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BUZ10A T SGS-THOMSON

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

TYPE V DSS ^ D S (o n ) *D

BUZ10A 50 V 0.12 0 17 A

• HIGH SPEED SWITCHING

• LOW Rds (0n)

• EASY DRIVE FOR COST EFFECTIVE APPLICATIONS.

INDUSTRIAL APPLICATIONS:

• AUTOMOTIVE POWER ACTUATOR DRIVES

• MOTOR CONTROLS

• DC-DC CONVERTERS

N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching circuits in applications such as power actuator driving, motor drives including brushless motors, hydraulic actuators and many other uses in automotive and automatic guided ve­

hicle applications. It is also used in DC/DC conver­

ters and uninterruptible power supplies.

TO-220

INTERNAL SCHEMATIC DIAGRAM

Qo

G O -

ABSOLUTE MAXIMUM RATINGS

V D S Drain-source voltage (VGS = 0) 50 V

V D G R Drain-gate voltage (RGS = 20 KO) 50 V

V G S Gate-source voltage ± 20 V

d Drain current (continuous) Tc = 30°C 17 A

'd m Drain current (pulsed) 65 A

Ptot Total dissipation at Tc < 2 5 °C 75 W

Ttg Storage temperature - 5 5 to 150 °C

Ti Max. operating junction temperature 150 °C

DIN humidity category (DIN 40040) E

IEC climatic category (DIN IEC 68-1) 55/150/56

June 1988 1/4

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BUZ10A

THERMAL DATA

Rthj. case Thermal resistance junction-case max 1.67 °C/W

Rthj . amb Thermal resistance junction-ambient max 75 °C/W

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)

Param eters Test C onditions Min. Typ. Max. Unit

OFF

v(br)dss Drain-source breakdown voltage

Id- 1 mA VGs = 0 50 V

lDSS Zero gate voltage drain current (VGS = 0)

VDS= Max Rating

VDS= Max Rating Tj = 125°C

250 1000

-J= >>

lGss Gate-body leakage current (VDS = 0)

VGS = ± 20 V ±100 nA

ON

VGS (th) Gate threshold

voltage Vd s- ^gs Id= 1 2.1 4 V

RDs (on) Static drain-source on resistance

VGS= 1 0 V lD= 10 A 0.12 O

DYNAMIC g(s Forward

transconductance

VqS= 25 V lD= 10 A 3.0 mho

Cjss Input capacitance D0ss Output capacitance Crss Reverse transfer

capacitance

VDS = 25 V f = 1 MHz VGS = 0

2000 800 300

PF PF PF

SWITCHING

td (0n) Turn-on time tr Rise time

td (off) Turn-off delay time tf Fall time

VDD= 30 V lD= 3.0 A Rq3 = 50 fi VGs = 10 V

45 90 170 140

ns ns ns ns

2/4 SGS-THOMSON

^ 7 # . MOElSOilUICTEIOliSlEi

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BUZ10A

ELECTRICAL CHARACTERISTICS (Continued)

Param eters Test C onditions Min. Typ. Max. Unit

SOURCE DRAIN DIODE

's o Source-drain current Tc = 25°C 17 A

'sD M Source-drain current

(pulsed)

65 A

V SD Forward on voltage 's d= 34 A > o CO II O

1.5 V

trr Reverse recovery time

150 ns

Qrr Reverse recovered charge

I s o - 17 A di/dt = 100A/^s 1.0 y.C

Thermal impedance Derating curve

Output characteristics Transfer characteristics Transconductance

CO so oS <<<<

u

— Vk=7V

If)

jj

LV

VL___ I__ I__ l__ __ i_I___I____

0 1 2 3 4 VK (V)

GC-0SS3

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BUZ10A

Static drain-source on resistance

GC-0S29 R0Slon)

(A )

025

0 2 0

015

010

005

0 10 20 30 40 50 fe(A)

Maximum drain current vs temperature

0 50 100 150 Tc fC )

Gate charge vs gate-source voltage

VgsIV)

16

12

s

d=25.5A

Vos =10V

t o v

/ /

/7

/

0 4 8 12 16 2 ,lnC

Capacitance variation Gate threshold voltage vs temperature

Drain-source on resistance vs temperature

Source-drain diode forward characteristics

4/4

57

.SGS-THOMSON

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