

^ D S (on) — 0.10 0.13 O

Dynamic characteristics Forward transconductance

Fns — 2 X /n X ^?ns(on)max > I^D= ^ 3.5 A

&fs

oO 15 ^- ⁿO

Input capacitance

v . . _r_US= n \/ v__ = oa \/ _{w ¥}_i _r_{u s} _{* >J}f = 1■ ■*" ■*-^{m h}^?

cV-/ ISS — 1400 1900 P F

Output capacitance

i / _ n \ i i / _ o r- v / x’_ x Kill i _

k g s = u v , k d s = £ 3 V , J = i i v i n z

c'-'OSS — 280 400

Reverse transfer capacitance Kgs = 0 V, Vos = 25 V, / = 1 MHz

cv-/ rss — 130 200

Turn-on time ro n, ( r on = rd (on) + t T)

= an v K ,„ ⁼m v l = a *? „ „ = an o

■ u u --- i - u o ■ - - I * u ~ * *1 ^ ‘ U i ---

(on) - 30 45 ns

U 70 i 10

Turn-off time ro ff, ( r off = rd (off) + rf)

Knn = 30 V, KGS = 10 V, /n = 3 A , Rgs = 50 0.

A (off) 250 320

*H - ^{n n}^ZfKJ ^{^ o n}^{1 £-\J}

(3)

Plantrinal r khoi«o/'toi«ietine ^r'nnt'rl^

^ i w u i i i v m v i K i i a v i v i ^ o v _ / i 11

at 7] = 25 °C, unless otherwise specified.

min. typ. max.

Reverse diode

Continuous reverse drain current T = o r ° r

JL Q l— W

/s - 21 A

P n k p rl rp\/prciP Hrpin n ir r p n t /"'k 1“ 0

l c = o

T „ . . — 84

D iode fo rw a rd o n -vo lta g e 4 = 42 A, VGS= 0 V

TZ

K S D — ^a n

I ^A O

I .O \ !

V

Reverse recovery time

i/ „ = m \ / H;V / H r= m n a/,,<;

r H < ~ * ! * h * t> I w"'|- / 1 ~ ~ * */

frr — 180 — ns

Reverse recovery charge

t z _ -4 n \ / r _ r jj / ^ nn a/_

k r = i u v , i F = i s , u/.p / u/ = iuuM /(ab

X. II 1.2 u C

(4)

I V I C N I 3

m 1 7 i n &w wfai wv n

i i n l o c c r\+h)QrxA/ioQ o r \ a r ^ i f ia/~J

U l I I ^ O O U l l I U I VV I O C O j J ^ V ^ I I I ^ U .

Total Dower dissipation Tv d. outDut characteristics

D _ - f ( rT ' \

r \o\ ~ J \ 1 C) T — f t Tf \

1D ~ J K ^ D S )

parameter: tp = 80 ps

BUZ 30A SIL02941

p

' tot

w

110 100

o no u

80 70 60 50 40 30 20

10 0

\

\\ k

\

\\kH

\ V

\ k r\

\>k

\ k

1 V\ 0 20 40 60 80 100: 120 “ C 160

► / r

c n BUZ 30A ( / p = 80j(is ) SIL02942

<jU

±T0 A

40

35

30

25

20

10

5

0

0 1 2 3 4 5 6 7 8 9 V 11

--- ► K>s Safe operating area

T = f l \ Z \ ' D ~ J V D S /

parameter: D = O.Oi, Tc = 25 'C

Tvp. transfer characteristics T = fl\Z \

± D ~ J \ Y G S /

parameter: tp = 80 ps, FDS = 25 V

(5)

I V I C N I 3

Tun ripain.cmipno n i y vnanr^wuivu --n ^ f o c i

^ D S (on) ~ f ( Id) n a r a m p t p r 1 [” --- ---- - --- - ■ ' UCD

n r

^ D S (on) “ / ( T )

n a r a m a t a r 1 = 1 3 R A = 1 f) V (sn rraa rn [~--- -- ' * U 1 ~ 1 ~ ' * 1 r U C 3 1 ~ ’ I v — — ---/

Tvp. forward transconductance n - f i i \

<5fs ~ J V^D /

parameter: tp = 80 ps

Gate threshold voltage

T / = f ! T \ r GS (th) ~ J \!

parameter: KGS = FDS , ID = i mA, (spread)

(6)

r * ■ i i i r

3 I C I V I C n i 3

Tim nono/iiton/ioc i y | s . v / U | ^ u v i i uii vu <p

C = f ( V DS)

n a r a m p t p r 1 = 0 V f = 1 M H 7 r — — --- ' uc5 - i j ...—

I0 = f { T c)

n a r a m a t a r 1 > 1 0 V

[ ~— — ■ ■ r UO — 1 ~

Forward characteristics of reverse diode

T — f l \ / \ J F ~ J V S D /

parameter: lx, fp = 80 ps, (spread)

Avalanche energy ^E^a^{S = f ( J} i)

n o r o m o t o r - J = 0 1 A T / = \ / p u i c*i i i ^ i . i Q — c— i /—\, k QQ — vy v

RGS = 25 Q, L = i .53 mH

0.0 1.0 2.0 V 3.0 20 40 60 80 100 120 14 0 cC 160

(7)

r * ■ i i i r

3 I C I V I C n i 3

TKonciAnt thopmol_______ _i i c a i i ^ i v m m v M l K a i M M p v v a t a i i V r V

Z t h JC “ / (^ p )

parameter: D = rp / T

- - tp

Tun nato nhomo 1y K * l v ' w i i u i y w

^ S = / « ? G a , e )

n a r a m p t p r 1 = 3 1 Ft A

l ~ — — ---■ p u i s

’ GS

16

V i 4

12

1 o

( / Bpuls= 3.1.5A) ^ii nn?Q?u

/ /

v ,

/ /

r

1 /

” DS m a x y m \ / /

/ r 7

/ /

' f D S m a x - ! 6 0 V

A 7

/ V .

| / | / /

/

V

/ 7/

1

I

1 / 1 n r /