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<z3E,ml-L.onauctoi i, Line.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

2N3773, 2N4348, 2N6259

Hometaxial-Base, High-Current Silicon N-P-N Transistors

Rugged High Voltage Devices for Applications in Industrial and Commercial Equipment

These typei are hometaxial-b»se silicon n-p-n tran- sition intended for a wide variety of high-voltage high- current applications. Typical applications for these tran- sistors include power-switching circuits, audio amplifiers, series- and shunt-regulator driver and output stages, dc-to-dc

converters, inverters, and solenoid (hammeO/relay driver service:

These devices employ the popular JEDEC TO 3 package;

they differ in maximum ratings for voltage, current, and power.

Features:

• High dissipation capability -

120 W I2N4348), 150 W (2N3773), 250 W (2N6269)

• 5 A specification for hFE, VfjE. & VCE<»«> (2N4348)

• 8-A specification for

hFE, VBE. & VcE(Mt) (2N3773. 2N6259)

140 V min I2N4348). 160 V min (2N3773) 170 V min (2N6259)

• Low saturation voltaga with high beta

TERMINAL DESIGNATIONS

MAXIMUM RATINGS. Absolute Minimum Values:

•COLLECTOR-TO-BASE VOLTAGE COLLECTOR TO EMITTER VOLTAGE

" With base open

With reverse bias !VBE> ol -1.5 V

"EMITTER TO-BASE VOLTAGE

"COLLECTOR CURRENT' Continuous Peak

"BASE CURRENT:

Continuous . , . . . , , . . . . , , . . . Peak

"TRANSISTOR DISSIPATION:

At case temperatures up to 25°C At case temperatures above 25°C

"TEMPERATURE RANGE:

Storage & Operating (Junction) . . . .

"PIN TEMPERATURE (During Soldering!:

At distances > 1/3? in. (0,8 mm) from case for II

VCEO VCEX

IB FT

2N434B 140

120 140 7

10 30

4 IS

2N3773 160

140 160

16 30

4 IS

2N62S9 170

150 170

16 30

4 IS

120 150 250 Orate ljn«Arly ta 200*0

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Qualify Semi-Conductors

(2)

ELECTRICAL CHARACTERISTICS, At Case Temperature ( ! = 25°C Unless Otherwise Specified

CHARACTERISTIC

SoHactor-Cutoff Current:

With emitter open, VCB= 1 40 V

With base emitter junction reverie biased

With base-emitter junction reverse biased andTc = 150°C

With bate open

Emitter-Cutoff Current

DC Forward Current Transfer Ratio

Collector-to-Emitter Sustaining Voltage;

With base-emitter junction reverse- biased IR0E 10OiJ) With external base-to-emntef

resistance (RBE* " tOOii With base open

Jase to Emitier Voltage

Collector-To Emitter Saturation Voltage

Second- BieaV down Collector Current With base forward-biased and

1 -s nomepet'tive pulse Second Breakdown Eneigy

With base reverse-biased and L = 40 mH, RBE - 100SI Magnitude of Common EmillPr.

Small-Signal, Short Cucun.

Forward Currenl Transter Ratio If * 50kHz!

Common-Emitter, Small Signal. Short-Circuit.

Forward Current Transfer Ratio (f = 1 kHz)

Thermal Resistance junction-io-Case

SYMBOL

•ceo

'CEX

'CEX

'CEO

IEBO

h

FE

VCEX**

U S

'

V c £R( f t u s )

VCEOlsusl

VflE

vCF< t i a''

'S/hb

ES'hc

|Hfe|

h

ft

R,JC

TEST CONDITIONS

VOLTAGE V dc

VCE

120 110 150 120 140 150 100 170

4 4 2 4 4

4 4

? 4

SO 100

4

4

VBE

- ,5 - .5 - .5 b - .5 - .6

-^

1 5

. 1.5 CURRENT

A dc

'C

0

10»

16»

O.I

0 2 »

0 2 » 5»

Ba

8"

10»

10' 16»

2.5

1

l 'B

0

0 6 O R 1 75 j 2

LIMITS

2N434B

Mm.

15

10

140

140

120

-

1 5

0 \K

t

40 Max.

-

1

10

20

5

60

7

3

1

?

1 46 2N3773

Min.

-

15

5

160

.150 140

-

1 5

0 \K

t

40 M»x

2

?

10

10

5

60

2 7

1 4

4

1 1 7 2N6259 Mm.

-

15

10

i ;o

160

150

1 5

0 125

4

40 Mix.

0.2

4

2

7

60

7

1

2 5

0 7 UNITS

mfl

mA

mA

mA

mA

V

V

V

V

V

A

.1

°C/W

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