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BAW101

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MAXIMUM RATINGS: (TA=25°C)

SYMBOL UNITS

Continuous Reverse Voltage VR 300 V

Peak Repetitive Reverse Voltage VRRM 300 V

Continuous Forward Current IF 200 mA

Peak Repetitive Forward Current IFRM 500 mA

Forward Surge Current, tp=1 µs IFSM 4.5 A

Power Dissipation PD 350 mW

Operating and Storage

Junction Temperature TJ,Tstg -65 to +150 °C

Thermal Resistance ΘJA 357 °C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

IR VR=250V 150 nA

IR VR=250V, TA=150°C 50 µA

BVR IR=100µA 300 V

VF IF=100mA 0.9 1.3 V

CT VR=0V, f=1.0 MHz 5.0 pF

trr IF=IR=30mA, Irr=3.0mA, RL=100Ω 50 ns

BAW101

DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES

SOT-143 CASE

Central

Semiconductor Corp.

TM

R3 (13-November 2002) DESCRIPTION:

The CENTRAL SEMICONDUCTOR BAW101 type is a Silicon Dual Isolated High Voltage Switching diode designed for surface mount switching applications requiring high voltage capabilities.

MARKING CODE: CJP

(2)

Central

Semiconductor Corp.

TM

SOT-143 CASE - MECHANICAL OUTLINE

BAW101

DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES

R3 (13-November 2002) LEAD CODE:

1) CATHODE 1 2) CATHODE 2 3) ANODE 2 4) ANODE 1

MARKING CODE: CJP

Cytaty

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