SKM100GB124

Symbol Conditions ¹⁾ Units V_CES

V_CGR I_C I_CM V_GES P_tot T_j, (T_stg) V_isol humidity climate

R_GE = 20 kΩ

T_case = 25/85 °C

T_case = 25/85 °C; t_p = 1 ms

per IGBT, T_case = 25 °C

AC, 1 min.

DIN 40040 DIN IEC 68 T.1

1200 1200 150 / 100 300 / 200

± 20 700 –40 ... + 150 (125)

2 500 Class F 40/125/56

V V A A V W

°C V

Inverse Diode I_F = –I_C I_FM = –I_CM I_FSM I²t

T_case = 25/80 °C

T_case = 25/80 °C; t_p = 1 ms t_p = 10 ms; sin.; T_j = 150 °C t_p = 10 ms; T_j = 150 °C

95 / 65 300 / 200

720 2600

A A A A²s

Characteristics

Symbol Conditions ¹⁾ min. typ. max. Units

V_(BR)CES V_GE(th) I_CES

I_GES V_CEsat V_CEsat g_fs

V_GE = 0, I_C = 4 mA V_GE = V_CE, I_C = 2 mA V_GE = 0 T_j = 25 °C V_CE = V_CES T_j = 125 °C V_GE = 20 V, V_CE = 0 I_C = 75 A V_GE = 15 V;

I_C = 100 A T_j = 25 (125) °C V_CE = 20 V, I_C = 75 A

≥ ^VCES

4,5 – – – – – 31

– 5,5 0,1 6 – 2,1(2,4) 2,5(3,0)

–

– 6,5 1,5 – 300 2,45(2,85)

– –

V V mA mA nA V V S CCHC

C_ies C_oes C_res L_CE

per IGBT V_GE = 0 V_CE = 25 V f = 1 MHz

– – – – –

– 5 720 380 –

350 6,6 900 500 30

pF nF pF pF nH t_d(on)

t_r t_d(off) t_f E_on ⁵⁾ E_off ⁵⁾

V_CC = 600 V

V_GE = –15 V / +15 V³⁾ I_C = 75 A, ind. load R_Gon = R_Goff = 10 Ω

T_j = 125 °C

– – – – – –

80 45 430

55 11 9

– – – – – –

ns ns ns ns mWs mWs Inverse Diode ⁸⁾

V_F = V_EC V_F = V_EC V_TO r_t I_RRM Q_rr

I_F = 75 A V_GE = 0 V;

I_F = 100 A T_j = 25 (125) °C T_j = 125 °C

T_j = 125 °C

I_F = 75 A; T_j = 125 °C²⁾ I_F = 75 A; T_j = 125 °C²⁾

– – – – – –

2,0(1,8) 2,25(2,05)

1,1 – 42 9,1

2,5 – 1,2

15 – –

V V V mΩ

A µC Thermal characteristics

R_thjc R_thjc R_thch

per IGBT per diode per module

– – –

– – –

0,18 0,50 0,05

°C/W

°C/W

°C/W

Low Loss IGBT Modules SKM 100 GB 124 D

Features

• MOS input (voltage controlled)

• N channel, homogeneous Silicon structure (NPT- Non punch- through IGBT)

• Low loss high density chip

• Low tail current

• High short circuit capability, self limiting to 6 * Icnom

• Latch-up free

• Fast & soft inverse CAL diodes ⁸⁾

• Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould

• Large clearance (10 mm) and creepage distances (20 mm) Typical Applications:

→ B 6 ^– 121

• Switching (not for linear use)

