O ne..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960
2SD7S6 Epitaxial Planar NPN Silicon Translator Low rbb'Low Noise Amp.
• Feature*
1) Ultra-low noise. (Good noise re- sponse at low Rfl:): NF=-2.6dB (Typ.) (at f-IOHi, RB=-10n, V0«=6V.
lo*3mA)
2) Low base resistance: rbb'=4fi.
Low voltage noise :9n=»0.55nvVHz (at 10Hz. 10mA)
3) Complementary pair with 2SB737.
btolute Maximum Rattnga (Te»2Stt)
Epitaxial Planar NPN Silicon Transi
Dimension* (Unit: mm)
Symbol VCBO VCEO Vfeso
Ic Po T|
Tstg
Limit*
SO 40 . 5 300 250 ' 12S
-65~125
Unit V V V mA mW
x:
•e
28D7B6
JEDEC : TO-92 EIAJ : SC-43
(1) Emitter (2) Collector
(3)B8M
Electrical Characteristic* (Ta-2St)
Symbol
BVCEO
BVceo BVfeeO.
ICBO lEBO hrc VCE^.,
IT
rbv
NVt
Mln, 40 SO 5 - . - 120 - -
~
-•
TV?- - - . - - '- -
0.03 100 4
-
MM.
- - -
O.S 0.5 560 0.5 - 6ISO Untt V V V PA MA - V MHZ 0
mV
Condition*
Iq-lnnA lo-SOpA l»-«OyA ,
VOB -30V
VbB-4V Vce /ic-av/iomAlo/le-SOmA/SMA Vos -6V, IB— 10mA Vet -6V. lC-1mA. l>->
FLAT AMP (Qv-80dB)
\fce -10V, l0-1mA Hg-100kQ
Item HFI
Q 120-270
H*
180-3SO
•- ' -3 270-8W
