<z3E,ml-L.onauctoi i, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
2N3773, 2N4348, 2N6259
Hometaxial-Base, High-Current Silicon N-P-N Transistors
Rugged High Voltage Devices for Applications in Industrial and Commercial Equipment
These typei are hometaxial-b»se silicon n-p-n tran- sition intended for a wide variety of high-voltage high- current applications. Typical applications for these tran- sistors include power-switching circuits, audio amplifiers, series- and shunt-regulator driver and output stages, dc-to-dc
converters, inverters, and solenoid (hammeO/relay driver service:
These devices employ the popular JEDEC TO 3 package;
they differ in maximum ratings for voltage, current, and power.
Features:
• High dissipation capability -
120 W I2N4348), 150 W (2N3773), 250 W (2N6269)
• 5 A specification for hFE, VfjE. & VCE<»«> (2N4348)
• 8-A specification for
hFE, VBE. & VcE(Mt) (2N3773. 2N6259)
140 V min I2N4348). 160 V min (2N3773) 170 V min (2N6259)
• Low saturation voltaga with high beta
TERMINAL DESIGNATIONS
MAXIMUM RATINGS. Absolute Minimum Values:
•COLLECTOR-TO-BASE VOLTAGE COLLECTOR TO EMITTER VOLTAGE
" With base open
With reverse bias !VBE> ol -1.5 V
"EMITTER TO-BASE VOLTAGE
"COLLECTOR CURRENT' Continuous Peak
"BASE CURRENT:
Continuous . , . . . , , . . . . , , . . . Peak
"TRANSISTOR DISSIPATION:
At case temperatures up to 25°C At case temperatures above 25°C
"TEMPERATURE RANGE:
Storage & Operating (Junction) . . . .
"PIN TEMPERATURE (During Soldering!:
At distances > 1/3? in. (0,8 mm) from case for II
VCEO VCEX
IB FT
2N434B 140
120 140 7
10 30
4 IS
2N3773 160
140 160
16 30
4 IS
2N62S9 170
150 170
16 30
4 IS
120 150 250 Orate ljn«Arly ta 200*0
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qualify Semi-Conductors
ELECTRICAL CHARACTERISTICS, At Case Temperature ( ! = 25°C Unless Otherwise Specified
CHARACTERISTIC
SoHactor-Cutoff Current:
With emitter open, VCB= 1 40 V
With base emitter junction reverie biased
With base-emitter junction reverse biased andTc = 150°C
With bate open
Emitter-Cutoff Current
DC Forward Current Transfer Ratio
Collector-to-Emitter Sustaining Voltage;
With base-emitter junction reverse- biased IR0E 10OiJ) With external base-to-emntef
resistance (RBE* " tOOii With base open
Jase to Emitier Voltage
Collector-To Emitter Saturation Voltage
Second- BieaV down Collector Current With base forward-biased and
1 -s nomepet'tive pulse Second Breakdown Eneigy
With base reverse-biased and L = 40 mH, RBE - 100SI Magnitude of Common EmillPr.
Small-Signal, Short Cucun.
Forward Currenl Transter Ratio If * 50kHz!
Common-Emitter, Small Signal. Short-Circuit.
Forward Current Transfer Ratio (f = 1 kHz)
Thermal Resistance junction-io-Case
SYMBOL
•ceo
'CEX
'CEX
'CEO
IEBO
h
FEVCEX**
U S'
V c £R( f t u s )
VCEOlsusl
VflE
vCF< t i a''
'S/hb
ES'hc
|Hfe|
h
ft
R,JC
TEST CONDITIONS
VOLTAGE V dc
VCE
120 110 150 120 140 150 100 170
4 4 2 4 4
4 4
? 4
SO 100
4
4
VBE
- ,5 - .5 - .5 b - .5 - .6
-^
1 5
. 1.5 CURRENT
A dc
'C
0
6»
8»
8»
10»
16»
O.I
0 2 »
0 2 » 5»
Ba
8"
10»
&»
8»
10' 16»
2.5
1
l 'B
0
0 6 O R 1 75 j 2
LIMITS
2N434B
Mm.
15
10
140
140
120
-
1 5
0 \K
t
40 Max.
-
1
10
20
5
60
7
3
1
?
1 46 2N3773
Min.
-
15
5
160
.150 140
-
1 5
0 \K
t
40 M»x
2
?
10
10
5
60
2 7
1 4
4
1 1 7 2N6259 Mm.
-
15
10
i ;o
160
150
1 5
0 125
4
40 Mix.
0.2
4
2
7
60
7
1
2 5
0 7 UNITS
mfl
mA
mA
mA
mA
V
V
V
V
V
A
.1
°C/W