SKM200GB124

V_CES V_CGR I_C I_CM V_GES P_tot T_j, (T_stg) V_isol humidity climate

R_GE = 20 kΩ

T_case = 25/85 °C

T_case = 25/85 °C; t_p = 1 ms

per IGBT, T_case = 25 °C

AC, 1 min.

DIN 40040 DIN IEC 68 T.1

1200 1200 290 / 200 580 / 400

± 20 1350 –40 ... +150 (125)

2500 Class F 40/125/56

V V A A V W

°C V

Inverse Diode I_F = –I_C I_FM = –I_CM I_FSM I²t

T_case = 25/80 °C

T_case = 25/80 °C; t_p = 1 ms t_p = 10 ms; sin.; T_j = 150 °C t_p = 10 ms; T_j = 150 °C

195 / 130 580 / 400

1450 10 500

A A A A²s

Characteristics

Symbol Conditions ¹⁾ min. typ. max. Units

V_(BR)CES V_GE(th) I_CES

I_GES V_CEsat V_CEsat g_fs

V_GE = 0, I_C = 4 mA V_GE = V_CE, I_C = 6 mA V_GE = 0 T_j = 25 °C V_CE = V_CES T_j = 125 °C V_GE = 20 V, V_CE = 0 I_C = 150 A V_GE = 15 V;

I_C = 200 A T_j = 25 (125) °C V_CE = 20 V, I_C = 150 A

≥ ^VCES

4,5 – – – – – 62

– 5,5 0,4 12 – 2,1(2,4) 2,5(3,0)

–

– 6,5

14 – 0,32 2,45(2,85)

– –

V V mA mA µA V V S CCHC

C_ies C_oes C_res L_CE

per IGBT V_GE = 0 V_CE = 25 V f = 1 MHz

– – – – –

– 11 1,6 0,8 –

700 15

2 1 20

pF nF nF nF nH t_d(on)

t_r t_d(off) t_f E_on E_off

V_CC = 600 V

V_GE = –15 V / +15 V³⁾ I_C = 150 A, ind. load R_Gon = R_Goff = 7Ω

T_j = 125 °C

– – – – – –

75 50 520

50 21 19

– – – – – –

ns ns ns ns mWs mWs Inverse Diode ⁸⁾

V_F = V_EC V_F = V_EC V_TO r_t I_RRM Q_rr

I_F = 150 A V_GE = 0 V;

I_F = 200 A T_j = 25 (125) °C T_j = 125 °C ²⁾

T_j = 125 °C ²⁾

I_F = 150 A; T_j = 125 °C²⁾ I_F = 150 A; T_j = 125 °C²⁾

– – – – – –

2,0(1,8) 2,25(2,05)

1,1 – 78 19,5

2,5 – 1,2

7 – –

V V V mΩ

A µC Thermal characteristics

R_thjc R_thjc R_thch

per IGBT per diode per module

– – –

– – –

0,09 0,25 0,038

°C/W

°C/W

°C/W

SKM 200 GB 124 D

Features

• MOS input (voltage controlled)

• N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)

• Low saturation voltage

• Low inductance case

• Low tail current with low temperature dependence

• High short circuit capability, self limiting to 6 * Icnom

• Latch-up free

• Fast & soft inverse CAL diodes ⁸⁾

• Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould

• Large clearance (12 mm) and creepage distances (20 mm) Typical Applications → B 6 – 161

• Switching (not for linear use)

