BUP200

(1)

IGBT

Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Avalanche rated

Pin 1 Pin 2 Pin 3

G C E

Type V_CE I_C Package Ordering Code

BUP 200 1200V 3.6A TO-220 AB Q67078-A4400-A2

Maximum Ratings

Parameter Symbol Values Unit

Collector-emitter voltage V_CE 1200 V

Collector-gate voltage R_GE = 20 kΩ

V_CGR

1200

Gate-emitter voltage V_GE ± 20

DC collector current T_C = 25 °C

T_C = 90 °C

I_C

2.4 3.6

A

Pulsed collector current, t_p = 1 ms T_C = 25 °C

T_C = 90 °C

I_Cpuls

4.8 7.2

Avalanche energy, single pulse I_C = 1.5 A, V_CC = 50 V, R_GE = 25 Ω L = 3.3 mH, T_j = 25 °C

E_AS

3.5

mJ

Power dissipation T_C = 25 °C

P_tot

50

W

Chip or operating temperature T_j -55 ... + 150 °C

Storage temperature T_stg -55 ... + 150

(2)

Semiconductor Group 2 Dec-06-1995 Maximum Ratings

DIN humidity category, DIN 40 040 - E -

IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 Thermal Resistance

IGBT thermal resistance, chip case R_thJC ≤ 3.1 K/W

Electrical Characteristics, at T_j = 25 °C, unless otherwise specified

min. typ. max.

Static Characteristics Gate threshold voltage V_GE = V_CE,I_C = 0.1 mA

V_GE(th)

4.5 5.5 6.5

V

Collector-emitter saturation voltage V_GE = 15 V, I_C = 1.5 A, T_j = 25 °C V_GE = 15 V, I_C = 1.5 A, T_j = 125 °C V_GE = 15 V, I_C = 1.5 A, T_j = 150 °C

V_CE(sat)

- - -

4 3.8 2.8

4.5 4.3 3.3

Zero gate voltage collector current V_CE = 1000 V, V_GE = 0 V, T_j = 25 °C V_CE = 1000 V, V_GE = 0 V, T_j = 125 °C

I_CES

- -

- 1

100 25

µA

Gate-emitter leakage current V_GE = 20 V, V_CE = 0 V

I_GES

- 0.1 100

nA

AC Characteristics Transconductance V_CE = 20 V, I_C = 1.5 A

g_fs

- 0.6 -

S

Input capacitance

V_CE = 25 V, V_GE = 0 V, f = 1 MHz

C_iss

- 225 320

pF

Output capacitance

V_CE = 25 V, V_GE = 0 V, f = 1 MHz

C_oss

- 25 40

Reverse transfer capacitance V_CE = 25 V, V_GE = 0 V, f = 1 MHz

C_rss

- 13 24

(3)

Electrical Characteristics, at T_j = 25 °C, unless otherwise specified

min. typ. max.

Switching Characteristics, Inductive Load at T_j = 125 °C Turn-on delay time

V_CC = 600 V, V_GE = 15 V, I_C = 1.5 A R_Gon = 100 Ω

t_d(on)

- 30 50

ns

Rise time

V_CC = 600 V, V_GE = 15 V, I_C = 1.5 A R_Gon = 100 Ω

t_r

- 20 30

Turn-off delay time

V_CC = 600 V, V_GE = -15 V, I_C = 1.5 A R_Goff = 100 Ω

t_d(off)

- 170 250

Fall time

t_f

- 15 25

Total turn-off loss energy

E_off

- 0.25 -

mWs

(4)

Semiconductor Group 4 Dec-06-1995 Power dissipation

P_tot = ƒ(T_C)

parameter: T_j≤ 150 °C

0 20 40 60 80 100 120 °C 160

T_C 0

5 10 15 20 25 30 35 40 45 W 55

Ptot

Collector current I_C = ƒ(T_C)

parameter: V_GE ≥ 15 V , T_j≤ 150 °C

0 20 40 60 80 100 120 °C 160

T_C 0.0

0.4 0.8 1.2 1.6 2.0 2.4 2.8 A 3.6

IC

Safe operating area I_C = ƒ(V_CE)

parameter: D = 0, T_C = 25°C , T_j≤ 150 °C

10 -2 10 -1 10 0 10 1

A IC

10 ⁰ 10 ¹ 10 ² 10 ³ V

V_CE DC

10 ms 1 ms 100 µs 10 µs

tp = 4.5µs

Transient thermal impedance IGBT Z_{th JC} = ƒ(t_p)

parameter: D = t_p / T

10 -2 10 -1 10 0 10 1

K/W ZthJC

10 ^-5 10 ^-4 10 ^-3 10 ^-2 10 ^-1 s 10 ⁰ t_p

single pulse 0.01

0.02 0.05 0.10 0.20 D = 0.50

(5)

Typ. output characteristics I_C = f(V_CE)

parameter: t_p = 80 µs, T_j = 125 °C

Typ. transfer characteristics I_C = f (V_GE)

parameter: t_P = 80 µs, V_CE = 20 V, T_j = 25 °C

Typ. saturation characteristics V_CE(sat)= f (V_GE)

parameter: T_j = 25 °C

Typ. saturation characteristics V_CE(sat) = f (V_GE)

parameter: T_j = 125 °C

(6)

Semiconductor Group 6 Dec-06-1995 Typ. gate charge

V_GE = ƒ(Q_Gate)

parameter: I_{C puls} = 1 A

0 4 8 12 16 20 24 nC 32

Q_Gate 0

2 4 6 8 10 12 14 16 V 20

VGE

800 V 400 V

Typ. capacitances C = f (V_CE)

parameter: V_GE = 0 V, f = 1 MHz

(7)

Package Outlines Dimensions in mm Weight: 8 g