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SCS THOMSON

HDO^©[E[Li(g¥^Co)iOOi

TIP 120 - 121-122 TIP 125 - 126-127

POWER DARLINGTONS

DESCRIPTION

The TIP120, TIP121 and TIP122 are silicon epi­

taxial-base NPN transistors in monolithic Darlington configuration in Jedec TO-220 plastic package, in­

tended for use in power linear and switching appli­

cations. The complementary PNP types are the TIP125, TIP126 and TIP127 respectively.

INTERNA L SC HEMATIC DIAGRAMS

ABSOLUTE MAXIMUM RATINGS

Symbol P ar a m e te r NPN

PNP*

Value

Unit T I P 1 2 0

T I P 1 2 5

TI P1 21 T I P 1 2 6

T I P 1 2 2 T I P 1 2 7

Vcbo Collector-base Voltage (Ie = 0 ) 60 80 100 V

Vceo Collector-emitter Voltage (Ib = 0) 60 80 100 V

Vebo Emitter-base Voltage (lc = 0) 5 V

•c Collector Current 5 A

ICM Collector Peak Current 8 A

Ib Base Current 0.1 A

P tot Total Power Dissipation at T case ^ 25 °C T amb — 25°C

65 2

W W

Tstg Storage Temperature - 65 to 150 °C

T, Junction Temperature 150 °C

* For PNP types voltage and current values are negative.

November 1988 1/5

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THERMAL DATA

Rth j-case

Thermal Resistance Junction-case Max 1.92 cc / w

Rth j-amb

Thermal Resistance Junction-ambient Max 62.5 ” C/W

ELECTRICAL CHARACTERISTICS (Toase = 25 °C unless otherwise specified)

Symbol P ar am e te r T e st Conditions Min. Typ. Max. Unit

I CEO Collector Cutoff Current for TIP1 20 /5 VCE = 30 V 0.5 mA

(Is = 0 ) for T I P 1 21 /6 VCE = 40 V 0.5 mA

for Tl P1 22/7 VCE = 50 V 0.5 mA

ICBO Collector Cutoff Current for T I P 1 20 /5 Vcb = 60 V 0.2 mA

(Ie = 0 ) for T I P I 21 /6 VCB = 80 V 0.2 mA

for TIP1 22 /7 VCB = 1 0 0 V 0.2 mA

Iebo Emitter Cutoff Current

(lc = 0 ) V EB = 5 V 2 mA

VcEO(sus)* Collector-emitter Sustaining lc = 30 mA

Voltage ( lB = 0) for T I P 1 20 /5 60 V

for Tl P I 21 /6 80 V

for TIP1 22 /7 100 V

VcE(sat)' Collector-emitter Saturation lc = 3 A l B = 12 mA 2 V

Voltage lc = 5 A l B = 2 0 mA 4 V

VBE(on)* Base-emitter Voltage lc = 3 A < O m II CO < 2.5 V

h FE* DC current Gain lc = 0 .5 A VCE = 3 V 1000

lc = 3 A VCE = 3 V 1000 Pulsed : pulse duration = 300 ps, duty cycle < 2 %.

Safe Operating Areas. DC Current Gain (NPN types).

57

SGS-THOMSON

MCBBailCmMCS

2'5

(3)

DC Current Gain (PNP types). Collector-emitter Saturation Voltage (NPN types).

Collector-emitter Saturation Voltage (NPN types). Base-emitter Saturation Voltage (NPN types).

Base-emitter Saturation Voltage (PNP types).

G-M(7

Base-emitter Voltage (NPN types).

G -SG 6t

SGS-THOMSON 3/5

(4)

Base-emitter Voltage (PNP types). Freewheel Diode Forward Voltage (NPN types).

«•* 1 lc (A1

0-6*70

Freewheel Diode Forward Voltage (PNP types).

6-4671

Switching Times vs. Tease Resistive Load

(NPN types). 6-4T

Switching Times vs. Tcase Resistive Load (PNP types).

G-W)

Derating Curve.

G-%n

51

SGS-THOMSON

G90{lCn®fSU9C[m®OI9DCS 4/5

(5)

-ree-air Temperature Derating Curve.

0 75 50 75 100 125 ISO T4mbfC)

r r : s g s-t h o m s o n

^ 7 # mcmSUSCmm^S

5/5

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