• Inverter drives

• UPS

1)T_case = 25 °C, unless otherwise specified

2)I_F = – I_C, V_R = 600 V,

–di_F/dt = 1500 A/µs, V_GE = 0 V

3)Use V_GEoff = –5... –15 V

8)CAL = Controlled Axial Lifetime Technology

Cases and mech. data

→ B 6 – 162 GB

SEMITRANS 3

SKM 200 GB 124 D

M200G124.X LS -6

0 2 4 6 8 10 12

0 200 400 600 800 1000 1200 1400

V_CE V

I_CSC/I_C

allowed numbers of short circuits: <1000

time between short circuits: >1s

di/dt= 1000 A/µs 3000 A/µs 5000 A/µs

M200G124.X LS -5

0 0,5 1 1,5 2 2,5

0 200 400 600 800 1000 1200 1400

V_CE V

ICpuls/IC

M200G124.X LS -4

1 10 100 1000

1 V_CE 10 100 1000 V 10000

I_C

A t_p=10µs

100µs

1ms

10ms

M200G124.X LS -3

0 10 20 30 40 50 60 70 80 90

0RG 10 20 30 40 50 Ω 60

E mWs

E_on

E_off

M200G124.X LS -2

0 10 20 30 40 50 60 70

0 50 100 150 200 250 300 350

I_C A

E

mWs E_on

E_off

M200G124.X LS -1

0 200 400 600 800 1000 1200 1400

0 20 40 60 80 100 120 140 160

T_C °C

P_tot W

Fig. 3 Turn-on /-off energy = f (R_G) Fig. 4 Maximum safe operating area (SOA) I_C = f (V_CE) Fig. 1 Rated power dissipation Ptot = f (TC) Fig. 2 Turn-on /-off energy = f (IC)

Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit IC = f (VCE) Tj = 125 °C V_CE = 600 V VGE = + 15 V R_G = 7 Ω

1 pulse T_C = 25 °C T_j ≤ 150 °C T_j = 125 °C

VCE = 600 V V_GE = + 15 V IC = 150 A

T_j≤ ^{150 °C} V_GE = ± 15 V t_sc≤ ^{10 µs} L < 25 nH I_C = 150 A T_j ≤ 150 °C

VGE = 15 V R_Goff = 7 Ω IC = 150 A

Not for linear use

M200G124.X LS -12

0 50 100 150 200 250 300

0 2 4 6 8 10 12 14

V_GE V

I_C A

M 20 0G1 24 .X LS -1 0

0 50 100 150 200 250 300

0 V_CE 1 2 3 4 V 5

I_C A

17V 15V 13V 11V 9V 7V

M2 0 0G1 24 .X LS -9

0 50 100 150 200 250 300

0 VCE 1 2 3 4 V 5

IC A

17V 15V 13V 11V 9V 7V

0 50 100 150 200 250

0 40 80 120 160

T_C °C

I_C

P_cond(t) = V_CEsat(t) · I_C(t)

VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) · IC(t)

V_CE(TO)(Tj)≤ 1,3 + 0,0005 (T_j –25) [V]

typ.: rCE(Tj) = 0,0053 + 0,000017 (Tj –25) [Ω] max.: rCE(Tj) = 0,0077 + 0,000023 (Tj –25) [Ω]

valid for V_GE = + 15 [V]; I_C > 0,3 I_Cnom

Fig. 9 Typ. output characteristic, t_p = 80 µs; 25 °C Fig. 10 Typ. output characteristic, t_p = 80 µs; 125 °C Fig. 8 Rated current vs. temperature I_C = f (T_C)

+2–1

Fig. 11 Saturation characteristic (IGBT)

Calculation elements and equations Fig. 12 Typ. transfer characteristic, t_p = 80 µs; V_CE = 20 V

SKM 200 GB 124 D

M200G124.X LS -18

0 2 4 6 8 10

0 40 80 120 160 200 240

I_F A

E_offD mJ

17 Ω 10 Ω

40 Ω 6 Ω R_G= 4 Ω

M200GB 124.X LS -17

0 50 100 150 200

0 1 2 3

V_F V

IF A

T_j=125°C, typ.

T_j=25°C, typ.

T_j=125°C, max.

Tj=25°C, max.

