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2N3866 BFR97 SGS-THOMSON

M © ^ © i[U © T i© iO © S

VHF-UHF POWER AMPLIFIER

DESCRIPTIO N

The 2N3866 and BFR97 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF-UHF class A. B. or C amplifier cir­

cuits and oscillator applications.

ABSOLUTE MAXIMUM RATINGS

Sym bol P aram eter Value Unit

V c E S Collector-emitter Voltage ( Vb e = 0) 55 V

Vc e o Collector-emitter Voltage (Ib =0) 30 V

Ve b o Emitter-base Voltage ( l c = 0) 3.5 V

l c Collector Current 0.5 A

P tot Total Power Dissipation at T case < 25 ;C 5 w

Ts t g t Tj Storage and Junction Temperature - 65 to 200 c

March 1989 1/3

(2)

2N3866-BFR97

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 35 ;C W

ELECTRICAL CHARACTERISTICS(Tamb = 25 TC unless otherwise specified)

Sym bol Param eter Test C ond ition s Min. Typ. Max. Unit

I C E O Collector Cutoff Current

(Ib =0) VCE = 28 V 20 pA

V ( B R ) C E S Collector-emitter Breakdown

Voltage ( Vb e = 0) lc = 0.1 mA 55 V

V c E O ( s u s ) * Collector-emitter Sustaining

Voltage ( Ib = 0) lc = 5 mA 30 V

V ( B R ) E B O Emitter-base Breakdown

Voltage ( l c = 0) l E =100 pA 3.5 V

V c E ( s a t ) * Collector-emitter Saturation

Voltage lc = 100 mA Ib = 20 mA 1 V

h F E * DC Current Gain lc = 50 mA VCE = 5 V

lc = 360 mA VCE = 5 V

10

5 200

fT Transition Frequency lc = 50 mA VCE = 15 V

f = 200 MHz 500 MHz

C c B O Collector-base Capacitance lE = 0 VCB = -2 8 V

f = 1 MHz 3 p F

P o * * Output Power Vcc = - 28 V P = 100 mW

f =400 MHz 1 W

1 * * Collector Efficiency Vcc = - 2 8 V Po =1 W

f =400 MHz 45 %

* Plused : pulse duration = 300 ms, duty cycle = 1 %.

** See test circuit.

Test Circuit for Power Output Measurement (f = 400 MHz).

2/3

SGS-THOMSON

(3)

2N3866-BFR97

High Frequency Current Drain.

RF Output Power.

Collector-base Capacitance.

Power Rating Chart.

r z7 SGS-THOMSON

^ 7 # ssafasom.iia'BsiBtes

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