MJE13005-2

(1)



!

These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

SPECIFICATION FEATURES:

• VCEO(sus) 400 V

• Reverse Bias SOA with Inductive Loads @ TC = 100_ C

• Inductive Switching Matrix 2 to 4 Amp, 25 and 100 _ C . . . tc @ 3A, 100_ C is 180 ns (Typ)

• 700 V Blocking Capability

• SOA and Switching Applications Information.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎÎÎÎ

400

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEV

ÎÎÎÎÎÎÎÎ

700

ÎÎÎÎ

Vdc

Emitter Base Voltage

ÎÎÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎÎ

9

ÎÎÎÎ

Vdc

Collector Current — Continuous

— Peak (1)

ÎÎÎÎÎÎÎ

IC ICM

ÎÎÎÎÎÎÎÎ

4 8

ÎÎÎÎ

Adc

Base Current — Continuous

— Peak (1)

ÎÎÎÎÎÎÎ

IB IBM

ÎÎÎÎÎÎÎÎ

2 4

ÎÎÎÎ

Adc

Emitter Current — Continuous

— Peak (1)

ÎÎÎÎÎÎÎ

IE IEM

ÎÎÎÎÎÎÎÎ

6 12

ÎÎÎÎ

Adc

Total Power Dissipation @ TA = 25_ C Derate above 25 _ C

ÎÎÎÎÎÎÎ

PD

ÎÎÎÎÎÎÎÎ

2 16

ÎÎÎÎ

Watts mW/ _ C

Total Power Dissipation @ TC = 25_ C Derate above 25 _ C

ÎÎÎÎÎÎÎ

PD

ÎÎÎÎÎÎÎÎ

75 600

ÎÎÎÎ

Watts mW/ _ C

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

– 65 to + 150

ÎÎÎÎ

_ C

THERMAL CHARACTERISTICS

Characteristic

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎÎÎ

R θJA

ÎÎÎÎÎÎÎÎ

62.5

ÎÎÎÎ

_ C/W

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎ

R θJC

ÎÎÎÎÎÎÎÎ

1.67

ÎÎÎÎ

_ C/W

Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds

ÎÎÎÎÎÎÎ

TL

ÎÎÎÎÎÎÎÎ

275

ÎÎÎÎ

_ C

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE13005/D

4 AMPERE NPN SILICON POWER TRANSISTOR

400 VOLTS 75 WATTS

*Motorola Preferred Device

CASE 221A–06

TO–220AB

(2)

MJE13005

ELECTRICAL CHARACTERISTICS _{(TC = 25_} C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

*OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (IC = 10 mA, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

400

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_ C)

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1 5

ÎÎÎ

mAdc

Emitter Cutoff Current (VEB = 9 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1

ÎÎÎ

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

ÎÎÎÎ

IS/b

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

See Figure 11

Clamped Inductive SOA with Base Reverse Biased

ÎÎÎÎ

RBSOA

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

See Figure 12

*ON CHARACTERISTICS

DC Current Gain

(IC = 1 Adc, VCE = 5 Vdc) (IC = 2 Adc, VCE = 5 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

10 8

ÎÎÎÎ

—

ÎÎÎÎ

60 40

ÎÎÎ

—

Collector–Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) (IC = 2 Adc, IB = 0.5 Adc) (IC = 4 Adc, IB = 1 Adc)

(IC = 2 Adc, IB = 0.5 Adc, TC = 100_ C)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.5 0.6 1 1

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) (IC = 2 Adc, IB = 0.5 Adc)

(IC = 2 Adc, IB = 0.5 Adc, TC = 100_ C)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.2 1.6 1.5

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎ

fT

ÎÎÎÎ

4

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

65

ÎÎÎÎ

—

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 2)

ÎÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 125 Vdc, IC = 2 A, IB1 = IB2 = 0.4 A, tp = 25 µs, Duty Cycle v 1%)