M200G124.X LS -16

10 100 1000 10000

0 10 20 30 40 50 60

R_G Ω

t ns

t_doff

t_don

t_r

t_f

M200G124.X LS -15

10 100 1000

0 50 100 150 200 250 300 350

I_C A

t

ns t_doff

t_don

t_r

t_f

M200G124.X LS -14

0,1 1 10 100

0 V_CE 10 20 V 30

C nF

C_ies

C_oes

C_res

M200G124.X LS -13

0 2 4 6 8 10 12 14 16 18 20

0 200 400 600 800 1000 1200

Q_Gate nC

V_GE V

600V 800V

Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.V_CE

V_GE = 0 V f = 1 MHz

Fig. 15 Typ. switching times vs. I_C Fig. 16 Typ. switching times vs. gate resistor R_G

Fig. 17 Typ. CAL diode forward characteristic Fig. 18 Diode turn-off energy dissipation per pulse

T_j = 125 °C VCE = 600 V V_GE = ± 15 V IC = 150 A induct. load R_thjc = 0,005

ICpuls = 150 A

T_j = 125 °C VCE = 600 V V_GE = ± 15 V RGon = 7 Ω R_Goff = 7 Ω induct. load

VCC = 600 V T_j = 125 °C VGE = ± 15 V

M2 0 0G1 24 .X LS -2 4

0 5 10 15 20 25 30 35

0 2000 4000 6000 8000

di_F/dt A/µs

Q_rr µC

IF=

150 A 110 A

75 A

40 A 17 Ω

10 Ω 40 Ω

6 Ω R_G=4 Ω 200 A

M200G124.X LS -23

0 40 80 120 160 200 240 280

0 1000 2000 3000 4000 5000 6000 7000

di_F/dt A/µs

IRR A

17 Ω 10 Ω

40 Ω

6 Ω R_G= 4 Ω

M200G124.X LS -22

0 40 80 120 160 200 240 280

0 40 80 120 160 200 240

IF A

I_RR A

17 Ω 10 Ω 40 Ω 6 Ω RG=

4 Ω 0,0001

0,001 0,01 0,1

0,00001 0,0001 0,001 0,01 0,1 1

t_p s

Z_thJC

D=0,50 0,20 0,10 0,05 0,02 0,01 single pulse

0,0001 0,001 0,01 0,1

0,00001 0,0001 0,001 0,01 0,1 1 s Z_thJC

D=0,5 0,2 0,1 0,05 0,02 0,01 single pulse

t_p

Fig. 19 Transient thermal impedance of IGBT Z_thJC = f (t_p); D = t_p / t_c = t_p · f

Fig. 20 Transient thermal impedance of

inverse CAL diodes Z_thJC = f (t_p); D = t_p / t_c = t_p · f

Fig. 22 Typ. CAL diode peak reverse recovery current I_RR = f (I_F; R_G)

Fig. 23 Typ. CAL diode peak reverse recovery current I_RR = f (di/dt)

Fig. 24 Typ. CAL diode recovered charge Typical Applications

include

Switched mode power supplies DC servo and robot drives Inverters

DC choppers

AC motor speed control

UPS Uninterruptable power supplies General power switching applications Electronic (also portable) welders

V_CC = 600 V T_j = 125 °C V_GE = ± 15 V

V_CC = 600 V T_j = 125 °C V_GE = ± 15 V I_F = 150 A

V_CC = 600 V T_j = 125 °C VGE = ± 15 V

SKM 200 GB 124 D

SEMITRANS 3 Case D 56 UL Recognized File no. E 63 532

SKM 200 GB 124 D

Dimensions in mm

Case outline and circuit diagram

Mechanical Data

Symbol Conditions Values Units

min. typ. max.

M₁

M₂

a w

to heatsink, SI Units (M6) to heatsink, US Units

for terminals, SI Units (M6) for terminals, US Units

3 27 2,5 22 – –

– – – – – –

5 44

5 44 5x9,81

325

Nm lb.in.

Nm lb.in.

m/s² g

This is an electrostatic discharge sensitive device (ESDS).

Please observe the international standard IEC 747-1, Chapter IX.

Three devices are supplied in one SEMIBOX A without mounting hardware, which can be ordered separately under Ident No.

33321100 (for 10 SEMITRANS 3).

Larger packing units of 12 and 20 pieces are used if suitable

Accessories → B 6 – 4.

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