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BAW100

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MAXIMUM RATINGS: (TA=25°C)

SYMBOL UNITS

Continuous Reverse Voltage VR 75 V

Peak Repetitive Reverse Voltage VRRM 85 V

Continuous Forward Current IF 250 mA

Peak Repetitive Forward Current IFRM 250 mA

Forward Surge Current, tp=1 µs IFSM 4000 mA

Forward Surge Current, tp=1 ms IFSM 2000 mA

Forward Surge Current, tp=1 s IFSM 1000 mA

Power Dissipation PD 350 mW

Operating and Storage

Junction Temperature TJ,Tstg -65 to +150 °C

Thermal Resistance ΘJA 357 °C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

IR VR=25V, TA=150°C 30 µA

IR VR=75V 1.0 µA

IR VR=75V, TA=150°C 50 µA

BVR IR=100µA 85 V

VF IF=1.0mA 715 mV

VF IF=10mA 855 mV

VF IF=50mA 1.00 V

VF IF=150mA 1.25 V

CT VR=0, f=1.0 MHz 2.0 pF

trr IF=IR=10mA, RL=100Ω, Rec. to 1.0mA 6.0 ns

BAW100 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED

SILICON SWITCHING DIODES

SOT-143 CASE

Central

Semiconductor Corp.

TM

R1 (20-February 2003) DESCRIPTION:

The CENTRAL SEMICONDUCTOR BAW100 is a Dual, Isolated High Speed Silicon Switching Diode in a SOT-143 surface mount package, designed for high speed switching applications.

MARKING CODE: CJSS

(2)

Central

Semiconductor Corp.

TM

SOT-143 CASE - MECHANICAL OUTLINE

BAW100 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED

SILICON SWITCHING DIODES

R1 (20-February 2003) LEAD CODE:

1) ANODE D1 2) ANODE D2 3) CATHODE D2

4) CATHODE D1 MARKING CODE: CJSS

Cytaty

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