ÎÎÎÎ

td

ÎÎÎÎ

—

ÎÎÎÎ

0.025

ÎÎÎÎ

0.1

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Rise Time

(VCC = 125 Vdc, IC = 2 A, IB1 = IB2 = 0.4 A, tp = 25 µs, Duty Cycle v 1%)

ÎÎÎÎ

tr

ÎÎÎÎ

—

ÎÎÎÎ

0.3

ÎÎÎÎ

0.7

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Storage Time

IB1 = IB2 = 0.4 A, tp = 25 µs, Duty Cycle v 1%)

ÎÎÎÎ

ts

ÎÎÎÎ

—

ÎÎÎÎ

1.7

ÎÎÎÎ

4

ÎÎÎ

µ s

ÎÎÎÎÎÎÎÎ

Fall Time

v 1%)

ÎÎÎÎ

tf

ÎÎÎÎ

—

ÎÎÎÎ

0.4

ÎÎÎÎ

0.9

ÎÎÎ

µ s

Inductive Load, Clamped (Table 2, Figure 13)

ÎÎÎÎÎÎÎÎ

Voltage Storage Time

(IC = 2 A, Vclamp = 300 Vdc,

IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100_ C)

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

0.9

ÎÎÎÎ

4

ÎÎÎ

µ s

ÎÎÎÎÎÎÎÎ

Crossover Time

(IC = 2 A, Vclamp = 300 Vdc,

IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100_ C)

ÎÎÎÎ

tc

ÎÎÎÎ

—

ÎÎÎÎ

0.32

ÎÎÎÎ

0.9

ÎÎÎ

µ s

ÎÎÎÎÎÎÎÎ

Fall Time

IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100_ C)

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

0.16

ÎÎÎÎ

—

ÎÎÎ

µ s

*Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

(3)

MJE13005

C, CAP ACIT ANCE (pF) V CE(sat) , COLLECT OR–EMITTER SA TURA TION VOL TAGE (VOL TS)

V BE , BASE–EMITTER VOL TAGE (VOL TS) V CE , COLLECT OR–EMITTER VOL TAGE (VOL TS)

IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

1.1 1.3

0.7

0.3 Figure 1. DC Current Gain IC, COLLECTOR CURRENT (AMP)

0.1 0.4 2 4

10 Figure 2. Collector Saturation Region 0.03

IB, BASE CURRENT (AMP) 0.3

0.05 1.2

0.4 0 100

h FE , DC CURRENT GAIN

0.1 0.2 0.5 3

Figure 3. Base–Emitter Voltage Figure 4. Collector–Emitter Saturation Voltage 2

0.8

0.1

0 TJ = 25 °C

0.2 1

2 k

Cib

Cob 0.3

, COLLECT OR CURRENT ( A) µ

I C

– 0.4 – 0.2

70 50

300 1.6

0.5 IC = 1 A

TJ = – 55 °C 5

0.04 0.6

0.06 0.1 1

0.04 0.2 0.4 0.6

70 50

30

7 300 200

100 20 30

100 50 5

1 0.5 150 ° C

IC/IB = 4

+ 0.6

2 A

0.7 1 2

0.9 0.35

0.55

0.25 0.05 0.45 0.06

VCE = 2 V VCE = 5 V

TJ = 150° C

25 ° C

– 55 ° C

2

0.15 + 0.4 + 0.2

1 10 100 1 k 10 k

500 700 1 k

10 30

REVERSE FORWARD

VCE = 250 V

VBE(sat) @ IC/IB = 4 VBE(on) @ VCE = 2 V 20

3 A 4 A

4 25°C

25°C

0.06 0.1 1

0.04 0.2 0.4 0.6 2 4

3 TJ = – 55 °C 25°C

150 ° C

TJ = 150° C

125°C

100°C

75 ° C

50°C

25°C

(4)

