N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
PRELIMINARY DATA
■
TYPICAL R
DS(on)= 1.47 Ω
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R
DS(on)per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS
■
SWITCH MODE POWER SUPPLIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
VDS Drain-source Volt age (VGS = 0) 400 V
VDGR Drain- gate Voltage (RGS= 20 kΩ) 400 V
VG S Gat e-source Voltage ±30 V
ID Drain Current (continuous) at Tc= 25oC 3.7 A
ID Drain Current (continuous) at Tc= 100 oC 2.3 A
•
TYPE VDSS RDS(on) ID
STD4NB40 400 V < 1.8 Ω 3.7 A
3 2 1
IPAK TO-251 (Suffix ”-1”)
1 3
DPAK TO-252
(Suffix ”T4”)
THERMAL DATA
Rt hj-ca se Rthj -am b
Rthc- si nk
Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
2.5 100 1.5 275
oC/ W oC/W
oC/ W
oC
AVALANCHE CHARACTERISTICS
Symb ol Parameter Max Valu e Uni t
IAR Avalanche Current, Repetitive or Not -Repet itive (pulse width limited by Tjmax,δ < 1%)
3.7 A
EAS Single Pulse Avalanche Energy
(starting Tj= 25 oC, ID= IAR, VDD= 50 V)
60 mJ
ELECTRICAL CHARACTERISTICS (T
case= 25
oC unless otherwise specified) OFF
Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it
V(BR)DSS Drain-source Breakdown Volt age
ID= 250µA VGS= 0 400 V
IDSS Zero G ate Voltage Drain Current (VGS= 0)
VDS= Max Rating
VDS= Max Rating Tc= 125oC
1 50
µAµA
IGSS Gate-body Leakage Current (VDS= 0)
VG S =± 30 V ±100 nA
ON ( ∗ )
Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it
VGS(th) Gate Threshold Voltage
VDS= VGS ID= 250 µA 3 4 5 V
RDS( on) St atic Drain-source On Resistance
VG S = 10V ID=2.3 A 1. 47 1.8 Ω
ID(o n) On St ate Drain Current VDS> ID(on)x RDS(on) max VG S= 10 V
4. 7 A
DYNAMIC
Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it
gfs(∗) Forward
Transconduct ance
VDS> ID(on)x RDS(on) max ID=2.3 A 1. 5 2.4 S
Ciss
Coss
Crss
Input Capacitance Output Capacit ance Reverse T ransfer Capacitance
VDS= 25 V f = 1 MHz VGS= 0 405 72
9
526 94 12
pF pF pF
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it
td(on)
tr
Turn-on Time Rise Time
VDD= 200 V ID= 2.3 A RG= 4.7 Ω VG S= 10 V (see test circuit, figure 3)
11 8
17 12
ns ns
Qg
Qgs
Qgd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 320 V ID=4. 7 A VG S= 10 V 14. 5 7 5.1
22 nC
nC nC
SWITCHING OFF
Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it
tr(Vof f)
tf
tc
Of f-voltage Rise Time Fall Time
Cross-over Time
VDD= 480 V ID= 4.7 A RG= 4.7 Ω VGS= 10 V (see test circuit, figure 5)
9 6 14
13 10 20
ns ns ns
SOURCE DRAIN DIODE
Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it
ISD
ISDM(•) Source-drain Current Source-drain Current (pulsed)
4.7 19
A A
VSD(∗) Forward On Voltage ISD = 4. 7 A VGS= 0 1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD= 4.7 A di/dt = 100 A/µs VDD = 100 V Tj= 150oC (see test circuit, figure 5)
300
1.6
10. 5
ns
µC A
(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
A C2 C A3
H
A1
D L
L2
B3 BB6 B5
TO-251 (IPAK) MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
==
L2 D
L4
13
== B
E ==B2 G2
A C2 C
H
A1DETAIL ”A”
A2
DETAIL ”A”
TO-252 (DPAK) MECHANICAL DATA
0068772-B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
