^s.mi-Conau.cto'L ^Pioaueti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
NPN EPITAXIAL PLANAR TYPE
DESCRIPTION
2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications.
FEATURES
• High power gain: Gp
e^6.7dB
@V
CC= 13.5V, P
0= 1.4W,f = 500MHz
• TO-39 metal seeled package for high reliability.
• Emitter ballasted construction, gold metallization for good performances.
• Emitter electrode is connected electrically to the case.
APPLICATION
1 watt power amplifiers in UHF band mobile radio applications and driver amplifiers in general.
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
OUTLINE DRAWING Dimensions ,n mm
«!9-39
PIN :
(T) EMITTER ( C A S E )
® BASE 3) COLLECTOR
ABSOLUTE MAXIMUM RATINGS unless otherwise s
Symbol
VCBO VLBO VCEO
icTI
Tstg Rth-a Rth-c
Parameter Collector to base voitage Emitter to base voltage Collector to emitter voltage Collector current
•
Junct on temperature Storage temperature
Conditions
RB E=oo
Ta=25'C TC=J5'C
Junction to amtien;
Junction to case
Ratings 40 .1 18 0 6 C . 8 4 175 -55 to 175
187.5 3 7 . 5
Unit V V V A
w w
•c
•c
•c/w ' c / w
Mole Above parameturs are guaranteed independently.
ELECTRICAL CHARACTERISTICS ( unless other*™ s
Note. * Pulse test, Pw=15CVs diity=5%
Above parameters, ratings, limits and conditions are subject to cnange
Symbol Parameter
V(BR)Eao ' Emitter to base breakdown voltage
V(BH'CBO
V(BR;CEO
'cao UBO 1FE
• Po
''cTest cond'tions
|E = ) m A . lc =0 Collector to base breakdown voltage lc = 5rnA, 1^ — 0 Collector to emitter breakdown voltage (c = 50mA, RBE = °°
Col'ector cutoff current VcB = 2 5 V , IE= 0 Emitter cutoff current V£B = 3 V , l c = Q DC forward Current gain*
Output power Collector effic'ency
V c e ' l O V , I0 = 0.1A
Um,.S
Mm Typ
4
40 18
Ma.
100 100 ID
1 . 4 SO
50 1 .6 60
180 Una
V V V uA /a A
W
%