1)T_case = 25 °C, unless otherwise specified

2)I_F = – I_C, V_R = 600 V, –di_F/dt = 800 A/µs, V_GE = 0 V

3)Use V_GEoff = –5... –15 V

5)See fig. 2 + 3; R_Goff = 10 Ω

8)CAL = Controlled Axial Lifetime Technology

Cases and mech. data

→ B 6 – 122 GB

SEMITRANS 2

SKM 100 GB 124 D

M100G124.X LS -6

0 2 4 6 8 10 12

0 200 400 600 800 1000 1200 1400

V_CE V

I_CSC/I_C

allowed numbers of short circuits: <1000

time between short circuits: >1s

di/dt=300 A/µs 900 A/µs 1500 A/µs

M100G124.X LS -5

0 0,5 1 1,5 2 2,5

0 200 400 600 800 1000 1200 1400

V_CE V

I_Cpuls/I_C

M100G124.X LS -3

0 5 10 15 20 25 30

0 20 40 60 80

R_G Ω

E mWs

E_on

E_off

M100G124.X LS -4

0,1 1 10 100 1000

1 10 100 1000 10000

V_CE V

I_C

A t_p=21µs

100µs

1ms

10ms

M100G124.X LS -1

0 100 200 300 400 500 600 700 800

0 20 40 60 80 100 120 140 160

T_C °C

P_tot W

M100G124.X LS -2

0 5 10 15 20 25 30 35

0 50 100 150 200

I_C A

E mWs

E_on

Eoff

Fig. 3 Turn-on /-off energy = f (RG) Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) Fig. 1 Rated power dissipation P_tot = f (T_C) Fig. 2 Turn-on /-off energy = f (I_C)

Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit IC = f (VCE) T_j = 125 °C V_CE = 600 V V_GE = + 15 V R_G = 10 Ω

1 pulse T_C = 25 °C T_j≤ ^{150 °C} T_j = 125 °C

V_CE = 600 V V_GE = + 15 V I_C =75 A

T_j≤ ^{150 °C} V_GE = ± 15 V t_sc≤ ^{10 µs} L < 25 nH I_C = 75 A T_j≤ ^{150 °C}

V_GE = 15 V R_Goff = 10 Ω I_C = 75 A

Not for linear use

M100G124.X LS -12

0 50 100 150

0 2 4 6 8 10 12 14

V_GE V

I_C A

M100G124.X LS -10

0 50 100 150

0 1 2 3 4 5

V_CE V

IC A

17V 15V 13V 11V 9V 7V

M100G124.X LS -9

0 50 100 150

0 1 2 3 4 5

V_CE V

I_C

A 17V

15V 13V 11V 9V 7V

0 20 40 60 80 100 120 140

0 20 40 60 80 100 120 140 160

T_C °C

I_C

Pcond(t) = VCEsat(t) · IC(t)

V_CEsat(t) = V_CE(TO)(Tj) + r_CE(Tj) · I_C(t)

V_CE(TO)(Tj)≤ 1,3 + 0,0005 (T_j –25) [V]

typ.: r_CE(Tj) = 0,0107 + 0,000033 (T_j –25) [Ω^] max.: r_CE(Tj) = 0,0153 + 0,000047 (T_j –25) [Ω^] valid for V_GE = + 15 [V]; I_C > 0,3 I_Cnom

Fig. 9 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 10 Typ. output characteristic, tp = 80 µs; 125 °C Fig. 8 Rated current vs. temperature I_C = f (T_C)

Fig. 11 Saturation characteristic (IGBT)

Calculation elements and equations Fig. 12 Typ. transfer characteristic, t_p = 80 µs; V_CE = 20 V V_GE≥ ^15V

+2–1

SKM 100 GB 124 D

M100G124.X LS -18

0 1 2 3 4 5

0 20 40 60 80 100 120

I_F A

E_offD mJ

32 Ω 15 Ω

80 Ω 9 Ω R_G= 5 Ω

M100G124.X LS -17

0 20 40 60 80 100

0 1 2 3

V_F V

I_F

A T_j=125°C, typ.

T_j=25°C, typ.

T_j=125°C, max.

T_j=25°C, max.

