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BUX20

SGS-THOMSON

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR

DESCRIPTION

The BUX20 is a silicon multi epitaxial planar NPN transistor in modified JedecTO-3 metal case, inten­

ded for use in switching and linear applications in military and industrial equipment.

ABSOLUTE M AXIMUM RATINGS

S y m b o l P a r a m e t e r V a l u e U n i t

VcBO Collector-base Voltage (Ie =0) 160 V

VcEX Collector-emitter Voltage (Vbe = - 1 . 5 V) 160 V

VcEO Collector-emitter Voltage (Ib = 0) 125 V

Vebo Emitter-base Voltage (lc = 0) 7 V

lc Collector Current 50 A

IcM Collector Peak Current (tp =10 ms) 60 A

Ib Base Current 10 A

P tot Total Power Dissipation at T caSe £ 25 °C 350 W

Tstg Storage Temperature - 65 to 200 °C

Ti Junction Temperature 200 °C

December 1988 1/4

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BUX20

THERMAL DATA

Rth j-case Thermal Resistance Junction-case Max 0.5 °C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

S y m b o l P a r a m e t e r T e s t C o n d i t i o n s M i n . T y p . M a x . U n i t

IcEO Collector Cutoff Current

(Ib- 0 ) Vce= 100 V 3 mA

ICEX Collector Cutoff Current Vc e = 160 V Vb e = - 1.5 V Tcase =125 °C Vb e - - 1 . 5 V

VCE = 160 V

3 12

mA mA

Ie b o Emitter Cutoff Current

(lc = 0) VEB = 5 V 1 mA

VcEO(sus)* Collector-emitter Sustaining

Voltage lc = 200 mA 125 V

Ve b o Emitter-base Voltage (lc = 0) Ie = 50 mA 7 V

VcE(sat)* Collector-emitter Saturation

Voltage oo IIII cnw OU1 >> CD~ oT II II cnpo >cn > 0.3 0.55

0.6 1.2

V V VBE(sat)* Base-emitter Saturation

Voltage lc = 50 A Is = 5 A 1.35 2 V

h F E * DC Current Gain lc = 25 A Vce= 2 V

lc = 50 A Vce= 4 V

20 10

60

U / b Second Breakdown Collector

Current

<0W

II II

>>

oo^CMII II

oo>> 1.5

17.5

A A f i Transition Frequency Vce= 15 V lc = 2 A

f = 10 MHz 8 MHz

ton Turn-on Time (fig. 2) lc =50 A l Bi = 5 A

Vce = 60 V 0.4 1.5 ps

t, Storage Time (fig. 2) lc = 50 A IB1 = 5 A I b2 = — 5 A Vce = 60 V

0.85 1.2 ps

tf Fall Time (fig. 2) 0.1 0.3 (IS

Clamped E s /b Collector Current (fig. 1)

V c la m p =125 V

L = 500 pH 50 A

* Pulsed : pulse duration = 300ps, duty cycle < 2%.

Safe Operating Areas. Derating Curves.

0 50 100 150 Tc a s e CC)

2/4 r z7 SCS-THOMSON

KHcrnsLacnaewcs

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BUX20

nermal Transient Response.

W 5 K>-4 to -* K H :0 -' T(s*c)

Collector-emitter Saturation Voltage.

DC Current Gain.

Collector-emitter Saturation Voltage.

0 2 6 6 8 10 (* )

Base-emitter Saturation Voltage.

6

-

191

*

G- 1913

!

-3C 25*C—

125*C -

S

1 * *>

9

’ - « >

9

» K> I C (A )

Saturated Switching Characteristics.

57

SGS-THOMSON

MCRimilOTHiMSe*

3/4

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BUX20

Saturated Switching Characteristics.

6-3316

Transition Frequency.

G- 42 08

t E * ’ 5 * f = 10 M H z

101 1 l c (A )

Collector-base Capacitance.

6-3917

Clamped Reverse Bias Safe Operating Area.

Figure 1 : Clamped Es/b Test Circuit. Figure 2 : Switching Times Test Circuit (resistive load).

40 V

f ZT SGS THOMSON

^ 7 # maMeUBBVMmB*

4/4

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