trv

TIME IC

VCE

90% IB1 tsv

ICPK Vclamp

90% Vclamp 90% IC

10% Vclamp 10%

ICPK 2% IC IB

tfi tti

tc

Figure 7. Inductive Switching Measurements

Table 1. Typical Inductive Switching Performance

ÎÎÎÎ

IC AMP

ÎÎÎ

TC _ C

ÎÎÎ

tsv ns

ÎÎÎ

trv ns

ÎÎÎ

tfi ns

ÎÎÎÎ

tti ns

ÎÎÎ

tc ns

ÎÎÎÎ

2

ÎÎÎ

25 100

ÎÎÎ

600 900

ÎÎÎ

70 110

ÎÎÎ

100 240

ÎÎÎÎ

80 130

ÎÎÎ

180 320

ÎÎÎÎ

3

ÎÎÎ

25 100

ÎÎÎ

650 950

ÎÎÎ

60 100

ÎÎÎ

140 330

ÎÎÎÎ

60 100

ÎÎÎ

200 350

ÎÎÎÎ

4

ÎÎÎ

25 100

ÎÎÎ

550 850

ÎÎÎ

70 110

ÎÎÎ

160 350

ÎÎÎÎ

100 160

ÎÎÎ

220 390 NOTE: All Data recorded in the inductive Switching Circuit In Table 2.

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10–90% Vclamp

tfi = Current Fall Time, 90–10% IC tti = Current Tail, 10–2% IC

tc = Crossover Time, 10% Vclamp to 10% IC

An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms.

For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained us- ing the standard equation from AN–222:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi ] tc. However, at lower test currents this relationship may not be valid.

As is common with most switching transistors, resistive switching is specified at 25 ° C and has become a benchmark for designers. However, for designers of high frequency con- verter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_ C.

t, TIME ( s) µ

Figure 8. Turn–On Time

IC, COLLECTOR CURRENT (AMP) tr

td @ VBE(off) = 5 V

0.02 0.01 1 0.5

0.2 IC, COLLECTOR CURRENT (AMP)

0.4 1 2 4

0.04 VCC = 125 V IC/IB = 5 TJ = 25° C

0.2 0.05

0.1

0.1 Figure 9. Turn–Off Time 0.2

0.1 10 5

1 0.5 1 2 4

0.04 VCC = 125 V IC/IB = 5 TJ = 25 °C

0.2 0.3

0.5 0.1 2

ts

tf

RESISTIVE SWITCHING PERFORMANCE

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MJE13005

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

OUTPUT WAVEFORMS TEST CIRCUITS CIRCUIT V ALUES TEST W A VEFORMS

NOTE

PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1

5 V PW DUTY CYCLE ≤ 10%

tr, tf ≤ 10 ns 68 1 k 0.001 µF

0.02 µF 1N4933

270 + 5 V

1 k 2N2905

47 1/2 W

100 – VBE(off) MJE200

T.U.T.

IB RB 1N4933 1N4933 33

33 2N2222

1 k

MJE210

VCC + 5 V

L

IC

MR826*

Vclamp

*SELECTED FOR ≥ 1 kV VCE

5.1 k 51

+125 V

RC SCOPE

– 4.0 V D1 RB

TUT

t1 ADJUSTED TO OBTAIN IC t1 ≈ Lcoil (ICpk)

VCC t2 ≈ Lcoil (ICpk)

Vclamp

+10 V 25 µs

0 – 8 V Coil Data:

Ferroxcube Core #6656 Full Bobbin (~16 Turns) #16

GAP for 200 µH/20 A

Lcoil = 200 µH VCC = 20 V

Vclamp = 300 Vdc

VCC = 125 V RC = 62 Ω

D1 = 1N5820 or Equiv.

