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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.

CHARACTERISTICS T

C

= 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV CBO I C = 50 mA 48 50 --- V

BV CEO I C = 20 mA 25 30 --- V

BV EBO I E = 5 mA 3.5 4.0 --- V

I CBO V CB = 24 V 1.0 mA

h FE V CE = 5.0 V I C = 100 mA 20 100 ---

C OB V CB = 24 V f = 1.0 MHz 25 pF

P G

V CC = 24 V I CQ = 2 X 75 mA f = 960 MHz

P OUT = 30 W 7.5 dB

NPN SILICON RF POWER TRANSISTOR

CBSL30B

DESCRIPTION:

The ASI CBSL30B is Designed for Class AB, Cellular Base Station Applications up to 960 MHz.

FEATURES:

Internal Input Matching Network

P G = 7.5 dB at 30 W/960 MHz

Omnigold™ Metalization System

MAXIMUM RATINGS

I C 5.0 A

V CBO 48 V

V CES 45 V

V EBO 4.0 V

P DISS 43 W @ T C = 25 °C T J -65 °C to +200 °C

T STG -65 °C to +150 °C θθθθ JC 3.0 °C/W

PACKAGE STYLE .250 BAL FLG

ORDER CODE: ASI10583

M IN IM U M inches / m m

.055 / 1 .40

.243 / 6 .17 .630 / 1 6.00 B

C D E F G A

M A X IM U M

.670 / 1 7.01 .255 / 6 .48 inches / m m

.125 / 3 .18

H D IM

K L I J

.315 / 8 .00 .002 / 0 .05

.075 1.91

.327 / 8 .31 .006 / 0 .15

.095 / 2 .41

N M

.245 / 6 .22 .257 / 6 .53

.060 / 1 .52

.092 / 2 .34

.055 / 1 .40 .065 / 1 .65

.190 / 4 .83 K .020 x 45°

J F E

D C

H I

G

L M

.050 x 45°

N B A

Ø .130 N O M .

.065 / 1 .65

.555 / 1 4.10 .739 / 1 8.77

.565 / 1 4.35 .750 / 1 9.05

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