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c3\£. , LJnc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

2N3055C

N-P-N SILICON POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS (Tcai. = 25 °C unless otherwise specified)

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

Parameter 'CEV Collector cutoff

current (Vnr - -1.5V

'CEO Collector cutoff current (IB-0) ILUO Emitter cutoff

current (lc - 0) VCEV (sus)* Collector-emitter

sustaining voltage (V11C- -1.5V) VCEO<SU»)* Collector-emitter

sustaining voltage OB-O)

VCE (sal)* Collector-emitter saturation voltage

VDE* Base-emitter voltage

Test conditions

VCE " 80V

VCE-BOV Tca9.-150"C VCE - 3°v

VE B= 7 V

lc '= 100mA

lc - 200mA

lc - 4 A IB - 400mA

lc - 4 A Vce = 4 V

Mln. Typ. Max

5 30 0.7

1

70 60

1 3 1.5

Unit

niA mA mA mA mA

mA

V V V

V V V ABSOLUTE MAXIMUM RATINGS

Vono VCEV VCER

V|,i u VLDQ

|_

ID

P,ot

T5lq

V

Collector-base voltage (IE = 0]

Collector-emitter voltage (VBE- -1.5V) Collector-emitter voltage (RBE*s 100 11) Collnclor omillnr vollficjn (IM -

Emitter-base voltage (lc = 0) Collector current

Ea-je current

0)

Total power dissipation at TcaM < 25°C Storage temperature

Junction temperature

80V 70V

r,ov 7V 15A

7A 115W -65 to200"C

200 "C

ALL JhDEC T O 3 THI: COLLECTOR

0 573 • MAX

(O ( J O) 1 OM MAX

\^S \

o in r-M»x torn INDS

DIMENSIONS AND NOTES ARE APPLICABLE IS IN ELECTRICAL CONTACT V,

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0,450 , OJJO "*|

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I-«A5I — ' MfAIUI

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fMHD IMINT

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kTUM fOINT

DIMENSIONS ARE IN INCHES

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions diseovered in its use. "

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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