RB = 22 Ω

Test Equipment Scope–Tektronics 475 or Equivalent

tr, tf < 10 ns Duty Cycle = 1.0%

RB and RC adjusted for desired IB and IC t1

IC

VCE

TIME IC(pk)

VCE or Vclamp

t2 t

t tf

tf CLAMPED

tf UNCLAMPED ≈ t2

Table 2. Test Conditions for Dynamic Performance

1 0.01 0.01 0.7

0.2 0.1

0.05

0.02 r(t) , TRANSIENT THERMAL RESIST ANCE

0.05 1 2 5 10 20 50 100 200 500

Z θJC(t) = r(t) RθJC R θJC = 1.67 °C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) Z θ JC(t)

P(pk)

t1 t2

DUTY CYCLE, D = t1/t2 D = 0.5

0.2

0.05 0.01 SINGLE PULSE

0.1 0.2 0.5

(NORMALIZED)

1 k 0.5

0.3

0.07

0.03 0.02 0.1

0.02

(6)

The Safe Operating Area Figures 11 and 12 are specified ratings for these devices under the test conditions shown.

I C(pk)

, COLLECT OR CURRENT (AMP)

I C , COLLECT OR CURRENT (AMP) 5 ms 500 µ s

1 ms dc

10

7 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 0.02

10 400 2

1 5

0.5 0.1 0.05

30 50 70 100

Figure 11. Forward Bias Safe Operating Area

Figure 12. Reverse Bias Switching Safe Operating Area 0.2

0.01 300 500 MJE13005

5 20

4

0 800 1

100 300

TC ≤ 100 ° C IB1 = 2.0 A

500 700

VBE(off) = 9 V

0 2

VCE, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS) 3

200 400 600

MJE13005 5 V

3 V 200

1.5 V

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate.

The data of Figure 11 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25 _ C. Second breakdown limitations do not der- ate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case tem- perature by using the appropriate curve on Figure 13.

TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current conditions during re- verse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an ava- lanche mode. Figure 12 gives the complete RBSOA charac- teristics.

0 40 120 160

0.6 POWER DERA TING F ACT OR

SECOND BREAKDOWN DERATING 1

0.8

0.4

0.2 60 80 100 140

THERMAL DERATING

20

(7)

MJE13005 PACKAGE DIMENSIONS

CASE 221A–06 TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

STYLE 1:

PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM MIN MAX MIN MAX

MILLIMETERS INCHES

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27

V 0.045 ––– 1.15 –––

Z ––– 0.080 ––– 2.04

B

Q

H

Z

L V

G

N A

K F

1 2 3 4

D

SEATING PLANE

–T–

C T S

U

R

J

(8)

How to reach us:

USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

MJE13005-2

     

   

  !  

SPECIFICATION FEATURES:

• VCEO(sus) 400 V

• Reverse Bias SOA with Inductive Loads @ TC = 100_ C

• Inductive Switching Matrix 2 to 4 Amp, 25 and 100 _ C . . . tc @ 3A, 100_ C is 180 ns (Typ)

• 700 V Blocking Capability

• SOA and Switching Applications Information.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO(sus)

400

Vdc

Collector–Emitter Voltage

VCEV

700

Vdc

Emitter Base Voltage

VEBO

9

Vdc

Collector Current — Continuous

— Peak (1)

IC ICM

4 8

Adc

Base Current — Continuous

— Peak (1)

IB IBM

2 4

Adc

Emitter Current — Continuous

— Peak (1)

IE IEM

6 12

Adc

Total Power Dissipation @ TA = 25_ C Derate above 25 _ C

PD

2 16

Watts mW/ _ C

Total Power Dissipation @ TC = 25_ C Derate above 25 _ C

PD

75 600

Watts mW/ _ C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 150

_ C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R θJA

62.5

_ C/W

Thermal Resistance, Junction to Case

R θJC

1.67

_ C/W

Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds

TL

275

_ C



SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE13005/D

 

4 AMPERE NPN SILICON POWER TRANSISTOR

400 VOLTS 75 WATTS

*Motorola Preferred Device

CASE 221A–06

TO–220AB



!

ELECTRICAL CHARACTERISTICS _{(TC = 25_} C unless otherwise noted)