RLS-73
Diodes
Switching diode
RLS-73
!Applications High speed switching
!Features
1) Small surface mounting type. ( LLDS ) 2) High speed. (t
rr=1.2ns Typ.)
3) High reliability.
!Construction Silicon epitaxial planar
!
! !
!External dimensions (Units : mm)
−0.1+0.2
φ1.5Max.
φ1.4±0.1
0.4 0.4
3.4
CATHODE BAND (YELLOW)
ROHM : LLDS EIAJ : − JEDEC : LL-34
!
! !
!Absolute maximum ratings (Ta=25 °C)
Paramater Symbol Limits Unit
Peak reverse voltage VRM 90 V
DC reverse voltage VR 80 V
Peak forward current IFM 400 mA
Mean rectifying current IO 130 mA
Surge current (1s) Isurge 600 mA
Power dissipation P 300 mW
Junction temperature Tj 175 ˚C
Storage temperature Tstg −65∼+175 ˚C
! ! !
!Electrical characteristics (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF − − 1.2 V IF=100mA
Reverse current IR − − 0.5 µA VR=80V
Capacitance between terminals − − 2 pF VR=0.5V, f=1MHz
Reverse recovery time trr − − 4 ns VR=6V, IF=10mA, RL=50Ω
CT
RLS-73
Diodes
!
! !
!Electrical characteristic curves (Ta=25 °C)
0 Ta=125
˚C 75
˚C 25
˚C
−25
˚C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.2
0.5 1 2 5 10 20 50 100
FORWARD CURRENT : IF (mA)
FORWARD VOLTAGE : VF (V)
Fig. 1 Forward characteristics
REVERSE CURRENT : IR (nA)
REVERSE VOLTAGE : VR (V)
Fig. 2 Reverse characteristics
0 20 40 60 80 100 120 140
1n 10n 100n 1µ 10µ 0.1m 1m
Ta=−25˚C Ta=75˚C Ta=125˚C
00
10 20 30
f=1MHz 3.0
2.5
2.0
1.5
1.0
0.5
5 15 25
CAPACITANCE BETWEEN TERMINALS : CT (pF)
REVERSE VOLTAGE : VR (V)
Fig. 3 Capacitance between terminals characteristics
Fig. 4 Reverse recovery time characteristcs
00 5
4
3
2
1
4 8 12 16 20
VR =6V Irr = 1/10IR
REVERSE RECOVERY TIME : trr (ns)
FORWARD CURRENT : IF (mA)
0.01 0.1 1 10 100 1000
0.1 0.2 0.5 1 2 5 10
PULSE Single pulse
SURGE CURRENT : Isurge (A)
PULSE WIDTH : Tw (ms)
Fig.5 Surge current characteristics
Fig.6 Reverse recovery time (trr) measurement circuit PULSE GENERATOR
OUTPUT 50Ω SAMPLING
OSCILLOSCOPE 50Ω
0.01µF D.U.T.
5kΩ
