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^ 7 # [^DeiQIILIlOTiOlDtgi BUW22A/22AP

HIGH VOLTAGE POWER SWITCH

DESCRIPTIO N

The BUW22, BUW22A are silicon multiepitaxial me­

sa PNP transistor in Jedec TO-3 metal case, parti- culary intended for switching applications.

The BUW22P, BUW22AP are mounted in TO-220 plastic package.

INTERNAL SCH E M A TIC DIAGRAM

S

B

O -

PNP

S- 6896

6 e

ABSOLUTE M AXIMUM RATINGS

Symbol P ar a m e te r V alu e

B U W 2 2/ P BU W22A/AP Unit

VcES Collector-emitter Voltage ( V Be= 0 ) - 400 - 450 V

VcEO Collector-emitter Voltage (Ib = 0 ) - 350 - 4 0 0 V

Ve b o Emitter-base Voltage ( l c = 0) - 5 - 7 V

lc Collector Current - 6 A

IcM Collector Peak Current (tp < 10 ms) - 8 A

b Base Current - 2 A

Ibm Base Peak Current (tp < 10 ms) - 4 A

T O - 3 T O - 2 2 0

P t ot Total Power Dissipation at T caSe £ 25 °C 75 60 W

T stg Storage Temperature - 65 to 175 - 65 to 150 °C

T,

Junction Temperature 175 150 °C

November 1988 1/5

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THERMAL DATA

Rth j-case Thermal Resistance Junction-case max 2 °C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

Symbol P ar am e te r Te s t Conditions Min. Typ. Max. Unit

Ic e s Collector Cutoff Current Vce= Rated Vces - 1 mA

(Vbe = 0) Tease = 125 °C

Vce= Rated Vces - 5 mA

Iebo Collector Cutoff Current

dc = 0 ) Veb= Rated Vebo - 1 mA

VcEO(sus)* Collector-emitter Sustaining l0 =- 100 mA

Voltage (Ib= 0) for B U W 2 2/ P - 3 5 0 V

for BU W22A/AP - 4 0 0 V

VcE(sat)* Base-emitter Saturation Voltage

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- 1.5 V VBE(sat)* Base-emitter Saturation

Voltage l c = - 2 . 5 A l B =- 1 A - 1.6 V

hFE* DC Current Gain lc = — 0.5 A Vce= - 5 V 12

U/b Second Breakdown Vce= — 30 V

Collector Current for BU W22/A - 2.5 A

for B U W2 2P /A P - 2 A

ton Turn-on Time Resistive Load 0.4 0.8 ps

ts Storage Time VCc = - 250 V

lc = - 2 . 5 A IB 1 = — IB 2 = — 0.5 A

0.6 1.5 gs

tt Fall Time 0.3 0.7 g s

Pulsed : pulse duration = 300 us, duty cycle = 1.5 %.

Safe Operating Areas. Safe Operating Areas.

(BUW22AP - BUW22P). (BUW22 - BUW22A).

SGS-THOMSON

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Transient Thermal Response. DC Current Gain.

Collector-emitter Saturation Voltage.

Base-emitter Saturation Voltage.

SGS-THOMSON

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Switching Times Resistive Load (test circuit fig. 1).

Turn-off Switching Times Inductive Load (test circuit fig. 2).

Capacitance.

Switching Time Percentage Variation vs. Tease-

G -SS31 RESISTIV

H I

! c = 3 A L DAD

y

«s

0 25 50 75 Tc«»*C C )

Switching Times Percentage Variation vs. Tease-

G - S5 33

Reserve Biased Safe Operating Area.

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TEST CIRC UITS.

Figure 1.

Figure 2.

- 6 V 1-5 mH U A

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7 SCS-THOMSON

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