M100G124.X LS -16

10 100 1000 10000

0 20 40 60 80

R_G Ω

t ns

t_doff

tdon t_r

t_f

M100G124.X LS -15

10 100 1000 10000

0 50 100 150 200

I_C A

t ns

t_doff

t_don t_r t_f

M100G124.X LS -14

0,1 1 10 100

0 10 20 30

V_CE V

C nF

C_ies

Coes

C_res

M100G124.X LS -13

0 2 4 6 8 10 12 14 16 18 20

0 100 200 300 400 500 600

Q_Gate nC

V_GE V

600V

800V

Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.V_CE

V_GE = 0 V f = 1 MHz

Fig. 15 Typ. switching times vs. I_C Fig. 16 Typ. switching times vs. gate resistor R_G

Fig. 17 Typ. CAL diode forward characteristic Fig. 18 Diode turn-off energy dissipation per pulse I_Cpuls = 75 A

Tj = 125 °C V_CE = 300 V VGE = ± 15 V R_Gon = 10 Ω R_Goff = 10 Ω induct. load

Tj = 125 °C V_CE = 300 V VGE = ± 15 V I_C = 75 A induct. load

V_CC = 600 V Tj = 125 °C V_GE = ± 15 V

M 10 0G1 24 .X LS -2 4

0 2 4 6 8 10 12 14 16

0 1000 2000 3000 4000

di_F/dt A/µs

Qrr µC

I_F=

75 A

55 A

40 A

20 A 32 Ω 15 Ω

80 Ω

9 Ω

RG= 5 Ω

100 A

M100G124.X LS -23

0 20 40 60 80 100 120 140

0 1000 2000 3000 4000

di_F/dt A/µs

I_RR A

32 Ω 15 Ω

80 Ω

9 Ω RG=

5 Ω

M100G124.X LS -22

0 20 40 60 80 100 120 140

0 20 40 60 80 100 120

IF A

I_RR A

32 Ω 15 Ω

80 Ω 9 Ω R_G=

5 Ω 0,0001

0,001 0,01 0,1

0,00001 0,0001 0,001 0,01 0,1 1

t_p s

Z_thJC K/W

D=0,50 0,20 0,10 0,05 0,02 0,01 single pulse

0,0001 0,001 0,01 0,1

0,00001 0,0001 0,001 0,01 0,1 1 s Z_thJC

K/W

D=0,5 0,2 0,1 0,05 0,02 0,01

single pulse

tp

Fig. 19 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp / tc = tp · f

Fig. 20 Transient thermal impedance of inverse CAL diodes

Fig. 22 Typ. CAL diode peak reverse recovery current I_RR = f (I_F; R_G)

Fig. 23 Typ. CAL diode peak reverse recovery current I_RR = f (di/dt)

Fig. 24 Typ. CAL diode recovered charge Typical Applications

include

Switched mode power supplies DC servo and robot drives Inverters

DC choppers

AC motor speed control

UPS Uninterruptable power supplies General power switching applications

VCC = 600 V T_j = 125 °C VGE = ± 15 V V_CC = 600 V

Tj = 125 °C V_GE = ± 15 V

V_CC = 600 V Tj = 125 °C V_GE = ± 15 V IF = 75 A

SKM 100 GB 124 D

SEMITRANS 2 Case D 61 UL Recognized File no. E 63 532

SKM 100 GB 124 D

Dimensions in mm

Case outline and circuit diagram

Mechanical Data

Symbol Conditions Values Units

min. typ. max.

M₁

M₂

a w

to heatsink, SI Units (M6) to heatsink, US Units

for terminals, SI Units (M5) for terminals, US Units

3 27 2,5 22 – –

– – – – – –

5 44

5 44 5x9,81

160

Nm lb.in.

Nm lb.in.

m/s² g

This is an electrostatic discharge sensitive device (ESDS).

Please observe the international standard IEC 747-1, Chapter IX.

Eight devices are supplied in one SEMIBOX A without mounting hard- ware, which can be ordered separa- tely under Ident No. 33321100 (for 10 SEMITRANS 2)

Larger packing units of 20 or 42 pie- ces are used if suitable

Accessories → ^{B 6 – 4} SEMIBOX → ^{C – 1.}